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Renesas 71V67903S75BQGI
- Part No.:
- 71V67903S75BQGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67903S75BQGI.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,404
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Product details
Overview
71V67903S75BQGI from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time at 117MHz, single-cycle deselect, and linear/interleaved burst mode controlled by LBO. It operates across industrial temperature (–40°C to +85°C) and supports byte-write and global-write control in high-speed networking and packet buffering applications.
For engineers reviewing the 71V67903S75BQGI datasheet, 71V67903S75BQGI pinout, 71V67903S75BQGI application, or 71V67903S75BQGI equivalent, key selection criteria include burst address sequencing (LBO), self-timed write timing, ZZ-controlled sleep mode, and TQFP-100 package compatibility with JEDEC-standard layout.
Technical Context
The 71V67903S75BQGI implements a synchronous, clock-driven architecture with registered address, control, and data inputs, and a flow-through (unregistered) output path. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO, supporting four-word bursts per address cycle.
Write operations are self-timed and configurable via GW (global write), BWE (byte write enable), and BW1–BW2 (two active byte enables for 18-bit mode); BW3/BW4 are not applicable per datasheet note. The device uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies and enters low-power sleep mode when ZZ is driven HIGH.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9Mbit), configured as 18-bit wide data bus with A0–A18 addressing |
| Access Time / Max Frequency | 7.5ns access time, enabling 117MHz system clock operation with tCYC = 8.5ns |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O), enabling mixed-voltage interface compatibility |
| Burst Mode Control | LBO input selects linear (LBO=LOW) or interleaved (LBO=HIGH) 4-word burst sequence; static during operation |
| Power Management | ZZ input enables full sleep mode with IZZ ≤ 70mA (industrial), reducing standby current vs. ISB2 (155mA) |
| Operating Temperature | Industrial range –40°C to +85°C, validated for embedded telecom and industrial control environments |
| Package | JEDEC-standard 100-pin TQFP (14mm × 20mm), lead-free and RoHS-compliant |
Pinout & Package
71V67903S75BQGI is packaged in a 100-pin thin quad flatpack (TQFP), JEDEC MO-137AC, 14mm × 20mm body, 0.5mm pitch. Pin 1 is marked by corner notch; pin numbering follows standard counter-clockwise convention from top-left.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge with ADSP/ADSC assertion; A0–A17 used for 512K×18 mode |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level synchronous chip select: CE active LOW, CS0 active HIGH, CS1 active LOW - all required for device enable |
| GW, BWE, BW1–BW2 | Write Controls | GW enables full 18-bit write; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 |
| CLK, ADV, ADSP, ADSC | Burst Timing Inputs | CLK drives all registers; ADV advances burst counter; ADSP (processor) and ADSC (cache) load address register synchronously |
| LBO, ZZ, OE | Mode & Output Control | LBO sets burst order (static); ZZ enables sleep mode (asynchronous HIGH); OE enables flow-through outputs (asynchronous LOW) |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional data bus with parity pins I/OP1/I/OP2; registered input path, unregistered (flow-through) output path |
| VDD, VDDQ, VSS | Power Supplies | VDD powers core logic; VDDQ powers I/O buffers; separate grounds ensure noise isolation between domains |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay, enabling immediate data availability after tCD (7.5ns), critical for latency-sensitive packet forwarding |
| Single-cycle deselect | Device transitions to high-Z output state within one clock cycle of chip disable, preventing bus contention in multi-SRAM systems |
| Self-timed write cycle | Internal timing logic eliminates external write pulse generation; write completion determined autonomously after GW/BWx sampling |
| Linear/interleaved burst mode | LBO-selectable burst order matches processor cache line layouts (e.g., linear for sequential DMA, interleaved for cache-aligned fetches) |
| Low-power sleep mode | ZZ-driven sleep reduces ICC to ≤70mA (industrial), enabling power-gating during idle periods without data loss |
Applications
| Packet Buffering in Switch ASICs | Cache-Coherent Memory for DSP Cores |
|---|---|
Use Scenario: High-speed Ethernet switch fabric buffers ingress/egress packets at line rate using parallel SRAM banks. IC Role / Device Role / Timing Role: 71V67903S75BQGI serves as a 18-bit-wide, burst-accessed packet descriptor memory with deterministic 7.5ns read latency. Use Value: Flow-through outputs and single-cycle deselect prevent pipeline stalls during rapid buffer switching between ports. | Use Scenario: Off-chip L2 cache extension for TI C6000 or Analog Devices SHARC DSPs requiring low-latency, burst-capable memory. IC Role / Device Role / Timing Role: 71V67903S75BQGI acts as synchronous cache tag/data RAM, interfacing directly with DSP's EMIF using ADSP/ADV protocol. Use Value: LBO-configurable burst order aligns with DSP's cache line fetch pattern, minimizing wait states during instruction prefetch. |
| Industrial PLC Data Logging Buffer | Medical Imaging Frame Store Interface |
