Nexperia USA Inc. 74AHC3G04DP,125

Overview

74AHC3G04DP from Nexperia is a triple CMOS inverter with overvoltage-tolerant inputs (up to 5.5 V), 2.0–5.5 V supply range, -40 °C to +125 °C operating temperature, and TSSOP8 package. It functions as a level translator in mixed-voltage logic interfaces, enabling interoperability between 3.3 V and 5 V subsystems in industrial control I/O modules.

For engineers reviewing the 74AHC3G04DP datasheet, 74AHC3G04DP pinout, 74AHC3G04DP application, or 74AHC3G04DP equivalent, key selection criteria include input voltage tolerance, propagation delay at 3.3 V/5 V, output drive strength (±8 mA), and thermal performance in compact TSSOP8 packaging for space-constrained PCB layouts.

Technical Context

This device implements three independent inverting buffers with CMOS input thresholds and rail-to-rail output swing. Each gate features symmetrical output impedance and balanced propagation delays (tpd ≤ 7.1 ns @ 3.3 V, CL = 15 pF), ensuring minimal skew across channels in timing-critical signal conditioning paths.

Input clamping diodes enable overvoltage tolerance up to 5.5 V regardless of VCC, supporting hot-swap and mixed-supply scenarios. Static characteristics are specified across full industrial and extended temperature ranges (-40 °C to +125 °C), with VIH = 3.85 V and VIL = 1.65 V at VCC = 5.5 V.

Key Specifications

Pinout & Package

TSSOP8 plastic thin shrink small outline package (SOT505-2); 8 leads; body width 3 mm; lead length 0.5 mm; pin 1 index located on lower-left corner below marking code "A04".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar triple inverter applications.

Compared with 74AHC3G04DC, the DP variant offers wider lead spacing (0.65 mm vs 0.5 mm) for improved solder joint reliability in high-vibration environments; versus SN74LVC3G04DC, it provides guaranteed 5.5 V input tolerance essential for robustness in industrial backplanes.

Availability

74AHC3G04DP is available at Aetrix Electronics and suitable for industrial PLC I/O expansion, automotive body control modules, medical instrument data acquisition, and consumer IoT sensor hubs requiring stable component supply across extended temperature ranges.

Supply support for 74AHC3G04DP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance logic, analog, and MOSFET solutions with focus on efficiency, reliability, and miniaturization for industrial and automotive markets.

The 74AHC3G04DP belongs to Nexperia's advanced high-speed CMOS logic family, engineered specifically for robust mixed-voltage signal translation and noise-immune digital interfacing in harsh operating environments.

FAQ

Can 74AHC3G04DP operate with VCC = 2.5 V while accepting 5 V inputs?

Yes. The device supports VCC as low as 2.0 V and maintains overvoltage-tolerant inputs up to 5.5 V regardless of supply level. At VCC = 2.5 V, VIH = 1.75 V and VIL = 0.75 V per datasheet Table 7, enabling reliable detection of 5 V logic levels without damage or undefined states.

What is the maximum capacitive load this device can drive at 10 MHz?

At 10 MHz, with CL = 50 pF and VCC = 5.0 V, typical propagation delay remains ≤ 7.5 ns (Table 8). Output current capability of ±8 mA ensures stable edge rates into 50 pF loads, provided PCB trace inductance is minimized and local decoupling is used.

Does 74AHC3G04DP require external pull-up resistors on inputs?

No. Inputs are CMOS with high-impedance structure and internal ESD protection. Pull-ups are unnecessary unless specific logic state retention is required during power-up or reset; unused inputs should be tied to VCC or GND to prevent floating.

How does thermal derating apply to the TSSOP8 package above 96 °C?

For SOT505-2 (TSSOP8), total power dissipation derates linearly at 4.6 mW/K above 96 °C. At 125 °C ambient, Ptot reduces to 117 mW (250 mW − 4.6 × 29), requiring careful layout with thermal vias and copper pour to maintain junction temperature within safe limits.