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Renesas 71V67903S85BQ8
- Part No.:
- 71V67903S85BQ8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67903S85BQ8.pdf
- Description:
- IC SRAM 9MBIT PAR 87MHZ 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,535
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Product details
Overview
71V67903S85BQ8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It supports 8.5 ns access time at up to 87 MHz clock frequency, operates across industrial temperature range (–40°C to +85°C), and features self-timed write with global and byte-level write control - used in high-speed networking packet buffers and FPGA co-processor memory subsystems.
For engineers reviewing the 71V67903S85BQ8 datasheet, 71V67903S85BQ8 pinout, 71V67903S85BQ8 application, or 71V67903S85BQ8 equivalent, key selection criteria include burst address sequencing (LBO-controlled), 3.3V I/O compatibility, TQFP-100 packaging, ZZ sleep-mode power management, and absence of BW3/BW4 pins per device-specific pinout.
Technical Context
The 71V67903S85BQ8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but flow-through (unregistered) data outputs - enabling zero-latency read output after tCD delay. Its internal burst counter advances on ADV assertion and selects sequence order via LBO pin state (linear vs. interleaved).
Write operations are fully synchronous and support four modes: global write (GW), byte write enable (BWE) gated, individual byte writes (BW1–BW4), and self-timed completion. The device uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies, with ZZ input enabling asynchronous deep-sleep mode (<70 µA ISB2 current).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9 Mbit); configured as 18-bit wide data bus with A0–A18 addressing |
| Access Time / Max Frequency | 8.5 ns / 87 MHz - defines minimum clock cycle (tCYC = 11.5 ns) for guaranteed timing compliance |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - requires independent decoupling for noise isolation |
| Burst Mode Control | LBO pin selects linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst sequence - static configuration, no runtime change |
| Power-Down Current | IZZ = 50–70 mA (industrial grade) in full sleep mode (ZZ = HIGH) - enables low-power standby in idle cycles |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded systems with thermal cycling requirements |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm) - surface-mount compatible with standard reflow profiles |
Pinout & Package
71V67903S85BQ8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V67903S85BQ8" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latch inputs; A0/A1 define burst word offset; A18 used only in 512K×18 mode |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input chip select logic: CE (active LOW), CS0 (active HIGH), CS1 (active LOW) - enables hierarchical decoding |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 18-bit write; BWE gates BWx; BW1–BW2 control I/O[0:8]/I/O[9:17]; BW3/BW4 not connected (NC) per datasheet note |
| CLK, ADV, ADSP, ADSC | Burst Timing & Address Strobe | CLK drives all registers; ADV advances burst counter; ADSP/ADSC load address register on falling edge (synchronous to CLK) |
| OE, ZZ, LBO | Output & Mode Control | OE (asynchronous) enables flow-through outputs; ZZ (asynchronous) forces sleep mode; LBO (DC) sets burst order - must be stable during operation |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional data bus + 2 parity bits; synchronous input registration, flow-through output path - no output register latency |
| VDD, VDDQ, VSS | Power & Ground | VDD (core), VDDQ (I/O), and multiple VSS pins - require local 0.1 µF + bulk decoupling per supply domain |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - data appears on I/O pins within tCD (≤8.5 ns) after CLK rise, critical for pipelined bus protocols |
| Single-cycle deselect | Device enters high-Z output state within one clock cycle of CE/CS deassertion - prevents bus contention in multi-SRAM systems |
| Self-timed write cycle | Internal timing logic completes write without external wait-state generation - simplifies controller interface and reduces firmware overhead |
| Linear/interleaved burst mode | LBO-selectable 4-word burst sequence matches CPU cache line or DMA engine alignment requirements - configurable per board design |
| Asynchronous ZZ sleep mode | Reduces ICC to ≤70 mA while preserving data - enables dynamic power gating in burst-idle intervals without software intervention |
Applications
| Networking Packet Buffer | FPGA Co-Processor Memory |
|---|---|
|
Use Scenario: Temporary storage of variable-length Ethernet frames in Layer 2 switch ASICs before forwarding decision. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to MAC controller and traffic manager logic. Use Value: 8.5 ns access + flow-through outputs enable back-to-back frame reads at line rate (1 Gbps+); burst mode aligns with 64-byte cache lines. |
Use Scenario: Off-chip instruction/data memory for Xilinx Kintex or Intel Arria FPGA-based real-time signal processing engines. IC Role / Device Role / Timing Role: Synchronous memory subsystem supporting dual-port-like burst access via ADV/LBO-controlled addressing. Use Value: Single-cycle deselect and 87 MHz clock allow tight coupling with FPGA fabric; industrial temp rating ensures reliability in sealed enclosures. |
| Industrial PLC Data Logging | Medical Imaging Frame Store |
|