Use Scenario: Real-time data acquisition module in programmable logic controllers stores sensor samples before SD-card transfer. IC Role / Device Role / Timing Role: 71V67903S75BQGI functions as a dual-port accessible FIFO buffer, written by ADC controller and read by ARM host via burst reads. Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode support reliable operation in uncooled enclosures with intermittent activity. | Use Scenario: Ultrasound or MRI front-end digitizers require high-bandwidth frame storage for real-time beamforming processing. IC Role / Device Role / Timing Role: 71V67903S75BQGI provides 18-bit pixel data storage with 117MHz burst throughput, synchronized to FPGA video timing engine. Use Value: 7.5ns access time and flow-through outputs meet sub-10ns pixel clock jitter budgets in 10-bit+ imaging pipelines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1315KV18-75BZXI | Same 512K×18 organization, 75MHz max (13.3ns), QDR-II+ architecture with separate read/write clocks | Requires dual-clock routing and QDR protocol stack; not drop-in compatible for burst-sequential interfaces | Select only if migrating to QDR-based memory hierarchy with higher aggregate bandwidth needs |
| AS7C35128PFS-75BIN | 512K×18, 7.5ns, but asynchronous SRAM with no burst or clock interface; TTL-compatible I/O | Lacks ADV/ADSP/ADSC timing controls and burst capability; incompatible with synchronous bus protocols | Use only in legacy designs where clockless control and simple address strobe timing are required |
Compared with CY7C1315KV18-75BZXI and AS7C35128PFS-75BIN, the 71V67903S75BQGI uniquely delivers synchronous burst operation with flow-through latency and industrial temperature support in a JEDEC TQFP package - essential for deterministic real-time buffering where clock-aligned access and minimal output delay are mandatory.
Availability
71V67903S75BQGI is available at Aetrix Electronics and suitable for packet buffering, DSP cache extension, industrial data logging, and medical imaging frame store applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade reliability.
Supply support for 71V67903S75BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for communications, computing, and industrial markets.
The 71V67903S75BQGI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable data buffering in network infrastructure, DSP subsystems, and real-time control systems.
FAQ
What is the maximum operating frequency supported by the 71V67903S75BQGI?
The 71V67903S75BQGI supports up to 117MHz clock frequency, corresponding to a minimum clock cycle time (tCYC) of 8.5ns and guaranteed 7.5ns access time. This specification applies under commercial and industrial temperature ranges with VDD and VDDQ at 3.3V ±5%. Exceeding 117MHz violates AC timing limits and may cause data corruption.
Does the 71V67903S75BQGI support both linear and interleaved burst modes?
Yes, the 71V67903S75BQGI supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear sequence, LBO = HIGH selects interleaved sequence. The datasheet confirms this behavior is valid for the 71V67903S75BQGI variant, and LBO must remain static during operation to avoid undefined burst counter behavior.
How many byte write enable signals are functional on the 71V67903S75BQGI?
The 71V67903S75BQGI implements only BW1 and BW2 for byte write control, as explicitly stated in the datasheet note: "BW3 and BW4 are not applicable for the IDT71V67903." BW1 controls I/O0–I/O8 and I/OP1; BW2 controls I/O9–I/O17 and I/OP2 - fully covering the 18-bit + 2-bit parity configuration.
What is the role of the ZZ pin on the 71V67903S75BQGI?
The ZZ pin on the 71V67903S75BQGI is an asynchronous sleep mode input: driving ZZ HIGH gates the internal clock and reduces supply current to ≤70mA (industrial grade), while retaining data. ZZ is internally pulled to VSS if left unconnected, so active pull-up is required to enter sleep mode. Recovery requires tZZR ≥ 100ns after ZZ returns LOW.
Is the 71V67903S75BQGI pin-compatible with the 71V67703 series?
No, the 71V67903S75BQGI is not pin-compatible with the 71V67703 series. While both share the same 100-pin TQFP package footprint, pin functions differ significantly: the 71V67903S75BQGI disables BW3/BW4 and reassigns pins (e.g., pins 4–5 are NC in 71V67903 but BW4/BW3 in 71V67703), and address depth differs (A0–A18 vs. A0–A17), making direct PCB replacement impossible without layout revision.
71V67903S75BQGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67903S75BQGI FAQ
1.How can I place an order for 71V67903S75BQGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67903S75BQGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67903S75BQGI reliable?
The price and inventory of 71V67903S75BQGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S75BQGI is usually 5 days.
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Once your 71V67903S75BQGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67903S75BQGI?
For technical support, including 71V67903S75BQGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S75BQGI requirements.
6.How does Aetrix verify that 71V67903S75BQGI is sourced from the original manufacturer or authorized distributors?
All 71V67903S75BQGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S75BQGI meets industry standards.
7.What is the process for return or replacement of 71V67903S75BQGI?
All 71V67903S75BQGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S75BQGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67903S75BQGI part is unused and in its original packaging.
Return procedure for 71V67903S75BQGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67903S75BQGI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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