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Renesas 71V67903S85BQI8

Part No.:
71V67903S85BQI8
Manufacturer:
Renesas
Category:
Memory
Package:
165-TBGA
Datasheet:
Aetrix71V67903S85BQI8.pdf
Description:
IC SRAM 9MBIT PAR 87MHZ 165CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,636

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Product details

Overview

71V67903S85BQI8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It supports 8.5ns access time at up to 87MHz clock frequency, operates across –40°C to +85°C industrial temperature range, and features self-timed write with global and byte-level write control - used in high-speed networking packet buffers and real-time DSP memory subsystems.

For engineers reviewing the 71V67903S85BQI8 datasheet, 71V67903S85BQI8 pinout, 71V67903S85BQI8 application, or 71V67903S85BQI8 equivalent, key selection criteria include burst address sequencing (LBO-controlled), 100-pin TQFP package compatibility, flow-through output timing, ZZ sleep mode behavior, and absence of BW3/BW4 pins per datasheet note.

Technical Context

The 71V67903S85BQI8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) outputs - enabling deterministic tCD = 8.5ns clock-to-data delay. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO pin state (linear vs. interleaved), with burst wrap-around after four words.

Write operation is fully synchronous and supports multiple modes: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW2 only; BW3/BW4 are not applicable per datasheet). Power management includes asynchronous ZZ sleep entry with tZZPW ≥ 100ns and tZZR ≥ 100ns recovery.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization512K × 18-bit (9Mbit); configured as 18-bit wide data bus for efficient DSP or network processor interfacing
Access Time / Max Frequency8.5ns access time; supports up to 87MHz system clock - enables ≤11.5ns tCYC cycle timing in high-throughput buffering
Supply VoltagesVDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); separate supplies allow I/O voltage domain isolation
Operating Temperature–40°C to +85°C industrial grade; validated for embedded telecom and industrial control environments
Power ConsumptionISB1 = 70mA (standby), IDD = 210mA (active @ 87MHz); low-power sleep mode draws IZZ = 70mA
Burst ModeFour-word burst with programmable linear/interleaved order via LBO pin; no external counter required
Output ArchitectureFlow-through (unregistered) outputs; eliminates output register delay, critical for tight read-to-read timing

Pinout & Package

Packaged in JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pinout validated per IDT document 5309 drw 02b (512K×18 PKG100 configuration).

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit synchronous address bus; A0/A1 define burst word order per LBO state
CLKClock InputSingle-phase edge-triggered master clock; all synchronous inputs referenced to rising edge
CE, CS0, CS1Chip Enable / SelectsThree-level chip select hierarchy (CE active LOW, CS0 active HIGH, CS1 active LOW)
GW, BWE, BW1–BW2Write Control InputsGlobal write (GW), byte write enable (BWE), and two 9-bit byte enables (BW1 = I/O0–7 + I/OP1, BW2 = I/O8–15 + I/OP2); BW3/BW4 not connected
ADV, ADSP, ADSC, LBO, ZZ, OEControl & Status InputsADV advances burst counter; ADSP/ADSC load address register; LBO selects burst order; ZZ enables sleep; OE asynchronously enables outputs
I/O0–I/O17, I/OP1–I/OP2Data I/O18-bit bidirectional data bus + 2 parity bits; flow-through outputs disable on OE HIGH or during write
VDD, VDDQ, VSSPower & GroundDual supply: VDD (core), VDDQ (I/O), and dedicated VSS pins per functional block for noise reduction

Key Features

FeatureDesign Value
Flow-through output architectureEliminates output register latency - delivers first valid data within 8.5ns of CLK rise, essential for pipeline-constrained systems
Single-cycle deselectDevice enters high-impedance state on next clock edge after deselection - prevents bus contention in multi-SRAM systems
Self-timed write cycleInternal timing logic completes write without external wait-state generation - simplifies controller interface design
Configurable burst order (LBO)LBO pin statically selects linear or interleaved 4-word burst sequence - matches cache line or DMA engine addressing patterns
Asynchronous sleep mode (ZZ)ZZ HIGH gates internal clock and reduces current to 70mA - enables rapid power gating without reset or reinitialization

Applications

Packet Buffer MemoryDSP Data Memory

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decision and egress scheduling.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with burst reads aligned to 64-byte cache lines and flow-through timing for back-to-back frame processing.

Use Value: 8.5ns tCD and single-cycle deselect enable >100MB/s sustained throughput with minimal controller overhead.

Use Scenario: Holding coefficient tables and intermediate results in real-time audio or motor control DSPs requiring deterministic memory access.

IC Role / Device Role / Timing Role: Synchronous, clock-aligned data memory supporting burst fetches for MAC operations and zero-wait-state execution loops.

Use Value: 512K×18 organization provides 18-bit parallel access matching DSP ALU width; industrial temp rating ensures reliability in sealed enclosures.

Industrial PLC I/O MappingTest Equipment Pattern Memory

Use Scenario: Mapping discrete sensor/actuator states in programmable logic controllers where deterministic scan cycle timing is safety-critical.

IC Role / Device Role / Timing Role: Fast-access scratchpad memory storing I/O image tables updated per scan cycle; accessed synchronously with PLC master clock.

