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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67903S85BQI

Name: 71V67903S85BQI
Brand: Renesas
SKU: 71V67903S85BQI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67903S85BQI

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V67903S85BQI.pdf

Description:: IC SRAM 9MBIT PAR 87MHZ 165CABGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

71V67903S85BQI from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It supports 8.5ns access time at up to 87MHz clock frequency, operates across –40°C to +85°C industrial temperature range, and uses JEDEC-standard 100-pin TQFP packaging. It serves as high-speed buffer memory in network packet processors and telecom line cards.

For engineers reviewing the 71V67903S85BQI datasheet, 71V67903S85BQI pinout, 71V67903S85BQI application, or 71V67903S85BQI equivalent, key selection criteria include burst address sequencing control via LBO, self-timed write with GW/BWE/BWx granularity, flow-through output timing, ZZ-controlled sleep mode, and compatibility with 3.3V I/O systems requiring deterministic read latency.

Technical Context

The 71V67903S85BQI implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs - enabling predictable tCD = 8.5ns clock-to-data delay. Its internal burst counter advances on ADV low and selects linear or interleaved sequence based on static LBO pin state.

Write operations support global (GW), byte-selectable (BW1–BW2), and self-timed execution: write enable decisions are deferred until end-of-cycle, allowing dynamic arbitration between concurrent read/write requests. Power management includes asynchronous ZZ-triggered sleep mode with ISB1 ≤ 70mA standby current.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18-bit (9Mbit); configured as 18-bit-wide data bus for high-throughput streaming applications.
Access Time / Max Frequency	8.5ns access time; supports up to 87MHz system clock - enables 348MB/s peak bandwidth (18-bit × 87MHz).
Supply Voltages	VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); separate supplies allow I/O voltage domain isolation in mixed-voltage systems.
Burst Mode Control	LBO pin selects linear or interleaved 4-word burst order; no external counter required - simplifies address generation logic.
Power-Down Current	IZZ ≤ 70mA in full sleep mode (ZZ high); reduces idle power in burst-inactive intervals without losing data retention.
Operating Temperature	–40°C to +85°C industrial grade; qualified for base station, industrial control, and automotive infotainment subsystems.
Package	JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm footprint - compatible with standard SMT reflow and automated optical inspection.

Pinout & Package

71V67903S85BQI is packaged in a JEDEC-standard 100-pin TQFP (PKG100), 14mm × 20mm body, 0.5mm pitch. Pin 1 marked by corner notch; top-view orientation per datasheet drawing 5309 drw 02b.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit synchronous address bus; A0–A17 used for 512K × 18 configuration (2¹⁸ = 262,144 addresses × 18 bits = 4.7Mbit → rounded to 512K × 18 = 9.2Mbit total).
CE, CS0, CS1	Chip Enable / Selects	Three-level synchronous chip select: CE low + CS0 high + CS1 low enables device; allows hierarchical memory decoding in multi-SRAM systems.
GW, BWE, BW1–BW2	Write Control Inputs	Global Write (GW) writes all 18 bits; Byte Write Enable (BWE) gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 - supports 9-bit sub-word writes.
CLK, ADV, ADSP, ADSC	Timing & Burst Control	CLK drives all registers; ADV low advances internal burst counter; ADSP/ADSC load address register on rising CLK edge when asserted low - enables cache/processor coherency signaling.
I/O0–I/O17, I/OP1–I/OP2	Data I/O	18-bit bidirectional data bus + 2 parity bits; flow-through output path eliminates output register delay - critical for deterministic tCD timing.
LBO, ZZ, OE	Mode & Output Control	LBO sets burst order (low = linear); ZZ high forces sleep mode (asynchronous, no clock gating required); OE low enables outputs asynchronously - supports partial bus driving during burst reads.

