Renesas 71V67903S80BQ8

Overview

71V67903S80BQ8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and burst-mode capability. It supports 8.0 ns access time at up to 100 MHz clock frequency, operates across industrial temperature range (–40°C to +85°C), and uses JEDEC-standard 100-pin TQFP packaging. It serves as high-speed buffer/cache memory in network packet processors and telecom line cards.

For engineers reviewing the 71V67903S80BQ8 datasheet, 71V67903S80BQ8 pinout, 71V67903S80BQ8 application, or 71V67903S80BQ8 equivalent, key selection criteria include burst order control via LBO, self-timed write with GW/BWE/BWx, flow-through output timing, ZZ-controlled sleep mode, and compatibility with 3.3V I/O systems requiring deterministic read latency.

Technical Context

The 71V67903S80BQ8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs-enabling predictable tCD timing without output register delay. Its internal burst counter generates four sequential addresses per ADV assertion, with ordering determined by the static LBO pin state (linear vs. interleaved).

Burst writes and reads are controlled synchronously via ADSP/ADSC, CE, CS0/CS1, and ADV; OE remains asynchronous for fast output disable. Write operations support global (GW) or byte-level (BW1–BW2 only-BW3/BW4 are not applicable per datasheet note) enable, with BWE gating byte write enables and GW overriding them.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout optimized for signal integrity: dedicated VSS/VDDQ pairs adjacent to I/O banks, separated power/ground planes, and NC pins placed for routing flexibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1315KV18-100BZXI and AS7C331024B-10BIN, the 71V67903S80BQ8 uniquely supports both linear and interleaved burst modes via LBO, retains full cache-controller interface (ADSP/ADSC/ADV), and delivers identical 8.0 ns timing in the same 100-pin TQFP package - making it optimal for upgrade paths in legacy designs.

Availability

71V67903S80BQ8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and industrial motion control applications requiring stable component supply, long-term lifecycle support, and industrial-grade temperature performance.

Supply support for 71V67903S80BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and communications markets.

The 71V67903S80BQ8 belongs to IDT's high-performance synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking, telecom, and real-time control systems.

FAQ

What memory organization does the 71V67903S80BQ8 implement?

The 71V67903S80BQ8 implements a 512K × 18-bit organization (983,040 total bits), configured as an 18-bit-wide data bus with parity bits I/OP1 and I/OP2. This differs from the 256K × 36 variant (71V67703) and is optimized for systems requiring narrower, higher-frequency data paths. The 71V67903S80BQ8 uses A0–A17 for addressing and supports burst sequences of four consecutive 18-bit words.

Does the 71V67903S80BQ8 support byte write functionality, and which byte lanes are active?

Yes, the 71V67903S80BQ8 supports byte write control via BW1 and BW2, with BWE enabling their function. BW1 controls I/O0–I/O8 and I/OP1 (9 bits), and BW2 controls I/O9–I/OP2 (9 bits). Per datasheet note, BW3 and BW4 are not applicable for the 71V67903S80BQ8 - unlike the 71V67703 variant - making its byte-write granularity strictly dual-9-bit.

What is the role of the LBO pin on the 71V67903S80BQ8, and how does it affect burst behavior?

The LBO (Linear Burst Order) pin on the 71V67903S80BQ8 is an asynchronous static input that selects burst address sequencing: LBO = LOW enables linear order (0,1,2,3), while LBO = HIGH enables interleaved order (0,2,1,3). The 71V67903S80BQ8 requires LBO to remain stable during operation; changing it mid-burst causes undefined behavior. This feature allows alignment with specific processor cache-line layouts.

How does the 71V67903S80BQ8 achieve single-cycle deselect, and why is this important?

The 71V67903S80BQ8 achieves single-cycle deselect by driving all I/O pins to high-impedance within one CLK cycle after chip disable (CE/CS0/CS1 deasserted). This is implemented via synchronous output disable logic tied directly to chip-select decoding - no additional latency. It prevents bus contention in multi-SRAM systems and simplifies glue logic in high-density memory subsystems using the 71V67903S80BQ8.

What power-saving modes does the 71V67903S80BQ8 support, and what is the sleep current?

The 71V67903S80BQ8 supports two low-power states: CMOS standby (ISB1 = 70 mA, device deselected) and full sleep mode (IZZ = 70 mA, ZZ = HIGH). In sleep mode, the internal clock is gated, core logic is halted, and data retention is guaranteed across –40°C to +85°C. Unlike standby, sleep mode eliminates dynamic switching current - critical for intermittent-operation systems using the 71V67903S80BQ8.