Use Value: –40°C to +85°C operation and 70mA standby current support fanless, convection-cooled PLC designs with long-term thermal stability.

Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) pattern generators requiring precise timing alignment.

IC Role / Device Role / Timing Role: Timing-critical vector memory with flow-through outputs ensuring sub-nanosecond jitter in output waveform edges.

Use Value: tCLZ = 0ns and tCHZ = 3.5ns guarantee fast, predictable output enable transitions - critical for <10ns setup/hold compliance in high-speed digital testing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1371BV33-85BAXI512K × 18, 3.3V, 85MHz, 100-pin TQFP; uses different burst control (MODE pin instead of LBO) and lacks ZZ sleep inputNo hardware sleep mode; requires external power management; burst order fixed or software-configuredSelect when sleep mode is unnecessary and Cypress-compatible timing models are preferred
AS7C35128P-85TIN512K × 18, 3.3V, 85MHz, 100-pin TQFP; flow-through outputs, but no ADV/ADSP/ADSC interface - simplified address latch controlLacks cache-coherent address status signaling; suited for microcontroller-based systems without cache coherency requirementsSelect for cost-sensitive MCU-based designs where full IDT-style cache controller interface is unused

Compared with CY7C1371BV33-85BAXI and AS7C35128P-85TIN, the 71V67903S85BQI8 uniquely combines LBO-selectable burst order, asynchronous ZZ sleep, and dual address status inputs (ADSP/ADSC) - making it optimal for cache-coherent, power-aware networking and DSP platforms.

Availability

71V67903S85BQI8 is available at Aetrix Electronics and suitable for packet buffering, DSP data memory, industrial PLC I/O mapping, and ATE pattern storage requiring stable component supply across extended product lifecycles.

Supply support for 71V67903S85BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for communications, computing, and industrial markets.

The 71V67903S85BQI8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking infrastructure and real-time signal processing applications.

FAQ

What is the maximum operating frequency supported by the 71V67903S85BQI8?

The 71V67903S85BQI8 supports up to 87MHz clock frequency, corresponding to its 8.5ns access time specification. This is validated under industrial temperature conditions (–40°C to +85°C) with VDD and VDDQ at 3.3V ±5%. The device meets tCYC = 11.5ns minimum cycle time at this speed, enabling reliable high-throughput memory access in demanding applications like packet buffering and DSP.

Does the 71V67903S85BQI8 support both linear and interleaved burst modes?

Yes, the 71V67903S85BQI8 supports both linear and interleaved burst modes via the LBO (Linear Burst Order) pin. When LBO = LOW, linear burst sequence is selected; when LBO = HIGH, interleaved burst sequence is selected. This selection is static and must remain stable during operation - confirmed in datasheet tables 14 and 15 for the 512K×18 configuration.

Are BW3 and BW4 pins functional on the 71V67903S85BQI8?

No, BW3 and BW4 are not applicable for the 71V67903S85BQI8. Per datasheet note on page 3 (5309 tbl 01) and pin configuration diagrams for PKG100 (5309 drw 02b), BW3 and BW4 are NC (no-connect) for the 512K×18 variant. Only BW1 and BW2 are implemented, controlling byte groups I/O0–7+I/OP1 and I/O8–15+I/OP2 respectively.

What is the purpose of the ADSP and ADSC pins on the 71V67903S85BQI8?

The ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) pins on the 71V67903S85BQI8 serve as synchronous address latching triggers. ADSP is gated by CE and loads the address register on its LOW pulse; ADSC operates independently and is used in cache-coherent systems to synchronize address capture with external cache controllers. Both are essential for burst address generation and flow-through timing alignment.

How does the ZZ pin affect power consumption in the 71V67903S85BQI8?

The ZZ pin on the 71V67903S85BQI8 enables full sleep mode when driven HIGH, internally gating the clock and reducing supply current to IZZ = 70mA (industrial grade). Recovery requires tZZR ≥ 100ns after ZZ returns LOW, and the device must be deselected during wake-up. This feature supports dynamic power management in battery-backed or thermally constrained systems without losing data retention.

71V67903S85BQI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
165-TBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
512K x 18
Memory Interface:
Parallel
Clock Frequency:
87 MHz
Write Cycle Time - Word, Page:
-
Access Time:
8.5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-CABGA (13x15)

71V67903S85BQI8 FAQ

1.How can I place an order for 71V67903S85BQI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67903S85BQI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67903S85BQI8 reliable?

The price and inventory of 71V67903S85BQI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S85BQI8 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67903S85BQI8 transactions.

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71V67903S85BQI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67903S85BQI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67903S85BQI8?

For technical support, including 71V67903S85BQI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S85BQI8 requirements.

6.How does Aetrix verify that 71V67903S85BQI8 is sourced from the original manufacturer or authorized distributors?

All 71V67903S85BQI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S85BQI8 meets industry standards.

7.What is the process for return or replacement of 71V67903S85BQI8?

All 71V67903S85BQI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S85BQI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67903S85BQI8 part is unused and in its original packaging.

Return procedure for 71V67903S85BQI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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