Use Scenario: Cyclic buffering of sensor telemetry (voltage, temperature, vibration) sampled at 10 kHz for edge analytics. IC Role / Device Role / Timing Role: Deterministic-access memory mapped to microcontroller's external bus interface with burst prefetch capability. Use Value: ZZ sleep mode cuts idle power by >90% between sampling intervals; –40°C to +85°C rating supports uncooled cabinet deployment. |
Use Scenario: Real-time buffering of 12-bit ultrasound echo data streams prior to FFT processing in portable diagnostic devices. IC Role / Device Role / Timing Role: Low-jitter, flow-through SRAM ensuring precise sample-to-sample timing integrity across 4-word burst transfers. Use Value: tCD ≤8.5 ns and tCDC = 2 ns minimize inter-sample skew; VDD/VDDQ separation prevents analog noise coupling into imaging chain. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-85BGXI | 512K × 18-bit, 85 MHz, 3.3V, 119-ball BGA package - no TQFP option; supports JTAG boundary scan | Requires PCB redesign for BGA layout and reflow; lacks ZZ sleep mode - higher standby power | Select when board space is constrained and JTAG testability is required; not drop-in compatible due to package and feature set |
| AS7C35128P-85JCIN | 512K × 18-bit, 85 MHz, 3.3V, 100-pin TQFP - identical footprint but no LBO or ADV pins; fixed linear burst only | No interleaved burst support; simplified control interface but less flexible for cache-line-matching designs | Choose for cost-sensitive industrial controllers where burst order is fixed and ZZ sleep is unnecessary |
Compared with CY7C1371BV33-85BGXI and AS7C35128P-85JCIN, the 71V67903S85BQ8 uniquely combines TQFP-100 packaging, LBO-configurable burst order, and ZZ-enabled ultra-low-power sleep - making it optimal for thermally constrained, field-upgradable embedded systems requiring timing flexibility and power efficiency.
Availability
71V67903S85BQ8 is available at Aetrix Electronics and suitable for networking packet buffers, FPGA co-processor memory, and industrial PLC data logging requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.
Supply support for 71V67903S85BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for industrial, automotive, and communications infrastructure.
The 71V67903S85BQ8 belongs to IDT's legacy high-speed synchronous SRAM product line, engineered for deterministic, low-latency memory interfacing in real-time embedded systems demanding sub-10 ns access and robust burst control.
FAQ
What is the maximum operating frequency supported by the 71V67903S85BQ8?
The 71V67903S85BQ8 supports up to 87 MHz clock frequency, corresponding to an 8.5 ns access time (tCD) and 11.5 ns minimum clock cycle (tCYC). This rating is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. Exceeding 87 MHz violates AC timing specifications and may cause data corruption.
Does the 71V67903S85BQ8 support both linear and interleaved burst modes?
Yes, the 71V67903S85BQ8 supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW selects linear sequence (00→01→10→11), LBO = HIGH selects interleaved (00→01→11→10). The LBO input is static - it must remain stable during device operation and is sampled asynchronously at power-up or reset.
Are BW3 and BW4 pins functional on the 71V67903S85BQ8?
No, BW3 and BW4 are not applicable for the 71V67903S85BQ8. Per the official datasheet (Note 1, Pin Description Summary), these pins are NC (no connect) and must be left unconnected or tied to VSS per board design guidelines. Only BW1 and BW2 are active for byte-write control of the 18-bit data bus.
What is the purpose of the ZZ pin on the 71V67903S85BQ8?
The ZZ pin on the 71V67903S85BQ8 enables asynchronous deep-sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to ≤70 mA (industrial grade) while retaining memory contents. ZZ is asynchronous - no setup/hold timing relative to CLK is required. The device resumes normal operation within tZZR (100 ns) after ZZ returns LOW.
Can the 71V67903S85BQ8 be used in a 256K × 36-bit configuration?
No, the 71V67903S85BQ8 is specifically the 512K × 18-bit variant of the IDT71V67703/67903 family. The 256K × 36-bit configuration is implemented in the pin-compatible 71V67703S85BQ8. Although both share the same package and many control signals, address mapping, data width, and pin assignments (e.g., A18 usage) differ - they are not interchangeable without hardware redesign.
71V67903S85BQ8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67903S85BQ8 FAQ
1.How can I place an order for 71V67903S85BQ8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67903S85BQ8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67903S85BQ8 reliable?
The price and inventory of 71V67903S85BQ8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S85BQ8 is usually 5 days.
3.What payment methods are accepted for 71V67903S85BQ8?
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71V67903S85BQ8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67903S85BQ8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67903S85BQ8?
For technical support, including 71V67903S85BQ8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S85BQ8 requirements.
6.How does Aetrix verify that 71V67903S85BQ8 is sourced from the original manufacturer or authorized distributors?
All 71V67903S85BQ8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S85BQ8 meets industry standards.
7.What is the process for return or replacement of 71V67903S85BQ8?
All 71V67903S85BQ8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S85BQ8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67903S85BQ8 part is unused and in its original packaging.
Return procedure for 71V67903S85BQ8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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