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Renesas 71V67903S75BQI8
- Part No.:
- 71V67903S75BQI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67903S75BQI8.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,562
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Product details
Overview
71V67903S75BQI8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time, and single-cycle deselect. It supports burst read/write operations, self-timed writes via GW/BWE/BWx controls, and linear/interleaved burst ordering via LBO. Used in high-speed networking packet buffers and FPGA co-processor memory subsystems.
For engineers reviewing the 71V67903S75BQI8 datasheet, 71V67903S75BQI8 pinout, 71V67903S75BQI8 application, or 71V67903S75BQI8 equivalent, key selection criteria include its 7.5ns tCD timing, 100-pin TQFP package, industrial temperature range (–40°C to +85°C), and support for byte-selectable writes without output registers.
Technical Context
This SRAM implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) outputs - enabling minimal read latency. Its internal burst counter advances on ADV=LOW and selects sequence order via static LBO input.
The device uses dual power domains: 3.3V core (VDD) and 3.3V I/O (VDDQ), with asynchronous ZZ-controlled sleep mode reducing current to ≤70mA. Write operation supports global (GW) or per-byte (BW1–BW4) enable, though BW3/BW4 are not applicable for 71V67903 per datasheet Note 1.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9Mbit); configured as 18-bit-wide data bus with A0–A18 addressing |
| Access Time (tCD) | 7.5ns max - defines minimum clock-to-data delay for first burst word in flow-through output path |
| Maximum Clock Frequency | 117MHz - derived from tCYC ≥ 8.5ns; enables four-word burst at full speed |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); independent rails allow I/O voltage stability during core switching |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments without derating |
| Power Consumption | IDDTYP = 285mA (max) at 117MHz; ISB2 = 165mA (deselected, clock running); IZZ = 70mA (sleep mode) |
| Burst Mode Control | LBO pin selects linear (LBO=LOW) or interleaved (LBO=HIGH) 4-word address sequence; static configuration |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V67903S75BQI8" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous inputs latched on rising CLK edge when ADSP/ADSC active; A0–A17 used for 512K×18 addressing |
| CLK | System Clock Input | Single-ended CMOS clock; all synchronous timing referenced to rising edge; no internal PLL |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input decode: CE=LOW, CS0=HIGH, CS1=LOW enables device; supports multi-chip memory expansion |
| GW, BWE, BW1–BW4 | Write Controls | GW enables full 18-bit write; BWE gates BWx; BW1–BW2 control I/O0–I/O15 (BW3/BW4 not used in 71V67903) |
| OE | Output Enable | Asynchronous - drives I/O pins to high-Z immediately on OE=HIGH, critical for bus sharing |
| LBO | Burst Order Select | DC-level input: LOW = linear burst (00→01→10→11), HIGH = interleaved; must remain static during operation |
| ZZ | Sleep Mode Input | Asynchronous HIGH disables internal clock and reduces ICC to ≤70mA; retains data without refresh |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18 data bits + 2 parity bits; flow-through outputs - no register delay; synchronous inputs registered on CLK rise |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - tCD = 7.5ns is pure array access + routing, enabling tight timing closure in FPGA interfaces |
| Single-cycle deselect | Outputs go high-Z within one CLK cycle after chip disable - prevents bus contention during rapid bank switching |
| Self-timed write cycle | Internal timing logic resolves write completion without external wait-state generation; simplifies controller design |
| Byte-selectable write (BW1/BW2) | Enables 9-bit granularity writes to upper/lower 9-bit halves of 18-bit word - reduces unnecessary data overwrites |
| Industrial temperature support | Rated –40°C to +85°C with full AC/DC specs guaranteed - suitable for base station, industrial PLC, and transportation systems |
Applications
| Network Packet Buffer | FPGA Co-Processor Memory |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decision. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer between MAC and switch fabric; operates at 117MHz with burst reads aligned to frame boundaries. Use Value: 7.5ns tCD and flow-through outputs minimize pipeline stalls; single-cycle deselect allows dynamic buffer allocation across multiple ports. |
Use Scenario: Offloading compute-intensive tasks (e.g., CRC, encryption) from host CPU using FPGA-accelerated datapath. IC Role / Device Role / Timing Role: Local instruction/data memory for soft-core processor or DMA engine inside FPGA; interfaced via AXI-lite or custom parallel bus. Use Value: Synchronous 18-bit interface matches common FPGA I/O widths; burst mode delivers four 18-bit words per address, improving throughput vs. discrete reads. |
| Telecom Line Card Cache | Real-Time Industrial Controller |