Key Features

Feature	Design Value
Flow-through output architecture	Eliminates output register delay: tCD = 8.5ns guaranteed, enabling precise timing closure in high-speed backplane interfaces.
Self-timed write cycle	Write decision deferred until end of cycle - allows dynamic resolution of simultaneous read/write conflicts without external arbitration logic.
Single-cycle deselect	Device enters high-Z output state within one CLK cycle after deselection - prevents bus contention during rapid memory bank switching.
Linear/interleaved burst mode	LBO pin statically configures burst address sequence (linear or interleaved), matching processor cache line layouts without firmware overhead.
Asynchronous ZZ sleep control	ZZ high disables internal clock and reduces supply current to ≤70mA while retaining full data - ideal for low-duty-cycle packet buffering.
Industrial temperature qualification	Validated from –40°C to +85°C with full AC/DC specs - suitable for uncooled telecom chassis and factory automation controllers.

Applications

Network Packet Buffering	Telecom Line Card Memory
Use Scenario: Storing incoming Ethernet frames in ingress pipeline before classification and forwarding. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer memory interfacing directly with MAC controller and traffic manager ASICs. Use Value: 8.5ns tCD and flow-through outputs ensure deterministic frame read latency; 512K × 18 organization matches typical 1500-byte MTU + metadata alignment.	Use Scenario: Holding voice channel samples and protocol headers in TDM-over-IP gateways. IC Role / Device Role / Timing Role: Synchronous dual-port-like buffer supporting concurrent read (DSP fetch) and write (PHY ingest) with burst efficiency. Use Value: Linear burst mode aligns with sequential PCM sample access; ZZ sleep cuts power between voice packets without data loss.
Industrial PLC Data Logging	Radar Signal Processing Buffer
Use Scenario: Capturing sensor timestamped events and control loop history in real-time programmable logic controllers. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for cyclic data acquisition buffers synchronized to 1ms PLC scan cycles. Use Value: Single-cycle deselect enables rapid context switching between multiple logging buffers; industrial temp rating ensures reliability in cabinet-mounted hardware.	Use Scenario: Temporary storage of digitized RF chirp samples prior to FFT computation in automotive radar modules. IC Role / Device Role / Timing Role: High-speed ping-pong buffer feeding DSP cores, requiring burst-aligned 18-bit sample streams with minimal latency jitter. Use Value: 87MHz clock support matches ADC sampling rates up to 87 MSPS; LBO-configurable burst order optimizes cache line fill for vectorized FFT engines.

Network Packet Buffering

Telecom Line Card Memory

Use Scenario: Storing incoming Ethernet frames in ingress pipeline before classification and forwarding.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer memory interfacing directly with MAC controller and traffic manager ASICs.

Use Value: 8.5ns tCD and flow-through outputs ensure deterministic frame read latency; 512K × 18 organization matches typical 1500-byte MTU + metadata alignment.

Use Scenario: Holding voice channel samples and protocol headers in TDM-over-IP gateways.

IC Role / Device Role / Timing Role: Synchronous dual-port-like buffer supporting concurrent read (DSP fetch) and write (PHY ingest) with burst efficiency.

Use Value: Linear burst mode aligns with sequential PCM sample access; ZZ sleep cuts power between voice packets without data loss.

Industrial PLC Data Logging

Radar Signal Processing Buffer

Use Scenario: Capturing sensor timestamped events and control loop history in real-time programmable logic controllers.

IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for cyclic data acquisition buffers synchronized to 1ms PLC scan cycles.

Use Value: Single-cycle deselect enables rapid context switching between multiple logging buffers; industrial temp rating ensures reliability in cabinet-mounted hardware.

Use Scenario: Temporary storage of digitized RF chirp samples prior to FFT computation in automotive radar modules.

IC Role / Device Role / Timing Role: High-speed ping-pong buffer feeding DSP cores, requiring burst-aligned 18-bit sample streams with minimal latency jitter.

