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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67903S80BG8

Name: 71V67903S80BG8
Brand: Renesas
SKU: 71V67903S80BG8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67903S80BG8

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V67903S80BG8.pdf

Description:: IC SRAM 9MBIT PAR 119PBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

71V67903S80BG8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and burst-mode operation. It supports 8.0 ns access time at up to 100 MHz clock frequency, features LBO-controlled linear/interleaved burst sequencing, self-timed write with global and byte-level write enables, and operates across industrial temperature range (–40°C to +85°C). It is used in high-speed networking packet buffers and real-time DSP data caching.

For engineers reviewing the 71V67903S80BG8 datasheet, 71V67903S80BG8 pinout, 71V67903S80BG8 application, or 71V67903S80BG8 equivalent, key selection considerations include its 100-pin TQFP package, 3.3V core/I/O supply, synchronous burst read/write timing, ZZ-controlled sleep mode, and absence of BW3/BW4 pins - critical for PCB layout and power management in telecom line cards and FPGA co-processor memory interfaces.

Technical Context

The 71V67903S80BG8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, and a flow-through (unregistered) output path. Its internal burst counter generates four sequential addresses per initial address, with ordering determined by the asynchronous LBO pin state (LOW = linear, HIGH = interleaved).

Write operations are self-timed and support global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW2 only - BW3/BW4 are not applicable per datasheet note). Chip select logic uses CE, CS0 (active HIGH), and CS1 (active LOW) for hierarchical enable control, while ADSP/ADSC provide processor/cache-address status synchronization.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18-bit (9 Mbit); supports 18-bit wide data bus interface with no word-splitting overhead.
Access Time / Max Clock	8.0 ns / 100 MHz; guarantees deterministic read latency aligned to CLK rising edge for real-time pipeline design.
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate supplies allow I/O voltage domain isolation in mixed-signal systems.
Burst Mode	Four-word burst with LBO-selectable linear or interleaved sequence; eliminates repeated address setup for sequential accesses.
Power Management	ZZ input enables full sleep mode (IZZ ≤ 70 mA); reduces active standby current to ISB1 ≤ 70 mA when deselected.
Temperature Range	Industrial: –40°C to +85°C; qualified for base station RF modules and industrial PLC backplanes.
Package	JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm footprint; compatible with standard SMT reflow profiles.

Pinout & Package

71V67903S80BG8 is packaged in a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm lead pitch. Pin 1 is located at top-left corner (marked dot), and pin numbering proceeds counterclockwise.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit synchronous address bus; latched on rising CLK edge when ADSP or ADSC is asserted LOW.
CE, CS0, CS1	Chip Enable / Selects	Three-level chip select hierarchy: CE (active LOW), CS0 (active HIGH), CS1 (active LOW); enables multi-SRAM decoding.
GW, BWE, BW1–BW2	Write Control Inputs	Global Write (GW), Byte Write Enable (BWE), and two byte-selects (BW1 = I/O0–I/O8/I/OP1; BW2 = I/O9–I/O17/I/OP2); BW3/BW4 not connected per datasheet.
CLK, ADV, ADSP, ADSC	Timing & Burst Control	CLK drives all synchronous registers; ADV advances burst counter; ADSP/ADSC synchronize address capture from processor/cache.
LBO, ZZ, OE	Mode & Output Control	LBO (asynchronous) selects burst order; ZZ (asynchronous) enters low-power sleep; OE (asynchronous) enables/disables output drivers.
I/O0–I/O17, I/OP1–I/OP2	Data I/O	18-bit bidirectional data bus plus 2 parity bits; flow-through outputs eliminate output register delay for minimum read-to-data timing.

