My Inquiry
My Account
Renesas 71V67903S80BG
- Part No.:
- 71V67903S80BG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67903S80BG.pdf
- Description:
- IC SRAM 9MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,891
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V67903S80BG from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and burst-mode operation. It supports 8.0 ns access time at up to 100 MHz clock frequency, operates across industrial temperature range (–40°C to +85°C), and uses JEDEC-standard 100-pin TQFP packaging. It serves as high-speed buffer/cache memory in networking line cards and telecom baseband processors.
For engineers reviewing the 71V67903S80BG datasheet, 71V67903S80BG pinout, 71V67903S80BG application, or 71V67903S80BG equivalent, key selection criteria include burst address sequencing (LBO-controlled linear/interleaved), self-timed write with global/byte write enables, flow-through output timing, ZZ sleep mode power control, and compatibility with 3.3V I/O systems requiring deterministic read latency.
Technical Context
The 71V67903S80BG implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but no output register-enabling true flow-through data delivery after tCD delay. Its internal burst counter advances on ADV=LOW and selects next addresses based on LBO state (linear or interleaved), delivering four consecutive words per burst request.
Write operations support both global (GW) and byte-level (BW1–BW2) control, with BWE gating byte enables and self-timing eliminating external wait-state logic. The device features dual chip-select architecture (CS0/CS1), asynchronous OE and ZZ inputs, and dedicated ADSP/ADSC status inputs for cache-coherent processor interfacing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (983,040 bits); supports 18-bit wide data bus interface without width conversion logic |
| Access Time / Max Frequency | 8.0 ns access time; guarantees ≤10 ns clock cycle (tCYC), enabling reliable 100 MHz system clock operation |
| Core & I/O Voltage | 3.3 V ±5% core (VDD) and I/O (VDDQ); eliminates level-shifting requirements in 3.3V digital systems |
| Burst Mode | Four-word burst with programmable order (LBO pin); reduces address bus traffic by 75% per memory transaction |
| Power-Down Current | IZZ = 50–70 mA in full sleep mode (ZZ HIGH); cuts active IDD by >80% during idle periods |
| Operating Temperature | –40°C to +85°C industrial grade; qualified for deployment in base station RF units and industrial controllers |
| Package | JEDEC-standard 100-pin thin quad flatpack (TQFP, 14 mm × 20 mm); compatible with standard SMT reflow profiles |
Pinout & Package
71V67903S80BG is packaged in a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm lead pitch. Pin 1 is located at top-left corner (marked by dot or bevel), and pin numbering proceeds counterclockwise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADSP or ADSC is LOW and CE is active |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input decode: CE=LOW, CS0=HIGH, CS1=LOW enables device; allows multi-SRAM bank selection |
| GW, BWE, BW1–BW2 | Write Control Inputs | GW writes all 18 bits; BWE enables BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 |
| CLK, ADV, ADSP, ADSC | Burst Timing & Status | CLK drives all registers; ADV advances burst counter; ADSP/ADSC load address register from processor/cache controller |
| LBO, ZZ, OE | Mode & Output Control | LBO selects linear (LOW) or interleaved (HIGH) burst order; ZZ enables sleep mode; OE asynchronously enables outputs |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional data bus + 2 parity bits; flow-through outputs deliver data without pipeline delay |
| VDD, VDDQ, VSS | Power & Ground | VDD = 3.3V core supply; VDDQ = 3.3V I/O supply (separate for noise isolation); VSS = common ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: data appears at I/O pins within tCD (≤8.0 ns) after CLK rise-critical for zero-wait-state systems |
| Single-cycle deselect | Device enters high-Z state on next clock edge after chip disable-prevents bus contention during rapid bank switching |
| Self-timed write cycle | Internal timing logic completes write without external wait signals; simplifies FPGA/CPU interface design and reduces PCB routing complexity |
| Linear/interleaved burst ordering | LBO pin selects burst sequence (A0/A1 advance per word), matching either processor cache line layout or DSP algorithm stride patterns |
| Asynchronous sleep mode (ZZ) | Reduces supply current to ≤70 mA while retaining data; enables dynamic power gating in burst-traffic applications like packet buffering |
Applications
| Telecom Line Card Buffering | Industrial PLC Data Logging |
|---|---|
Use Scenario: High-throughput packet buffering in 10Gbps Ethernet line cards where backpressure management requires low-latency, deterministic memory access. IC Role / Device Role / Timing Role: Primary burst-access SRAM serving as ingress/egress FIFO between MAC and switch fabric; handles 100 MHz read/write bursts with sub-10 ns tCD. Use Value: Flow-through outputs and single-cycle deselect prevent pipeline stalls during rapid context switches between multiple traffic streams. | Use Scenario: Real-time cyclic data acquisition in modular PLCs, capturing sensor values at 1 kHz with timestamped storage into nonvolatile backup buffers. IC Role / Device Role / Timing Role: High-reliability scratchpad memory holding transient process variables; accessed synchronously via microcontroller's EBI with burst reads for batch transfers. Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure stable operation in uncontrolled cabinet environments while minimizing standby power. |
| Baseband Processor Cache | Medical Imaging Frame Buffer |
