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Renesas 71V67903S85BG

Name: 71V67903S85BG
Brand: Renesas
SKU: 71V67903S85BG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67903S85BG

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V67903S85BG.pdf

Description:: IC SRAM 9MBIT PAR 87MHZ 119PBGA

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Product details

Overview

71V67903S85BG from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It supports 8.5ns access time at up to 87MHz clock frequency, operates across industrial temperature (–40°C to +85°C), and features self-timed write with global and byte-level write control. It is used in high-speed networking buffers and packet processing ASIC/FPGA interfaces.

For engineers reviewing the 71V67903S85BG datasheet, 71V67903S85BG pinout, 71V67903S85BG application, or 71V67903S85BG equivalent, key selection criteria include burst address sequencing (LBO-controlled), 100-pin TQFP package compatibility, flow-through output timing, ZZ sleep mode behavior, and absence of BW3/BW4 pins per datasheet note.

Technical Context

The 71V67903S85BG implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs-enabling deterministic read latency without output register delay. Its internal burst counter advances on ADV assertion and selects sequence order via LBO pin state (linear vs. interleaved).

Write operations support multiple modes: global write (GW), byte write enable (BWE) gating four independent byte lanes (BW1–BW4), and asynchronous sleep entry via ZZ. Notably, BW3 and BW4 are not applicable for this 512K×18 variant, distinguishing it from the 256K×36 71V67703 family member.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18-bit (9Mbit total); configured as 18-bit-wide data bus with A0–A18 addressing.
Access Time / Max Frequency	8.5ns access time; supports up to 87MHz clock frequency with guaranteed timing margins.
Supply Voltages	3.3V ±5% core (VDD) and I/O (VDDQ); separate power domains enable noise isolation.
Burst Mode Control	LBO pin selects linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst sequence; static configuration.
Power Management	ZZ input enables full sleep mode with ≤70mA standby current (industrial grade); asynchronous entry/exit.
Operating Temperature	Industrial range: –40°C to +85°C; validated for sustained operation under thermal stress.
Output Architecture	Flow-through outputs: data appears after tCD (≤8.5ns) from CLK rise-no output register delay.

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pin 1 marked by corner notch; top-side marking includes "71V67903S85BG" and date code.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous address latching on rising CLK edge when ADSP or ADSC asserted; 19-bit address space for 512K×18.
CLK	System Clock Input	Primary timing reference; all synchronous inputs sampled on rising edge; no internal clock division.
CE, CS0, CS1	Chip Enable / Selects	Three-input chip select logic: CE=LOW, CS0=HIGH, CS1=LOW required for device activation.
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 18-bit write; BWE gates BW1–BW4; BW3/BW4 are NC for 71V67903 (per datasheet note).
ADV, ADSP, ADSC, LBO	Burst & Address Control	ADV advances burst counter; ADSP/ADSC load address register; LBO sets burst order (static, must not toggle during operation).
OE	Asynchronous Output Enable	Drives I/O pins to high-Z when HIGH; enables flow-through data output when LOW (independent of CLK).
ZZ	Asynchronous Sleep Input	Asserting ZZ=HIGH disables internal clock and reduces ICC to ≤70mA; retains data without refresh.
I/O0–I/O17, I/OP1–I/OP2	Data I/O Pins	18 data bits + 2 parity bits; registered input path, flow-through output path; VDDQ-referenced I/O.

Key Features

Feature	Design Value
Single-cycle deselect	Device enters high-impedance output state within one CLK cycle upon deactivation-critical for bus sharing in multi-master systems.
Self-timed write cycle	Internal timing logic eliminates external write pulse generation; GW or BWx assertion triggers automatic write completion.
Flow-through output architecture	Zero-output-register latency ensures tCD ≤ 8.5ns from CLK edge-enables tight timing closure in FPGA-attached memory subsystems.
Configurable burst order	LBO pin statically selects linear (00→01→10→11) or interleaved (00→01→11→10) address sequence-matches CPU cache line layouts.
Industrial-grade sleep mode	ZZ-controlled sleep draws ≤70mA at +85°C while retaining full memory content-supports low-power idle states in telecom line cards.

Applications

Network Packet Buffer	FPGA Co-Processor Cache
Use Scenario: Temporary storage of variable-length Ethernet frames in Layer 2 switch ASICs before forwarding decision. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to MAC controller's 18-bit parallel bus. Use Value: 8.5ns tCD and single-cycle deselect minimize frame queuing delay; flow-through outputs align with FPGA register stages.	Use Scenario: Instruction/data scratchpad for Xilinx Kintex FPGA-based real-time signal processing engine. IC Role / Device Role / Timing Role: Synchronous burst-access memory mapped to FPGA's AXI HP port with custom bridge logic. Use Value: LBO-configurable burst order matches FPGA cache line stride; ZZ sleep reduces system idle power by >40%.
Telecom Line Card FIFO	Industrial PLC Data Logger
Use Scenario: Asynchronous-to-synchronous protocol converter buffering T1/E1 framing data between DSP and backplane interface. IC Role / Device Role / Timing Role: Dual-port emulated via CE/ADV timing; handles 87MHz burst reads while accepting slower writes. Use Value: Industrial temp rating (–40°C to +85°C) ensures reliability in uncooled chassis; 100-pin TQFP simplifies PCB routing.	Use Scenario: Cyclic data acquisition buffer in DIN-rail mounted PLC capturing sensor values at 10kHz sample rate. IC Role / Device Role / Timing Role: Local memory for ARM Cortex-M7 co-processor; accessed via parallel bus with burst reads for block transfers. Use Value: Self-timed write eliminates external write strobe logic; ZZ sleep extends battery backup runtime during mains outage.

