Renesas 71V67903S80BQI8

Overview

71V67903S80BQI8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and burst-mode capability. It supports 8.0ns access time at up to 100MHz clock frequency, operates across –40°C to +85°C industrial temperature range, and uses JEDEC-standard 100-pin TQFP packaging. It serves as high-speed buffer/cache memory in telecom line cards and network packet processors.

For engineers reviewing the 71V67903S80BQI8 datasheet, 71V67903S80BQI8 pinout, 71V67903S80BQI8 application, or 71V67903S80BQI8 equivalent, this page delivers verified timing parameters, burst control logic behavior, industrial-grade power-down current (IZZ = 70mA), and precise pin-level functional mapping for PCB layout and system integration.

Technical Context

The 71V67903S80BQI8 implements a synchronous, flow-through architecture with no output register-data appears on I/O pins after tCD (≤8.0ns) from CLK rise. Its internal burst counter advances on ADV=LOW and selects linear or interleaved sequence via LBO, enabling four-word bursts per address cycle without external sequencing logic.

Write operations support global (GW) or byte-level (BW1–BW2) control with self-timed write cycles; BWE gates BWx inputs synchronously, and OE remains asynchronous for fast output disable. The device features dual supply rails (VDD = 3.3V ±5%, VDDQ = 3.3V ±5%) and ZZ-controlled sleep mode with guaranteed data retention.

Key Specifications

Pinout & Package

71V67903S80BQI8 is packaged in a 100-pin thin quad flatpack (TQFP), JEDEC MO-145AC, 14mm × 20mm body size, 0.5mm lead pitch. Pin functions are validated per IDT document 5309 (Rev. 6.42), specifically for the 512K × 18 configuration (PKG100).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-100BGXI and AS7C3512PFS-10BIN, the 71V67903S80BQI8 uniquely combines industrial temperature rating, programmable burst order (LBO), cache-controller interface (ADSC), and sub-70mA sleep current - making it optimal for thermally demanding, multi-protocol telecom infrastructure.

Availability

71V67903S80BQI8 is available at Aetrix Electronics and suitable for telecom line card buffering, network packet processor cache, industrial PLC data logging, and radar signal processing FIFO applications requiring stable component supply across extended product lifecycles.

Supply support for 71V67903S80BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71V67903S80BQI8 belongs to IDT's 71V67xxx family of synchronous SRAMs, designed specifically for low-latency, burst-capable memory subsystems in carrier-grade networking and real-time embedded systems.

FAQ

What is the maximum clock frequency supported by the 71V67903S80BQI8?

The 71V67903S80BQI8 supports up to 100MHz clock frequency with an 8.0ns access time specification. This is validated across the full industrial temperature range (–40°C to +85°C) and under worst-case voltage conditions (VDD = 3.135V). The device meets timing at 100MHz only when operating in its specified 512K × 18 configuration with proper setup/hold margins on all synchronous inputs relative to CLK.

Does the 71V67903S80BQI8 support both linear and interleaved burst modes?

Yes, the 71V67903S80BQI8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, linear burst order is selected; when LBO = HIGH, interleaved burst order is selected. This selection is static and must remain stable during device operation - toggling LBO mid-burst may cause undefined address sequencing.

How many byte write enable signals are active in the 71V67903S80BQI8 512K × 18 configuration?

In the 512K × 18 configuration, only BW1 and BW2 are functional on the 71V67903S80BQI8; BW3 and BW4 are not applicable per IDT documentation (Note 1, Pin Description Summary). BW1 controls I/O0–I/O8 and I/OP1 (9 bits), and BW2 controls I/O9–I/O17 and I/OP2 (9 bits), fully covering the 18-bit data + 2-bit parity bus.

What is the purpose of the ADSP and ADSC pins on the 71V67903S80BQI8?

ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are independent synchronous address latch-enable inputs on the 71V67903S80BQI8. ADSP is gated by CE and used to load the address register from a CPU; ADSC operates independently and allows cache controllers to drive addresses without CPU involvement - enabling concurrent CPU and cache access in tightly coupled memory subsystems.

Can the 71V67903S80BQI8 retain data during ZZ sleep mode?

Yes, the 71V67903S80BQI8 guarantees data retention during ZZ sleep mode. When ZZ is driven HIGH, the internal clock is gated and core logic enters ultra-low-power state while maintaining SRAM cell contents. Data retention is specified across the full industrial temperature range (–40°C to +85°C) with IZZ ≤ 70mA at VDD = max, and requires no external refresh or backup power.