Renesas 71V67903S80BQI

Overview

71V67903S80BQI from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and burst-mode operation. It supports 8.0 ns access time at up to 100 MHz clock frequency, operates across industrial temperature (–40°C to +85°C), and uses JEDEC-standard 100-pin TQFP packaging. It serves as high-speed buffer/cache memory in networking line cards and telecom baseband processors.

For engineers reviewing the 71V67903S80BQI datasheet, 71V67903S80BQI pinout, 71V67903S80BQI application, or 71V67903S80BQI equivalent, key selection criteria include burst order control via LBO, self-timed write with GW/BWE/BWx, flow-through output timing, ZZ sleep mode entry, and compatibility with 3.3V I/O systems requiring deterministic read latency.

Technical Context

The 71V67903S80BQI implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs - enabling predictable tCD = 8.0 ns clock-to-data delay. Its internal burst counter advances on ADV low and selects linear or interleaved sequence per LBO state, supporting four-word bursts per address.

Write operations are fully synchronous and support global (GW) or byte-level (BW1–BW2) control; BWE gates BWx signals, and CE/CS0/CS1 jointly enable chip selection. The device enters low-power sleep mode asynchronously via ZZ high, reducing supply current to ≤70 mA while retaining data.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked via corner notch; pin 14 is VSS-compatible (VIL < 0.8 V acceptable); pin 64 is NC and may float.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1372D-100AXC and AS7C3512PFS-10BIN, the 71V67903S80BQI uniquely combines industrial temperature support, ZZ sleep mode, and configurable linear/interleaved burst - making it optimal for thermally constrained, power-aware, high-throughput embedded systems where deterministic multi-word access is essential.

Availability

71V67903S80BQI is available at Aetrix Electronics and suitable for baseband processing, network packet buffering, and industrial motion control applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade reliability.

Supply support for 71V67903S80BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and interface solutions for communications, computing, and industrial markets.

The 71V67903S80BQI belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable buffering in telecom infrastructure, test equipment, and real-time control systems demanding deterministic timing and industrial environmental resilience.

FAQ

What is the maximum operating frequency supported by the 71V67903S80BQI?

The 71V67903S80BQI supports up to 100 MHz clock frequency, corresponding to a minimum clock cycle time (tCYC) of 10 ns and an access time of 8.0 ns. This rating is guaranteed over the full industrial temperature range (–40°C to +85°C) with VDD and VDDQ at 3.3 V ±5%. Operation beyond 100 MHz is not characterized or supported.

Does the 71V67903S80BQI support both linear and interleaved burst modes?

Yes, the 71V67903S80BQI supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input. When LBO is driven LOW, the device executes linear burst order; when LBO is HIGH, it executes interleaved burst order. LBO is a static configuration pin and must remain stable during operation - it is not sampled dynamically.

How many byte-write enable signals does the 71V67903S80BQI provide?

The 71V67903S80BQI provides two individual byte-write enable inputs: BW1 and BW2. BW1 controls I/O0–I/O8 and I/OP1 (9 bits); BW2 controls I/O9–I/O17 and I/OP2 (9 bits). Per documentation, BW3 and BW4 are not applicable to the 71V67903S80BQI - they are reserved for the 256K × 36 variant (71V67703).

What is the function of the ZZ pin on the 71V67903S80BQI?

The ZZ pin on the 71V67903S80BQI is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and places the device into full sleep mode, reducing supply current to ≤70 mA while guaranteeing data retention. ZZ requires no setup/hold timing relative to CLK and can be asserted at any time - no prior deselection or sequencing is needed.

Is the 71V67903S80BQI pin-compatible with the 71V67703 series?

No, the 71V67903S80BQI is not pin-compatible with the 71V67703 series. While both share the same 100-pin TQFP package, pin functions differ significantly: the 71V67903S80BQI omits BW3/BW4 and repurposes several pins (e.g., A10–A18 mapping differs), and its 512K × 18 organization uses fewer address lines than the 256K × 36 variant. PCB layout must be designed specifically for the 71V67903S80BQI.