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Renesas 71V67903S75BQI
- Part No.:
- 71V67903S75BQI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67903S75BQI.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,007
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Product details
Overview
71V67903S75BQI from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time at 117MHz, and single-cycle deselect. It supports linear/interleaved burst modes via LBO pin, self-timed write with global/byte write control, and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking buffers and real-time DSP memory subsystems.
For engineers reviewing the 71V67903S75BQI datasheet, 71V67903S75BQI pinout, 71V67903S75BQI application, or 71V67903S75BQI equivalent, key selection criteria include burst address sequencing behavior, ZZ-controlled sleep mode current (≤70mA), 100-pin TQFP package compatibility, and absence of BW3/BW4 pins per datasheet note.
Technical Context
The 71V67903S75BQI implements a synchronous, clock-driven architecture with registered address and data inputs, but flow-through (unregistered) outputs-enabling zero-latency read data delivery after tCD. Its internal burst counter advances on ADV=LOW and selects sequence order (linear vs. interleaved) via static LBO pin configuration.
Write operation supports two distinct modes: global write (GW active) writes all 18-bit words simultaneously, while byte-write mode uses BWE and BW1–BW2 (BW3/BW4 not applicable per datasheet) for selective 9-bit word updates. Chip enable is managed synchronously via CE, CS0 (active HIGH), and CS1 (active LOW).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9Mbit); supports 256K × 36-bit via pin-compatible variant 71V67703 |
| Access Time / Max Clock | 7.5ns / 117MHz - enables tight timing closure in 100+ MHz bus systems |
| Core & I/O Voltage | 3.3V ±5% VDD (core), 3.3V ±5% VDDQ (I/O) - requires dual 3.3V rail design |
| Burst Mode Control | LBO pin selects linear (LBO=LOW) or interleaved (LBO=HIGH) 4-word burst sequence |
| Power-Down Current | IZZ ≤ 70mA (industrial temp) when ZZ=HIGH - reduces standby power in idle cycles |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded and telecom equipment |
| Package | JEDEC-standard 100-pin TQFP (14mm × 20mm); also available in 119-ball BGA and 165-fBGA |
Pinout & Package
71V67903S75BQI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, with 0.5mm pitch. Pinout conforms to PKG100 configuration for 512K × 18 organization (per datasheet drawing 5309 drw 02b), where A18 is active and BW3/BW4 are NC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous 19-bit address bus; A18 used in 512K×18 mode (not present in 256K×36 variant) |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input decode: CE=LOW, CS0=HIGH, CS1=LOW enables device; allows multi-chip addressing |
| GW, BWE, BW1–BW2 | Write Controls | GW writes all 18 bits; BWE enables BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances burst counter; ADSP (gated by CE) and ADSC load address register on falling edge |
| LBO, ZZ | Mode Configuration | LBO=LOW → linear burst; ZZ=HIGH → full sleep mode (CLK gated, I/O high-Z, IZZ ≤ 70mA) |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional data bus + 2 parity bits; flow-through output path (no output register) |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: data valid at tCD (7.5ns) after CLK rising edge - critical for deterministic latency in packet buffering |
| Single-cycle deselect | Device enters high-Z state within one clock cycle upon chip disable - prevents bus contention during rapid address switching |
| Self-timed write cycle | Internal timing logic completes write without external wait-state generation - simplifies controller interface design |
| Asynchronous ZZ sleep control | ZZ=HIGH immediately gates internal clock and reduces supply current to ≤70mA - enables dynamic power gating in burst-idle intervals |
| Linear/interleaved burst ordering | LBO pin statically configures burst address sequence (A0/A1 progression) to match cache line or DMA engine expectations |
Applications
| Packet Buffer Memory | DSP Data Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decision and rewrite. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to MAC controller's 18-bit data bus and 117MHz clock domain. Use Value: 7.5ns tCD and single-cycle deselect enable back-to-back frame buffering with no pipeline stalls at line rate (1Gbps+). | Use Scenario: Serving as on-chip data cache for TI C6000 or Analog Devices SHARC processors executing real-time FIR filtering. IC Role / Device Role / Timing Role: Synchronous memory co-processor providing burst-aligned 18-bit data words to DSP's EMIF with zero-output-register latency. Use Value: Flow-through outputs and 4-word burst mode reduce instruction stall cycles by 30% versus registered-output SRAMs in tight loop kernels. |
| Industrial PLC I/O Mapping | Radar Signal Processing FIFO |
Use Scenario: Holding real-time sensor input/output mapping tables in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Industrial-temperature SRAM storing configurable I/O assignment registers accessed by ARM Cortex-M7 core. Use Value: –40°C to +85°C rating and ZZ sleep mode ensure reliable operation during thermal cycling and energy-efficient idle periods. | Use Scenario: Implementing high-speed FIFO between ADC front-end and FFT accelerator in automotive radar ECU. IC Role / Device Role / Timing Role: Synchronous buffer accepting 117MHz sampled IQ data and delivering burst-aligned 18-bit words to processing engine. Use Value: 512K×18 capacity supports ≥1.2ms of 100Msps sampling; tCHZ ≤3.5ns ensures clean data handoff during burst transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1375BV25-7BBXC | 512K×18, 3.3V, 7ns access, 119-ball BGA only - no TQFP option; no LBO pin (fixed interleaved burst) | Requires PCB redesign for BGA; lacks LBO flexibility for custom burst alignment | Select when BGA footprint and fixed interleaved burst match system architecture |
| AS7C35128PFSIG | 512K×18, 3.3V, 10ns access (100MHz), 100-pin TQFP - slower speed, no ZZ sleep mode, no ADV/ADSC/ADSP pins | Compatible pinout but lacks burst control and power-down features - suitable for non-burst, lower-speed control plane use | Select when cost sensitivity outweighs burst performance and sleep-mode requirements |
Compared with CY7C1375BV25-7BBXC and AS7C35128PFSIG, the 71V67903S75BQI uniquely delivers 7.5ns access in TQFP with configurable burst order and hardware sleep control - enabling both high throughput and dynamic power management in space-constrained industrial designs.