Network Packet Buffer

FPGA Co-Processor Cache

Use Scenario: Temporary storage of variable-length Ethernet frames in Layer 2 switch ASICs before forwarding decision.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to MAC controller's 18-bit parallel bus.

Use Value: 8.5ns tCD and single-cycle deselect minimize frame queuing delay; flow-through outputs align with FPGA register stages.

Use Scenario: Instruction/data scratchpad for Xilinx Kintex FPGA-based real-time signal processing engine.

IC Role / Device Role / Timing Role: Synchronous burst-access memory mapped to FPGA's AXI HP port with custom bridge logic.

Use Value: LBO-configurable burst order matches FPGA cache line stride; ZZ sleep reduces system idle power by >40%.

Telecom Line Card FIFO

Industrial PLC Data Logger

Use Scenario: Asynchronous-to-synchronous protocol converter buffering T1/E1 framing data between DSP and backplane interface.

IC Role / Device Role / Timing Role: Dual-port emulated via CE/ADV timing; handles 87MHz burst reads while accepting slower writes.

Use Value: Industrial temp rating (–40°C to +85°C) ensures reliability in uncooled chassis; 100-pin TQFP simplifies PCB routing.

Use Scenario: Cyclic data acquisition buffer in DIN-rail mounted PLC capturing sensor values at 10kHz sample rate.

IC Role / Device Role / Timing Role: Local memory for ARM Cortex-M7 co-processor; accessed via parallel bus with burst reads for block transfers.

Use Value: Self-timed write eliminates external write strobe logic; ZZ sleep extends battery backup runtime during mains outage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1373KV18	512K×18, 3.3V, 7.5ns access, 165-ball fBGA only; no TQFP option; supports QDR-II+ dual-clock mode.	Requires PCB redesign for BGA; better suited for high-density, multi-GHz systems where QDR timing is needed.	Select if migrating to higher-frequency designs requiring dual-data-rate capability and can accommodate BGA layout.
AS7C35128P	512K×18, 3.3V, 10ns access, 100-pin TQFP; no burst mode, no ZZ sleep, no LBO/ADV control.	Lacks burst addressing and power management-suitable only for simple static RAM replacement with relaxed timing.	Choose only for cost-sensitive, non-burst, non-low-power legacy upgrades where 10ns access suffices and feature reduction is acceptable.

Compared with CY7C1373KV18 and AS7C35128P, the 71V67903S85BG uniquely balances industrial TQFP packaging, configurable burst addressing, and low-power sleep-making it optimal for upgrade paths in existing 100-pin designs requiring enhanced throughput and power control.

Availability

71V67903S85BG is available at Aetrix Electronics and suitable for network packet buffers, FPGA co-processor caches, and industrial PLC data loggers requiring stable component supply, long-term lifecycle support, and industrial temperature compliance.

Supply support for 71V67903S85BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, analog, and embedded processing solutions for communications, computing, and industrial markets.

The 71V67903S85BG belongs to IDT's high-speed synchronous SRAM product line, engineered for low-latency, burst-capable memory subsystems in networking infrastructure and real-time embedded systems.

FAQ

What is the maximum operating frequency supported by the 71V67903S85BG?

The 71V67903S85BG supports up to 87MHz clock frequency, corresponding to its 8.5ns access time specification. This is validated across the full industrial temperature range (–40°C to +85°C) with 3.3V ±5% supplies and meets all AC timing parameters in Table 16 of the datasheet.

Does the 71V67903S85BG support both linear and interleaved burst modes?

Yes, the 71V67903S85BG supports both burst modes via the LBO pin: LBO = LOW selects linear order (00→01→10→11), and LBO = HIGH selects interleaved order (00→01→11→10). The LBO input is static and must remain stable during device operation.

Are BW3 and BW4 functional on the 71V67903S85BG?

No-BW3 and BW4 are not applicable for the 71V67903S85BG, as confirmed in the datasheet Pin Description Summary (Note 1, page 3) and Pin Configuration diagrams (pages 5 and 6). These pins are No Connect (NC) for the 512K×18 configuration.

What is the purpose of the ZZ pin on the 71V67903S85BG?

The ZZ pin on the 71V67903S85BG enables asynchronous full sleep mode: asserting ZZ = HIGH gates the internal clock and reduces supply current to ≤70mA (industrial grade) while retaining all stored data. Recovery requires tZZR ≥ 100ns after ZZ returns LOW.

Which package type does the 71V67903S85BG use, and what are its key mechanical features?

The 71V67903S85BG uses a JEDEC-standard 100-pin thin quad flatpack (TQFP) with 14mm × 20mm body size and 0.5mm lead pitch. It features exposed thermal pad (not electrically connected), RoHS-compliant finish, and industrial-grade reflow profile compatibility.

71V67903S85BG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: 87 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 8.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V67903S85BG FAQ

1.How can I place an order for 71V67903S85BG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67903S85BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67903S85BG reliable?

The price and inventory of 71V67903S85BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S85BG is usually 5 days.

3.What payment methods are accepted for 71V67903S85BG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67903S85BG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V67903S85BG?

71V67903S85BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67903S85BG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67903S85BG?

For technical support, including 71V67903S85BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S85BG requirements.

6.How does Aetrix verify that 71V67903S85BG is sourced from the original manufacturer or authorized distributors?

All 71V67903S85BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S85BG meets industry standards.

7.What is the process for return or replacement of 71V67903S85BG?

All 71V67903S85BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S85BG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67903S85BG part is unused and in its original packaging.

Return procedure for 71V67903S85BG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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