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Renesas 71V67903S85BQ
- Part No.:
- 71V67903S85BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67903S85BQ.pdf
- Description:
- IC SRAM 9MBIT PAR 87MHZ 165CABGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V67903S85BQ from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It supports 8.5 ns access time at up to 87 MHz clock frequency, operates across industrial temperature (–40°C to +85°C), and features self-timed write with global and byte-level write control. It is used in high-bandwidth networking buffers and real-time DSP memory subsystems.
For engineers reviewing the 71V67903S85BQ datasheet, 71V67903S85BQ pinout, 71V67903S85BQ application, or 71V67903S85BQ equivalent, key selection criteria include burst address sequencing (LBO-controlled), flow-through output timing, 100-pin TQFP package compatibility, and industrial-grade power-down (ZZ) behavior under asynchronous sleep control.
Technical Context
The 71V67903S85BQ implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs - enabling deterministic read latency without output register delay. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO, supporting both linear and interleaved 4-word bursts per address.
Write operations are fully synchronous and support multiple modes: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW2); BW3/BW4 are not applicable per datasheet note. Power management includes ZZ-controlled full-sleep mode (IZZ ≤ 70 mA) and chip-deselect standby (ISB1 ≤ 70 mA), with VDD/VDDQ decoupling required for stable 3.3V core/I/O operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (998,400 bits); configured as 18-bit wide data bus with A0–A18 addressing. |
| Access Time / Max Frequency | 8.5 ns access time; supports up to 87 MHz clock frequency - defines minimum tCYC = 11.5 ns. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate supplies allow I/O voltage domain isolation. |
| Burst Mode Control | LBO input selects linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst sequence; static configuration, no runtime change. |
| Write Architecture | Self-timed write with GW (global), BWE (byte gate), and BW1/BW2 (byte-selects); BW3/BW4 not implemented on 71V67903. |
| Output Architecture | Flow-through (unregistered) outputs - data appears at I/O pins within tCD ≤ 8.5 ns after CLK rising edge, no output register delay. |
| Power-Down Mode | Asynchronous ZZ input enables full-sleep mode (IZZ ≤ 70 mA); internal clock gating preserves data retention. |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated for 512K × 18 configuration (PKG100) per datasheet Figure 5 (drw 02b) and Table 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge when ADSP/ADSC active; A17/A18 used for 512K×18 addressing. |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input chip selection logic: CE (active LOW), CS0 (active HIGH), CS1 (active LOW); all must meet setup/hold to CLK. |
| GW, BWE, BW1, BW2 | Write Control Inputs | GW enables full 18-bit write; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2. |
| ADV, ADSP, ADSC, LBO | Burst & Address Control | ADV (burst advance), ADSP/ADSC (address status), LBO (burst order) - all synchronous except LBO (asynchronous static config). |
| CLK, OE, ZZ | Timing & Control | CLK drives all synchronous registers; OE (asynchronous) enables/disables outputs; ZZ (asynchronous) enters full-sleep mode. |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional data bus + 2 parity bits; flow-through output path; input path registered on CLK rising edge. |
| VDD, VDDQ, VSS | Power & Ground | VDD (3.3V core), VDDQ (3.3V I/O), VSS (common ground); requires local decoupling per supply pin group. |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - tCD ≤ 8.5 ns directly from CLK edge, critical for tight-timing pipeline interfaces. |
| Single-cycle deselect | Device transitions to high-Z output state within one CLK cycle after deselection, minimizing bus contention in multi-SRAM systems. |
| Configurable burst order (LBO) | LBO pin statically selects linear or interleaved 4-word burst sequence - matches processor cache line ordering requirements. |
| Industrial temperature range | Rated –40°C to +85°C with guaranteed AC/DC specs - suitable for base station, industrial controller, and automotive infotainment memory buffers. |
| Low-power sleep mode (ZZ) | Asynchronous ZZ input reduces ICC to ≤70 mA while retaining data - enables rapid wake-up without reinitialization. |
Applications
| Networking Packet Buffer | DSP Real-Time Memory |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-speed, low-latency buffer memory interfacing directly with MAC and switch fabric logic. Use Value: 8.5 ns tCD and flow-through outputs ensure sub-10 ns read response; burst mode delivers four 18-bit words per address for efficient frame payload access. |
Use Scenario: Holding coefficient tables and intermediate results in fixed-point DSP algorithms running at >80 MHz. IC Role / Device Role / Timing Role: Synchronous SRAM acting as zero-wait-state program/data memory for TI C6000- or Analog Devices SHARC-based engines. Use Value: Single-cycle deselect prevents bus turnaround delays; industrial temp rating ensures reliability in fanless embedded enclosures. |
| Industrial PLC Data Cache | Medical Imaging Frame Store |
|
