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Renesas 71V67903S80BQ
- Part No.:
- 71V67903S80BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67903S80BQ.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,075
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Product details
Overview
71V67903S80BQ from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and burst-mode operation. It supports 8.0 ns access time at up to 100 MHz clock frequency, features LBO-controlled linear/interleaved burst sequencing, self-timed write with global and byte-level write enables, and operates across industrial temperature range (–40°C to +85°C). It is used in high-bandwidth networking buffers and real-time DSP data caches.
For engineers reviewing the 71V67903S80BQ datasheet, 71V67903S80BQ pinout, 71V67903S80BQ application, or 71V67903S80BQ equivalent, key selection criteria include burst address advance timing (ADV), asynchronous sleep mode (ZZ), flow-through output latency, 3.3V I/O compatibility, and TQFP-100 package mechanical constraints for PCB layout.
Technical Context
The 71V67903S80BQ implements a synchronous, register-based address/data path with no output registers - enabling true flow-through read latency. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO, supporting both linear and interleaved 4-word bursts from a single address.
Write control is hierarchical: GW enables full 18-bit writes, while BWE gates four independent byte-write enables (BW1–BW4); however, BW3 and BW4 are not applicable to the 71V67903 variant per official pin definition. Sleep mode is entered asynchronously via ZZ=HIGH, gating CLK internally while retaining data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9,112,576 bits), configured as 18-bit wide data bus with A0–A18 addressing |
| Access Time / Max Clock | 8.0 ns access time at 100 MHz clock - defines minimum tCYC = 10 ns for reliable burst reads/writes |
| Supply Voltages | 3.3 V ±5% core (VDD) and 3.3 V ±5% I/O (VDDQ) - requires separate low-noise regulation for each rail |
| Burst Mode Control | LBO input selects linear (LBO=LOW) or interleaved (LBO=HIGH) 4-word burst sequence - static configuration, must not change during operation |
| Power-Down Current | IZZ = 50–70 mA max in full sleep mode (ZZ=HIGH) - enables low-power standby in idle system states |
| Operating Temperature | Industrial range: –40°C to +85°C - validated for embedded telecom and industrial control environments |
| Package | JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm footprint - compatible with standard SMT reflow profiles |
Pinout & Package
71V67903S80BQ is packaged in a JEDEC-standard 100-pin TQFP (PKG100), measuring 14 mm × 20 mm. Pin functions are synchronized to CLK except OE (asynchronous) and ZZ (asynchronous sleep).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous inputs latched on rising CLK edge when ADSP or ADSC is active; A0/A1 define burst offset in 4-word sequence |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input chip selection logic: CE=LOW, CS0=HIGH, CS1=LOW required for device enable - supports multi-chip memory banks |
| GW, BWE, BW1–BW4 | Write Controls | GW enables full 18-bit write; BWE gates BW1–BW4; BW3/BW4 are NC on 71V67903 - only BW1/BW2 active for byte writes |
| ADV, LBO, ZZ | Mode Control Inputs | ADV=LOW advances burst counter; LBO sets burst order (static); ZZ=HIGH enters asynchronous sleep - all DC-biased, no clock dependency |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O (18-bit + 2 parity) | Synchronous bidirectional bus; flow-through output path (no output register) - data valid tCD after CLK↑; inputs registered on CLK↑ |
| VDD, VDDQ, VSS | Power & Ground | VDD (core), VDDQ (I/O), and VSS pins require local decoupling; VDDQ must be ramped with or after VDD - no sequencing required |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Zero-cycle output register eliminates pipeline delay - data appears tCD after CLK↑, critical for real-time buffer applications |
| Single-cycle deselect | Device transitions to high-Z output state within one clock cycle of chip disable - prevents bus contention in multi-SRAM systems |
| Self-timed write cycle | Internal timing logic completes write without external wait-state generation - simplifies controller interface and improves throughput |
| Asynchronous sleep mode (ZZ) | ZZ=HIGH gates internal CLK and reduces supply current to ≤70 mA - enables rapid power-state transitions without reset or reinitialization |
| Linear/interleaved burst selection | LBO pin configures burst address sequence to match cache line or DMA engine expectations - avoids software remapping overhead |
Applications
| Networking Packet Buffer | DSP Data Cache |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G Ethernet line cards with strict latency budgets. IC Role / Device Role: High-speed, low-latency dual-port buffer interfacing with MAC and traffic manager ASICs. Use Value: 8.0 ns tCD and single-cycle deselect ensure deterministic packet forwarding with sub-10 ns read turnaround. |
Use Scenario: Serving as on-chip data cache for TI C6000 or Analog Devices SHARC processors executing FFT-intensive radar algorithms. IC Role / Device Role: Burst-accessible SRAM providing 100 MHz sustained bandwidth to processor load/store units. Use Value: Linear burst mode (LBO=LOW) delivers four consecutive 18-bit words per address, matching 64-bit bus width and reducing address overhead by 75%. |
| Industrial PLC Memory Module | Medical Imaging Frame Buffer |
|