Key Features

Feature	Design Value
Flow-through output architecture	Eliminates output register delay: tCD = 8.0 ns max ensures immediate data availability after CLK edge - critical for tight-timing FPGA interfaces.
Single-cycle deselect	Output drivers enter high-Z within one CLK cycle upon deassertion of CE/CS0/CS1 - prevents bus contention during rapid bank switching.
Self-timed write cycle	Internal timing logic completes write without external wait-state generation; simplifies controller design and improves throughput in burst-write scenarios.
Configurable burst order (LBO)	LBO pin statically selects linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst addressing - matches cache line layouts in ARM Cortex-A/R processors.
Industrial temperature qualification	Guaranteed operation from –40°C to +85°C with full AC/DC specs maintained - suitable for outdoor wireless infrastructure and rail signaling systems.

Applications

Telecom Packet Buffering	FPGA Co-Processor Cache
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2 switch ASICs before forwarding decision. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory between MAC and switching fabric; synchronized via 100 MHz system clock. Use Value: 8.0 ns access + burst mode delivers 4×18-bit data per address cycle, enabling line-rate 10Gbps frame buffering without stall cycles.	Use Scenario: Offloading compute-intensive FFT and filtering tasks from FPGA fabric using dedicated memory-resident algorithms. IC Role / Device Role / Timing Role: Dual-port accessible SRAM acting as scratchpad memory for soft-core RISC-V or MicroBlaze processors. Use Value: Flow-through outputs and single-cycle deselect allow seamless handoff between FPGA logic and processor read/write bursts without arbitration overhead.
DSP Real-Time Data Caching	Industrial PLC Data Logging
Use Scenario: Holding sensor sample streams and intermediate filter coefficients in motor control DSP subsystems. IC Role / Device Role / Timing Role: Synchronous SRAM interfaced directly to C6000-series DSP EMIF; clocked at 100 MHz for deterministic latency. Use Value: Self-timed write and GW/BWE controls enable atomic coefficient updates without disrupting ongoing ADC data writes to adjacent memory regions.	Use Scenario: Buffering time-stamped I/O event logs in programmable logic controllers deployed in factory automation cabinets. IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM (with external battery/supercap) storing last 72 hours of alarm history and process trends. Use Value: ZZ sleep mode reduces quiescent current to ≤70 mA during idle periods, extending backup runtime and meeting IEC 61131-2 power budgets.

Telecom Packet Buffering

FPGA Co-Processor Cache

Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2 switch ASICs before forwarding decision.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory between MAC and switching fabric; synchronized via 100 MHz system clock.

Use Value: 8.0 ns access + burst mode delivers 4×18-bit data per address cycle, enabling line-rate 10Gbps frame buffering without stall cycles.

Use Scenario: Offloading compute-intensive FFT and filtering tasks from FPGA fabric using dedicated memory-resident algorithms.

IC Role / Device Role / Timing Role: Dual-port accessible SRAM acting as scratchpad memory for soft-core RISC-V or MicroBlaze processors.

Use Value: Flow-through outputs and single-cycle deselect allow seamless handoff between FPGA logic and processor read/write bursts without arbitration overhead.

DSP Real-Time Data Caching

Industrial PLC Data Logging

Use Scenario: Holding sensor sample streams and intermediate filter coefficients in motor control DSP subsystems.

IC Role / Device Role / Timing Role: Synchronous SRAM interfaced directly to C6000-series DSP EMIF; clocked at 100 MHz for deterministic latency.

Use Value: Self-timed write and GW/BWE controls enable atomic coefficient updates without disrupting ongoing ADC data writes to adjacent memory regions.

Use Scenario: Buffering time-stamped I/O event logs in programmable logic controllers deployed in factory automation cabinets.

IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM (with external battery/supercap) storing last 72 hours of alarm history and process trends.