Use Scenario: Caching sensor fusion data and motion control command queues in programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: Deterministic-access memory for real-time I/O scanning and closed-loop servo updates. Use Value: ZZ sleep mode reduces system idle power by >60% vs. active standby; VDD/VDDQ separation simplifies mixed-signal PCB layout. |
Use Scenario: Temporary storage of uncompressed ultrasound or MRI scan lines before compression and transfer to host memory. IC Role / Device Role / Timing Role: Burst-capable frame buffer bridging high-speed ADCs and FPGA-based preprocessing pipelines. Use Value: Linear burst mode (LBO = LOW) aligns with raster-scan memory access patterns; 100-pin TQFP allows dense, thermally manageable placement near FPGAs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-85BAXI | 512K × 18, 3.3V, 85 MHz, 8.5 ns; same TQFP-100 package; supports QDR-II interface (dual-clock), not flow-through. | Requires dual-clock domain design; incompatible with single-clock flow-through timing models. | Select only if QDR-II protocol and higher bandwidth (bidirectional reads/writes per cycle) are required over strict tCD determinism. |
| AS7C35128P-85TIN | 512K × 18, 3.3V, 85 MHz, 8.5 ns; TQFP-100; no LBO or ADV pins - fixed linear burst only; no ZZ sleep mode. | Lacks configurable burst order and hardware sleep control - limits use in power-constrained or cache-coherent designs. | Prefer where simplified control interface suffices and thermal/power headroom permits continuous operation. |
Compared with CY7C1371DV33-85BAXI and AS7C35128P-85TIN, the 71V67903S85BQ uniquely combines flow-through timing determinism, LBO-configurable burst order, and asynchronous ZZ sleep - making it optimal for latency-critical, power-aware, single-clock synchronous systems.
Availability
71V67903S85BQ is available at Aetrix Electronics and suitable for networking packet buffers, DSP real-time memory, industrial PLC data caches, and medical imaging frame stores requiring stable component supply across extended product lifecycles.
Supply support for 71V67903S85BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, analog, and embedded processing solutions for communications, industrial, and automotive markets.
The 71V67903S85BQ belongs to IDT's legacy high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in telecom infrastructure and real-time embedded control.
FAQ
What memory organization does the 71V67903S85BQ support?
The 71V67903S85BQ is organized as 512K × 18 bits (998,400 total bits), using address lines A0–A18. It is distinct from the 256K × 36 variant (71V67703) - pin-compatible in TQFP but with different address and data pin mappings. The 71V67903S85BQ does not support 256K × 36 mode.
Does the 71V67903S85BQ support byte write functionality?
Yes, the 71V67903S85BQ supports byte-level writes via BW1 and BW2 inputs, each controlling a 9-bit segment (BW1: I/O0–I/O8/I/OP1; BW2: I/O9–I/O17/I/OP2). BW3 and BW4 are not applicable per datasheet Note 1 in Table 1 - they are NC on this variant.
How does the LBO pin affect burst behavior in the 71V67903S85BQ?
The LBO pin selects burst order: LOW enables linear sequence (00→01→10→11), HIGH enables interleaved (00→01→11→10). It is an asynchronous static input - must be stable during operation and cannot be toggled mid-burst. The 71V67903S85BQ implements this per Tables 14 and 15 in the datasheet.
What is the role of the ZZ pin in the 71V67903S85BQ?
The ZZ pin places the 71V67903S85BQ into full-sleep mode when driven HIGH, reducing ICC to ≤70 mA while retaining memory contents. It operates asynchronously - no CLK dependency - and requires tZZR ≥ 100 ns recovery before next access. This feature is confirmed in Table 9 and Truth Table 13.
Is the 71V67903S85BQ compatible with industrial temperature operation?
Yes, the 71V67903S85BQ is rated for industrial temperature range (–40°C to +85°C) with fully guaranteed AC and DC specifications, including tCD ≤ 8.5 ns and IDD ≤ 210 mA at 87 MHz. This is explicitly stated in Table 4 and supported across all timing tables (e.g., Table 16).
71V67903S85BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67903S85BQ FAQ
1.How can I place an order for 71V67903S85BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67903S85BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67903S85BQ reliable?
The price and inventory of 71V67903S85BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S85BQ is usually 5 days.
3.What payment methods are accepted for 71V67903S85BQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67903S85BQ transactions.
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4.How is shipping managed for 71V67903S85BQ?
71V67903S85BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67903S85BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67903S85BQ?
For technical support, including 71V67903S85BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S85BQ requirements.
6.How does Aetrix verify that 71V67903S85BQ is sourced from the original manufacturer or authorized distributors?
All 71V67903S85BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S85BQ meets industry standards.
7.What is the process for return or replacement of 71V67903S85BQ?
All 71V67903S85BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S85BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67903S85BQ part is unused and in its original packaging.
Return procedure for 71V67903S85BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67903S85BQ Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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