My Inquiry
My Account
Renesas 71V67903S85BG8
- Part No.:
- 71V67903S85BG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67903S85BG8.pdf
- Description:
- IC SRAM 9MBIT PAR 87MHZ 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,090
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V67903S85BG8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It supports 8.5 ns access time at up to 87 MHz clock frequency, operates across industrial temperature (–40°C to +85°C), and uses JEDEC-standard 119-ball BGA packaging. It serves as high-speed buffer memory in network packet processors and telecom line cards.
For engineers reviewing the 71V67903S85BG8 datasheet, 71V67903S85BG8 pinout, 71V67903S85BG8 application, or 71V67903S85BG8 equivalent, key selection criteria include burst address sequencing control via LBO, self-timed write with GW/BWE/BWx, flow-through output timing, ZZ-controlled sleep mode, and compatibility with 3.3V I/O systems requiring deterministic read latency.
Technical Context
The 71V67903S85BG8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs - enabling predictable tCD = 8.5 ns clock-to-data delay. Its internal burst counter advances on ADV assertion and selects sequence order (linear vs. interleaved) via static LBO configuration.
Burst operation delivers four consecutive 18-bit words per address cycle; write control supports global (GW) or byte-level (BW1–BW2 only - BW3/BW4 are not applicable per datasheet note) enables with asynchronous OE and ZZ sleep entry. The device requires no external timing logic for self-timed writes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9 Mbit); supports 3.3V I/O and core supply with separate VDD/VDDQ rails. |
| Access Time / Max Frequency | 8.5 ns access time; supports up to 87 MHz clock frequency with guaranteed timing margins. |
| Burst Mode | Four-word burst with programmable linear or interleaved sequence controlled by LBO pin. |
| Output Architecture | Flow-through (no output register); eliminates output clock-to-data skew for deterministic read timing. |
| Power Management | Asynchronous ZZ input enables full sleep mode with IZZ ≤ 70 mA (industrial grade). |
| Operating Temperature | Industrial range: –40°C to +85°C; validated for sustained operation under thermal stress. |
| Package | 119-ball BGA (BG119), JEDEC-compliant, 12 mm × 12 mm footprint. |
Pinout & Package
71V67903S85BG8 is packaged in a JEDEC-standard 119-ball grid array (BG119) with 0.8 mm ball pitch, designed for high-density PCB layouts and thermal reliability in industrial environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADSP or ADSC is asserted. |
| CLK | Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; drives internal registers and burst counter. |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input chip selection logic; CE active low, CS0 active high, CS1 active low - enables hierarchical decoding. |
| GW, BWE, BW1–BW2 | Write Control | Global Write (GW) overrides byte enables; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2. |
| OE | Output Enable | Asynchronous enable; drives I/O pins to high-Z when HIGH, regardless of clock state. |
| LBO | Burst Order Select | Static DC input; LOW = linear burst, HIGH = interleaved burst; must remain stable during operation. |
| ZZ | Sleep Mode | Asynchronous sleep entry; HIGH disables internal clock and reduces current to ≤70 mA (industrial). |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional data bus + 2 parity bits; synchronous input path, flow-through output path. |
Key Features
| Feature | Design Value |
|---|---|
| Single-Cycle Deselect | Device enters high-impedance output state within one clock cycle after deselection - critical for bus sharing in multi-master systems. |
| Self-Timed Write Cycle | Internal timing logic eliminates need for external write pulse generation; simplifies controller interface and improves timing margin. |
| Flow-Through Outputs | Zero-cycle output register removes clock-to-output uncertainty - enables precise timing alignment in high-speed datapaths. |
| Linear/Interleaved Burst Selection | LBO pin configures burst address sequence to match cache line ordering requirements (e.g., CPU vs. DSP memory access patterns). |
| Separate VDD/VDDQ Supplies | Independent 3.3V core and I/O rails reduce noise coupling and support mixed-voltage system integration. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly with MAC controllers and traffic managers. Use Value: 8.5 ns tCD and flow-through outputs ensure frame header reads complete within one clock cycle - reducing pipeline stalls in 10 Gbps+ switching fabrics. | Use Scenario: Holding voice/data payload in TDM-over-IP gateways and SDH/SONET add-drop multiplexers. IC Role / Device Role / Timing Role: Synchronous burst memory supporting deterministic access for time-sensitive voice sample buffering. Use Value: Linear burst mode aligns with sequential TDM slot addressing; ZZ sleep mode cuts power during idle periods without losing data retention. |
| Baseband Processor Cache | Radar Signal Processing Buffer |