Use Value: ZZ sleep mode reduces quiescent current to ≤70 mA during idle periods, extending backup runtime and meeting IEC 61131-2 power budgets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371BV25-100AXC	256K × 32-bit, 3.3V, 100 MHz, 100-pin TQFP; lacks LBO and ADV; uses different burst control (OE-based).	Lower density (8 Mbit vs. 9 Mbit); no linear/interleaved burst selection; requires redesign of burst address sequencing logic.	Select only if 32-bit bus width and simplified burst control are prioritized over density and flexible burst ordering.
AS7C3256A-10JIN	256K × 32-bit, 3.3V, 10 ns/100 MHz, 100-pin TQFP; asynchronous OE, no ZZ sleep, no burst mode.	Asynchronous output enable; no burst capability; higher access time (10 ns); no low-power sleep mode.	Choose for cost-sensitive, non-burst, non-real-time applications where sleep mode and burst efficiency are unnecessary.

Compared with CY7C1371BV25-100AXC and AS7C3256A-10JIN, the 71V67903S80BG8 uniquely delivers 9 Mbit density with configurable burst sequencing and hardware sleep control - essential for power-constrained, high-throughput embedded systems requiring deterministic timing.

Availability

71V67903S80BG8 is available at Aetrix Electronics and suitable for telecom infrastructure, FPGA-accelerated computing, and industrial control applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for 71V67903S80BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71V67903S80BG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory interfacing in network processors, DSPs, and FPGAs operating at 100 MHz and above.

FAQ

What memory organization does the 71V67903S80BG8 support?

The 71V67903S80BG8 is organized as 512K × 18 bits (9 Mbit total), supporting an 18-bit data bus width. It does not support the 256K × 36 configuration - that variant is implemented in the 71V67703 family member. This organization is optimized for 16/18-bit DSP and microcontroller interfaces.

Does the 71V67903S80BG8 support both linear and interleaved burst modes?

Yes, the 71V67903S80BG8 supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear sequence, LBO = HIGH selects interleaved sequence. The burst always delivers four consecutive 18-bit words per address, and LBO must remain static during operation per datasheet specification.

Which byte write enable pins are functional on the 71V67903S80BG8?

Only BW1 and BW2 are functional on the 71V67903S80BG8. BW1 controls I/O0–I/O8 and I/OP1 (first 9-bit byte); BW2 controls I/O9–I/O17 and I/OP2 (second 9-bit byte). BW3 and BW4 are not applicable and must be left unconnected, as explicitly stated in the datasheet pin definitions.

What is the role of the ZZ pin on the 71V67903S80BG8?

The ZZ pin on the 71V67903S80BG8 is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces supply current to ≤70 mA (ISB1) or ≤70 mA (IZZ), enabling ultra-low-power standby. Data retention is guaranteed in this mode, and recovery time (tZZR) is 100 ns minimum after ZZ returns LOW.

Is the 71V67903S80BG8 available in packages other than 100-pin TQFP?

No - the suffix "S80BG8" explicitly denotes the 100-pin TQFP package (PKG100) with commercial-grade speed (8.0 ns) and industrial temperature range (–40°C to +85°C). Other variants like 71V67903S80BGI use BGA packages, but the 71V67903S80BG8 is exclusively TQFP-packaged per IDT's ordering information.

71V67903S80BG8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: 100 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V67903S80BG8 FAQ

1.How can I place an order for 71V67903S80BG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67903S80BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67903S80BG8 reliable?

The price and inventory of 71V67903S80BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S80BG8 is usually 5 days.

3.What payment methods are accepted for 71V67903S80BG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67903S80BG8 transactions.

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4.How is shipping managed for 71V67903S80BG8?

71V67903S80BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67903S80BG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67903S80BG8?

For technical support, including 71V67903S80BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S80BG8 requirements.

6.How does Aetrix verify that 71V67903S80BG8 is sourced from the original manufacturer or authorized distributors?

All 71V67903S80BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S80BG8 meets industry standards.

7.What is the process for return or replacement of 71V67903S80BG8?

All 71V67903S80BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S80BG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67903S80BG8 part is unused and in its original packaging.

Return procedure for 71V67903S80BG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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