Use Scenario: L1/L2 cache extension for multicore DSPs in wireless baseband processing, supporting FFT, channel estimation, and MIMO matrix operations. IC Role / Device Role / Timing Role: Low-latency, wide-data SRAM interfaced directly to DSP EBI; burst mode aligns with 64-bit or 128-bit instruction/data fetch widths. Use Value: 512K × 18 organization provides 1 Mbit capacity with native 18-bit granularity-matching typical DSP word sizes and avoiding packing/unpacking overhead. | Use Scenario: Real-time frame buffering in portable ultrasound or digital X-ray systems, where image data must be captured, processed, and displayed with minimal latency. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as ping-pong buffer between ADC capture engine and GPU render pipeline; synchronized via ADV/CLK for precise timing control. Use Value: Self-timed write and flow-through read eliminate timing margin uncertainty-ensuring pixel data integrity across varying frame rates (15–60 fps). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-100AXC | 256K × 32 organization; 100 MHz, 3.3V; 100-pin TQFP; no LBO or ADSP/ADSC inputs | Optimized for 32-bit microprocessor buses; lacks cache-status interface and configurable burst order | Select when wider data path (32-bit) is required and burst control simplicity is preferred over cache coherency support |
| AS7C33128PFS-10BIN | 128K × 32 organization; 10 ns access; 3.3V; 100-pin TQFP; no burst mode or ZZ sleep | Lower density, no advanced timing features; targets cost-sensitive embedded controllers rather than high-performance comms | Select for basic synchronous buffering where burst efficiency and deep sleep are not required |
Compared with CY7C1371BV33-100AXC and AS7C33128PFS-10BIN, the 71V67903S80BG delivers higher density (512K×18 vs. 256K×32 or 128K×32), integrated cache-status interface (ADSP/ADSC), and hardware-configurable burst sequencing-making it uniquely suited for cache-coherent, burst-optimized telecom and DSP subsystems.
Availability
71V67903S80BG is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and medical imaging systems requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.
Supply support for 71V67903S80BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for communications, computing, and industrial markets.
The 71V67903S80BG belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-intensive applications in networking equipment, baseband processors, and real-time control systems.
FAQ
What memory configuration does the 71V67903S80BG support?
The 71V67903S80BG is organized as 512K × 18 bits (983,040 total bits), providing an 18-bit data bus width optimized for DSP and telecom baseband processors. It does not support the 256K × 36 configuration-this is exclusive to the 71V67703 variant. The 71V67903S80BG uses A0–A17 for addressing and includes dedicated BW1/BW2 pins for 9-bit byte control.
How does the LBO pin affect burst behavior in the 71V67903S80BG?
The LBO (Linear Burst Order) pin on the 71V67903S80BG selects burst address sequencing: when LBO = LOW, the device uses linear order (A0/A1 increment sequentially); when LBO = HIGH, it uses interleaved order (A0/A1 toggle per word). This setting must remain static during operation and is sampled at power-up or configuration time (tCFG ≥ 40 ns). The 71V67903S80BG does not support BW3/BW4-only BW1 and BW2 are functional.
What is the role of ADSP and ADSC inputs in the 71V67903S80BG?
ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are synchronous inputs that trigger loading of the internal address register on the rising edge of CLK. ADSP is gated by CE and used for CPU-initiated accesses; ADSC operates independently and enables cache-coherent memory access without CPU intervention. Both are essential for implementing snoop-based cache protocols in multiprocessor telecom systems using the 71V67903S80BG.
Does the 71V67903S80BG support true 3.3V-only operation?
Yes-the 71V67903S80BG requires only two 3.3V supplies: VDD (core, 3.3V ±5%) and VDDQ (I/O, 3.3V ±5%). There is no separate 2.5V or 1.8V rail. All DC and AC specifications-including VIH/VIL thresholds, tCD, and IDD-are guaranteed over the full 3.135V–3.465V range for both supplies. Input leakage on LBO is internally pulled to VDD if left floating, ensuring robust default behavior.
What package and pin compatibility does the 71V67903S80BG offer?
The 71V67903S80BG is supplied in a JEDEC-standard 100-pin TQFP (PKG100) with 0.5 mm pitch and 14 mm × 20 mm footprint. It shares pinout compatibility with the 71V67703 in 256K × 36 mode for address, data, and control signals-but differs in BW3/BW4 functionality (not used on 71V67903S80BG) and A18 usage (A18 is NC in 512K × 18 mode). Pin 64 is unused and may be left floating.
71V67903S80BG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67903S80BG FAQ
1.How can I place an order for 71V67903S80BG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67903S80BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67903S80BG reliable?
The price and inventory of 71V67903S80BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S80BG is usually 5 days.
3.What payment methods are accepted for 71V67903S80BG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67903S80BG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V67903S80BG?
71V67903S80BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67903S80BG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67903S80BG?
For technical support, including 71V67903S80BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S80BG requirements.
6.How does Aetrix verify that 71V67903S80BG is sourced from the original manufacturer or authorized distributors?
All 71V67903S80BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S80BG meets industry standards.
7.What is the process for return or replacement of 71V67903S80BG?
All 71V67903S80BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S80BG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67903S80BG part is unused and in its original packaging.
Return procedure for 71V67903S80BG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67903S80BG Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