Use Scenario: Acting as L2 instruction/data cache for FPGA-based baseband processors in 4G/LTE radio units. IC Role / Device Role / Timing Role: High-speed SRAM providing parallel access to convolutional decoder and FFT engines. Use Value: 512K × 18 organization matches 16-bit/18-bit datapath widths; 87 MHz clock rate sustains >1.5 Gbps sustained bandwidth. | Use Scenario: Capturing and staging digitized RF samples in pulsed radar receivers prior to FFT processing. IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory for real-time signal capture pipelines. Use Value: Single-cycle deselect prevents bus contention during rapid acquisition bursts; industrial temp rating ensures reliability in outdoor radar enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-85BAXI | 512K × 18, 3.3V, 85 MHz max, 119-ball BGA; no LBO pin - fixed linear burst only. | Lacks configurable burst order; requires redesign if interleaved addressing is needed. | Select when burst sequence is fixed and cost sensitivity outweighs flexibility. |
| AS7C35128P-85BIN | 512K × 18, 3.3V, 85 MHz max, 100-pin TQFP; no ZZ sleep mode; higher ISB1 (120 mA vs. 70 mA). | Higher standby power and larger footprint; unsuitable for thermally constrained or battery-backed systems. | Select only for legacy TQFP-compatible designs where BGA rework is prohibitive. |
Compared with CY7C1371BV33-85BAXI and AS7C35128P-85BIN, the 71V67903S85BG8 uniquely combines LBO-configurable burst sequencing, ZZ-enabled ultra-low-power sleep, and flow-through output determinism - making it optimal for next-generation telecom and radar systems demanding both performance and power efficiency.
Availability
71V67903S85BG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and radar signal processing applications requiring stable component supply, long-term industrial-grade availability, and RoHS-compliant packaging.
Supply support for 71V67903S85BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, microcontrollers, and analog/power solutions for industrial, automotive, and communications markets.
The 71V67903S85BG8 belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic timing, low-power sleep, and burst-mode efficiency in infrastructure equipment requiring reliable, high-bandwidth memory interfaces.
FAQ
What is the maximum operating frequency supported by the 71V67903S85BG8?
The 71V67903S85BG8 supports up to 87 MHz clock frequency, corresponding to its 8.5 ns access time specification. This is validated across the industrial temperature range (–40°C to +85°C) with 3.3V ±5% supplies. Timing compliance requires adherence to setup/hold windows defined in Table 16 of the datasheet, including tSA = 2 ns and tHA = 0.5 ns.
Does the 71V67903S85BG8 support byte-level write control?
Yes, the 71V67903S85BG8 supports byte-level writes using BW1 and BW2 inputs. BW1 controls I/O0–I/O8 and I/OP1 (9 bits), while BW2 controls I/O9–I/O17 and I/OP2 (9 bits). Per datasheet Note 1 in Table 11, BW3 and BW4 are not applicable for this part - confirming dual-byte granularity only.
How does the LBO pin affect burst addressing in the 71V67903S85BG8?
The LBO pin statically selects burst address order: LOW enables linear sequence (00→01→10→11), HIGH enables interleaved (00→01→11→10). As stated in Tables 14–15, LBO must remain stable during operation - it is not sampled dynamically. This allows matching to specific processor cache line layouts without runtime reconfiguration.
What is the power consumption of the 71V67903S85BG8 in sleep mode?
In full sleep mode (ZZ > VHD), the 71V67903S85BG8 draws ≤70 mA supply current (ISB2) under industrial conditions, per Table 9. This represents a >60% reduction versus active-mode IDD (190–210 mA), while guaranteeing data retention. No external refresh or backup power is required during ZZ sleep.
Is the 71V67903S85BG8 pin-compatible with the 71V67703 series?
No - the 71V67903S85BG8 (512K × 18) and 71V67703 (256K × 36) differ in memory organization, pin function allocation, and ball mapping. For example, 71V67903 uses A0–A17 (18 address lines) and omits BW3/BW4, while 71V67703 uses A0–A18 and supports all four byte enables. Their BG119 footprints are mechanically identical but electrically incompatible.
71V67903S85BG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67903S85BG8 FAQ
1.How can I place an order for 71V67903S85BG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67903S85BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67903S85BG8 reliable?
The price and inventory of 71V67903S85BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S85BG8 is usually 5 days.
3.What payment methods are accepted for 71V67903S85BG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67903S85BG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V67903S85BG8?
71V67903S85BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67903S85BG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67903S85BG8?
For technical support, including 71V67903S85BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S85BG8 requirements.
6.How does Aetrix verify that 71V67903S85BG8 is sourced from the original manufacturer or authorized distributors?
All 71V67903S85BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S85BG8 meets industry standards.
7.What is the process for return or replacement of 71V67903S85BG8?
All 71V67903S85BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S85BG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67903S85BG8 part is unused and in its original packaging.
Return procedure for 71V67903S85BG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67903S85BG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