Use Scenario: Caching protocol headers and metadata in optical transport equipment (OTN/SDH) for fast lookup and modification. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for line card ASICs; accessed via dedicated burst-capable bus with ADV-controlled sequencing. Use Value: Linear/interleaved burst modes match different header parsing patterns; industrial temp rating ensures reliability in sealed chassis. |
Use Scenario: Storing motion control trajectory tables and sensor fusion results in CNC or robotics servo drives. IC Role / Device Role / Timing Role: Deterministic-access memory for real-time motion sequencer; synchronized to system clock with guaranteed tCD ≤ 7.5ns. Use Value: ZZ sleep mode reduces power during idle cycles without losing position data; VDD/VDDQ separation improves noise immunity in mixed-signal environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-7BBXC | 512K × 18-bit, 7ns access, 119-ball BGA only; no TQFP option; supports QDR-II+ compatible timing | Requires PCB redesign for BGA; better suited for space-constrained, high-density designs where QDR compatibility matters | Choose if migrating to higher-density packaging and need QDR-II+ feature set; not drop-in for TQFP footprint |
| AS7C35128PFSI-75 | 512K × 18-bit, 75MHz max (13.3ns tCD), 100-pin TQFP; single-supply (3.3V only), no VDDQ separation | Lower performance ceiling; lacks flow-through output and burst advance control (ADV/LBO); simpler interface | Choose for cost-sensitive, non-burst applications where 13.3ns latency is acceptable and layout reuse is critical |
Compared with CY7C1371DV33-7BBXC and AS7C35128PFSI-75, the 71V67903S75BQI8 uniquely combines 7.5ns flow-through timing, industrial TQFP packaging, and configurable burst sequencing - making it optimal for legacy-compatible, high-performance embedded systems requiring deterministic latency.
Availability
71V67903S75BQI8 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor memory, and real-time industrial control applications requiring stable component supply across extended product lifecycles.
Supply support for 71V67903S75BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and communications markets.
The 71V67903 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking, test equipment, and real-time embedded systems.
FAQ
What is the maximum operating frequency of the 71V67903S75BQI8?
The 71V67903S75BQI8 supports up to 117MHz operation, corresponding to a minimum clock cycle time (tCYC) of 8.5ns. This frequency is guaranteed under industrial conditions (–40°C to +85°C) with VDD and VDDQ at 3.3V ±5%. The 7.5ns tCD parameter enables first-word burst delivery within this timing window.
Does the 71V67903S75BQI8 support both linear and interleaved burst modes?
Yes, the 71V67903S75BQI8 supports both burst modes via the LBO pin: LBO=LOW selects linear order (00→01→10→11), and LBO=HIGH selects interleaved order (00→01→11→10). This selection is static - LBO must not change during active operation, and configuration occurs at power-up or reset.
Are BW3 and BW4 functional on the 71V67903S75BQI8?
No, BW3 and BW4 are not applicable for the 71V67903S75BQI8, as confirmed in the datasheet Note 1 under Pin Description Summary. Only BW1 and BW2 are used to control byte writes for the lower and upper 9-bit segments of the 18-bit data bus (I/O0–I/O8 and I/O9–I/O17).
What is the purpose of the ZZ pin on the 71V67903S75BQI8?
The ZZ pin on the 71V67903S75BQI8 enables asynchronous sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to ≤70mA while retaining memory contents. Data retention is guaranteed across the full industrial temperature range, and recovery requires tZZR ≥ 100ns after ZZ returns LOW.
How does the 71V67903S75BQI8 handle output disable during deselection?
The 71V67903S75BQI8 provides single-cycle deselect: when chip enable signals (CE, CS0, CS1) transition to deselect state, outputs enter high-impedance within one CLK cycle. This behavior - combined with asynchronous OE control - prevents bus contention in multi-SRAM systems and simplifies timing-critical memory arbitration.
71V67903S75BQI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67903S75BQI8 FAQ
1.How can I place an order for 71V67903S75BQI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67903S75BQI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67903S75BQI8 reliable?
The price and inventory of 71V67903S75BQI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S75BQI8 is usually 5 days.
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Once your 71V67903S75BQI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67903S75BQI8?
For technical support, including 71V67903S75BQI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S75BQI8 requirements.
6.How does Aetrix verify that 71V67903S75BQI8 is sourced from the original manufacturer or authorized distributors?
All 71V67903S75BQI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S75BQI8 meets industry standards.
7.What is the process for return or replacement of 71V67903S75BQI8?
All 71V67903S75BQI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S75BQI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67903S75BQI8 part is unused and in its original packaging.
Return procedure for 71V67903S75BQI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67903S75BQI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
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