Use Value: 87MHz clock support matches ADC sampling rates up to 87 MSPS; LBO-configurable burst order optimizes cache line fill for vectorized FFT engines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371BV33-85BZXI	512K × 18, 3.3V, 85MHz, 100-pin TQFP; supports only linear burst; no LBO pin; tCD = 8.5ns same.	Lacks interleaved burst mode and has fixed burst order - limits flexibility in cache-coherent designs.	Choose when burst sequence is fixed and LBO configurability is unnecessary; identical pinout and timing simplify drop-in replacement where LBO unused.
AS7C3512PFS-85BIN	512K × 18, 3.3V, 85MHz, 100-pin TQFP; no ZZ sleep; higher ISB1 = 120mA; tCD = 8.5ns.	No hardware sleep mode - requires software-managed power gating; higher standby current impacts thermal design.	Prefer when system lacks dedicated sleep control signal; verify thermal margin given higher standby power; not suitable for battery-backed or fanless deployments.

Compared with CY7C1371BV33-85BZXI and AS7C3512PFS-85BIN, the 71V67903S85BQI uniquely combines configurable burst ordering (LBO), ultra-low sleep current (≤70mA), and industrial temperature support in a single 100-pin TQFP package - making it optimal for thermally constrained, burst-flexible, and power-aware embedded systems.

Availability

71V67903S85BQI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, industrial PLC data logging, and radar signal processing applications requiring stable component supply and long-term industrial-grade availability.

Supply support for 71V67903S85BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V67903S85BQI belongs to IDT's 71V67x03 family of synchronous SRAMs, designed specifically for high-speed, low-latency buffering in packet-switched networks, baseband processing units, and real-time control systems demanding deterministic timing and industrial reliability.

FAQ

What memory organization does the 71V67903S85BQI support?

The 71V67903S85BQI is organized as 512K × 18 bits (9.2Mbit total), optimized for 18-bit-wide data paths common in telecom DSPs and packet processors. It does not support the 256K × 36 configuration - that variant is implemented in the 71V67703, not the 71V67903S85BQI.

How does the LBO pin affect burst behavior in the 71V67903S85BQI?

In the 71V67903S85BQI, the LBO pin selects burst order: LBO = LOW enables linear burst sequence (A0,A1,A2,A3), while LBO = HIGH enables interleaved sequence (A0,A2,A1,A3). This setting must remain static during operation and is sampled at power-up or reset - it cannot be changed dynamically mid-burst.

Does the 71V67903S85BQI support byte-write capability, and which pins control it?

Yes, the 71V67903S85BQI supports 9-bit byte writes using BW1 and BW2. BW1 controls I/O0–I/O8 and I/OP1; BW2 controls I/O9–I/O17 and I/OP2. BW3 and BW4 are not applicable to this part - they are reserved for the 256K × 36 variant (71V67703) and omitted in the 71V67903S85BQI pinout.

What is the role of the ZZ pin in the 71V67903S85BQI, and how does it impact power consumption?

The ZZ pin in the 71V67903S85BQI provides asynchronous entry into full sleep mode: when ZZ is driven HIGH, the internal clock is gated and supply current drops to ≤70mA (ISB1), while data retention is guaranteed. No clock edges or setup timing are required - sleep activation is immediate and independent of CLK state.

Is the 71V67903S85BQI pin-compatible with other members of the 71V67x03 family?

No - the 71V67903S85BQI is not pin-compatible with the 71V67703 (256K × 36) due to differing address, data, and byte-write pin allocations. While both use 100-pin TQFP, the 71V67903S85BQI omits BW3/BW4 and reassigns several NC pins (e.g., pins 4–5, 7–8 in PKG100), requiring PCB layout revision for substitution.

71V67903S85BQI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: 87 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 8.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V67903S85BQI FAQ

1.How can I place an order for 71V67903S85BQI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67903S85BQI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67903S85BQI reliable?

The price and inventory of 71V67903S85BQI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S85BQI is usually 5 days.

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Once your 71V67903S85BQI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67903S85BQI?

For technical support, including 71V67903S85BQI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S85BQI requirements.

6.How does Aetrix verify that 71V67903S85BQI is sourced from the original manufacturer or authorized distributors?

All 71V67903S85BQI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S85BQI meets industry standards.

7.What is the process for return or replacement of 71V67903S85BQI?

All 71V67903S85BQI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S85BQI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67903S85BQI part is unused and in its original packaging.

Return procedure for 71V67903S85BQI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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