Use Scenario: Holding real-time I/O scan data and ladder logic state tables in ruggedized programmable logic controllers. IC Role / Device Role: Industrial-temperature SRAM with robust power-down (ZZ) for brown-out resilience and energy-efficient idle states. Use Value: –40°C to +85°C rating and ≤70 mA sleep current enable fanless, sealed enclosure designs compliant with IEC 61131-2. |
Use Scenario: Buffering uncompressed 12-bit medical ultrasound frames (1024×768) prior to FPGA-based beamforming. IC Role / Device Role: Synchronous burst SRAM acting as ping-pong frame store between ADC interface and processing pipeline. Use Value: Flow-through outputs and 100 MHz clock support real-time pixel streaming at >75 MB/s without FIFO synchronization logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-100AXC | 512K × 18-bit, 100 MHz, but uses QCC-100 package (not TQFP); no LBO pin - fixed linear burst only | Lacks configurable burst order; requires PCB redesign due to different thermal pad and pinout | Select if LBO flexibility is unnecessary and QCC-100 thermal performance is prioritized over TQFP manufacturability |
| AS7C35128P-10JCN | 512K × 18-bit, 10 ns access (100 MHz), but asynchronous interface - no CLK, ADV, or burst logic | No burst capability; higher read latency (tAA = 10 ns vs tCD = 8 ns); incompatible timing model | Choose only for legacy designs requiring pin-compatible drop-in replacement without modifying controller firmware or timing constraints |
Compared with CY7C1371DV33-100AXC and AS7C35128P-10JCN, the 71V67903S80BQ uniquely combines TQFP-100 packaging, programmable burst order (LBO), and flow-through latency - making it optimal for new designs requiring flexible, low-jitter memory interfacing in space-constrained industrial layouts.
Availability
71V67903S80BQ is available at Aetrix Electronics and suitable for networking packet buffers, DSP data caches, and industrial PLC memory modules requiring stable component supply and long-term industrial temperature support.
Supply support for 71V67903S80BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface ICs for communications and computing infrastructure.
The 71V67903 belongs to IDT's 3.3V synchronous SRAM product line, designed specifically for low-latency, burst-capable buffering in network processors, DSPs, and real-time control systems.
FAQ
What memory organization does the 71V67903S80BQ implement?
The 71V67903S80BQ implements a 512K × 18-bit organization, meaning it provides 524,288 addresses each storing 18 bits of data (9,112,576 total bits). This configuration uses address lines A0–A18 and supports 18-bit-wide data transfers via I/O0–I/O17 and I/OP1–I/OP2. It is distinct from the 256K × 36 variant (71V67703) in both density and bus width.
Does the 71V67903S80BQ support both linear and interleaved burst modes?
Yes, the 71V67903S80BQ supports both burst modes via the LBO (Linear Burst Order) input pin. When LBO = LOW, the device executes linear burst sequencing; when LBO = HIGH, it uses interleaved burst. The LBO pin is static and must remain stable during operation - changing it mid-burst may cause undefined address sequencing in the 71V67903S80BQ.
Are BW3 and BW4 functional on the 71V67903S80BQ?
No, BW3 and BW4 are not applicable to the 71V67903S80BQ. Per the official datasheet pin definitions, these pins are designated as No Connect (NC) for the 512K × 18 configuration. Only BW1 and BW2 are active, controlling bytes 0–8 and 9–17 respectively. Using BW3/BW4 on the 71V67903S80BQ will have no effect.
What is the role of the ZZ pin on the 71V67903S80BQ?
The ZZ pin on the 71V67903S80BQ enables asynchronous sleep mode. When ZZ is driven HIGH, the internal clock is gated and the device enters its lowest-power state while retaining stored data. Supply current drops to ≤70 mA (industrial grade). ZZ is asynchronous - no clock alignment is required for entry or exit - and the device resumes normal operation within tZZR = 100 ns after ZZ returns LOW.
What package type is used for the 71V67903S80BQ?
The 71V67903S80BQ is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), also referred to as PKG100. Its dimensions are 14 mm × 20 mm with 0.5 mm lead pitch. This package is RoHS-compliant, supports standard reflow soldering, and is mechanically and thermally optimized for high-density industrial PCB layouts.
71V67903S80BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67903S80BQ FAQ
1.How can I place an order for 71V67903S80BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67903S80BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67903S80BQ reliable?
The price and inventory of 71V67903S80BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S80BQ is usually 5 days.
3.What payment methods are accepted for 71V67903S80BQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67903S80BQ transactions.
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4.How is shipping managed for 71V67903S80BQ?
71V67903S80BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67903S80BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67903S80BQ?
For technical support, including 71V67903S80BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S80BQ requirements.
6.How does Aetrix verify that 71V67903S80BQ is sourced from the original manufacturer or authorized distributors?
All 71V67903S80BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S80BQ meets industry standards.
7.What is the process for return or replacement of 71V67903S80BQ?
All 71V67903S80BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S80BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67903S80BQ part is unused and in its original packaging.
Return procedure for 71V67903S80BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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