Availability
71V67903S75BQI is available at Aetrix Electronics and suitable for packet buffering, DSP caching, and industrial I/O mapping requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.
Supply support for 71V67903S75BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions.
The 71V67903 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for demanding real-time applications in networking, telecommunications, and industrial automation where deterministic latency and burst bandwidth are critical.
FAQ
What is the maximum operating frequency supported by the 71V67903S75BQI?
The 71V67903S75BQI supports up to 117MHz clock frequency with 7.5ns access time, as specified in its commercial and industrial grade timing tables. This maximum frequency assumes proper signal integrity, VDD/VDDQ within 3.135V–3.465V, and ambient temperature within –40°C to +85°C. The 71V67903S75BQI achieves this performance using a flow-through output architecture that eliminates output register delay.
Does the 71V67903S75BQI support byte-level write control?
Yes, the 71V67903S75BQI supports byte-level writes via BWE and BW1–BW2 inputs. BW1 controls the lower 9-bit word (I/O0–I/O8 and I/OP1), and BW2 controls the upper 9-bit word (I/O9–I/O17 and I/OP2). Per datasheet note, BW3 and BW4 are not applicable for the 71V67903S75BQI - unlike the 71V67703 variant - making it a true 18-bit-wide device with dual-byte granularity.
How does the LBO pin affect burst addressing in the 71V67903S75BQI?
The LBO pin on the 71V67903S75BQI statically selects burst address order: LBO=LOW enables linear burst (A0/A1 increment sequentially), while LBO=HIGH enables interleaved burst (A0/A1 follow Gray-code-like pattern). This configuration must remain static during operation per datasheet requirement. The 71V67903S75BQI uses this pin to align burst sequences with processor cache line or DMA engine expectations without software overhead.
What is the power consumption of the 71V67903S75BQI in sleep mode?
In full sleep mode (ZZ=HIGH), the 71V67903S75BQI draws ≤70mA supply current under industrial temperature conditions (–40°C to +85°C) with VDD/VDDQ at maximum rating. This current includes core and I/O rail contributions. The ZZ input asynchronously gates the internal clock and places all outputs in high-impedance state, making the 71V67903S75BQI suitable for dynamic power gating in burst-oriented applications.
Is the 71V67903S75BQI pin-compatible with other devices in the 71V67xx family?
The 71V67903S75BQI shares the same 100-pin TQFP (PKG100) footprint with the 71V67703, but differs in pin function: A18 is active and BW3/BW4 are No Connect on the 71V67903S75BQI, whereas those pins drive byte enables in the 256K×36 variant. Therefore, direct PCB substitution requires verification of address width and byte-enable usage - the 71V67903S75BQI is not drop-in compatible without schematic review.
71V67903S75BQI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67903S75BQI FAQ
1.How can I place an order for 71V67903S75BQI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67903S75BQI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67903S75BQI reliable?
The price and inventory of 71V67903S75BQI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S75BQI is usually 5 days.
3.What payment methods are accepted for 71V67903S75BQI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67903S75BQI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V67903S75BQI?
71V67903S75BQI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67903S75BQI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67903S75BQI?
For technical support, including 71V67903S75BQI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S75BQI requirements.
6.How does Aetrix verify that 71V67903S75BQI is sourced from the original manufacturer or authorized distributors?
All 71V67903S75BQI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S75BQI meets industry standards.
7.What is the process for return or replacement of 71V67903S75BQI?
All 71V67903S75BQI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S75BQI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67903S75BQI part is unused and in its original packaging.
Return procedure for 71V67903S75BQI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67903S75BQI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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