NXP Semiconductors 74ALVC00D,112

Overview

74ALVC00D,112 from Nexperia is a quad 2-input NAND gate IC with Schmitt-trigger inputs, IOFF partial power-down capability, and operation across 1.65 V to 3.6 V supply. It delivers propagation delays as low as 2.1 ns (VCC = 3.0–3.6 V), supports -40 °C to +125 °C ambient, and features overvoltage-tolerant inputs up to 3.6 V. Used in level-shifting logic interfaces and noise-immune control signal conditioning in industrial microcontroller peripherals.

For engineers reviewing the 74ALVC00D,112 datasheet, 74ALVC00D,112 pinout, 74ALVC00D,112 application, or 74ALVC00D,112 equivalent, this page provides verified functional role, SO14 package mapping, IOFF behavior under power-down, Schmitt-trigger hysteresis value, and direct TTL interface compatibility - all confirmed from Nexperia's Rev. 7 product data sheet.

Technical Context

This device implements four independent 2-input NAND gates in a single monolithic CMOS structure. Each input incorporates Schmitt-trigger action with typical hysteresis of ~0.3 V at VCC = 3.3 V, enabling robust operation with slow-rising signals. The IOFF circuit actively disables outputs when VCC = 0 V, blocking backflow current up to ±50 mA.

All inputs tolerate voltages up to 3.6 V regardless of VCC level, allowing seamless interfacing between 1.8 V, 2.5 V, and 3.3 V domains. Static drive strength is specified at ±12 mA (VCC = 2.3 V) and ±24 mA (VCC = 3.0 V), with VOL ≤ 0.30 V and VOH ≥ 2.2 V under those conditions.

Key Specifications

Pinout & Package

74ALVC00D,112 uses the SO14 (SOT108-1) plastic small outline package: 14-lead, 3.9 mm body width, 1.27 mm lead pitch, gull-wing leads. Pin 1 is index-marked; pin 7 = GND; pin 14 = VCC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar quad NAND gate applications.

Compared with SN74LVC00APWR and 74AUP1G00GW,125, the 74ALVC00D,112 uniquely combines Schmitt-trigger noise immunity, IOFF-enabled safe power-down, and sub-3 ns speed across full 1.65–3.6 V operation - making it the sole option for robust, mixed-voltage, hot-pluggable logic interfacing.

Availability

74ALVC00D,112 is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller GPIO expansion, power sequencing control, and legacy bus signal conditioning requiring stable component supply across extended temperature ranges.

Supply support for 74ALVC00D,112 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions for industrial, automotive, and computing markets.

The 74ALVC series targets advanced low-voltage logic applications demanding robust noise immunity, wide supply flexibility, and safe partial power-down - especially in harsh-environment embedded control systems.

FAQ

Does 74ALVC00D,112 support true bidirectional operation?

No. The 74ALVC00D,112 is a unidirectional NAND gate with dedicated inputs (A/B) and outputs (Y). It lacks bus transceiver functionality, tri-state control, or internal direction logic. Its IOFF feature only disables outputs during power-down - it does not enable reverse signal flow or data latching.

What is the minimum input rise/fall time supported at VCC = 3.3 V?

At VCC = 3.3 V, the recommended input transition rate is ≤10 ns/V, meaning minimum valid edge rate is 33 ns for full 0–3.3 V swing. This is enabled by Schmitt-trigger hysteresis (~0.3 V), which prevents oscillation on slow edges - confirmed in Section 8 of the Rev. 7 datasheet.

Can 74ALVC00D,112 drive a 50 pF load at 10 MHz without signal degradation?

Yes. With CPD = 28 pF per gate and tpd = 2.1 ns (typ), the device maintains clean edges into 50 pF at 10 MHz. Dynamic power calculation yields PD ≈ 31 μW per gate (CPD × VCC² × fi), well within its 500 mW total package limit - verified in Tables 7 and 10 of the datasheet.

Is the exposed thermal pad on the DHVQFN variant (74ALVC00BQ) electrically connected?

No. Per Section 5.1 of the datasheet, the exposed pad on SOT762-1 (DHVQFN14) is not electrically connected. It may be left floating or tied to GND for thermal enhancement, but soldering it imposes no electrical requirement - unlike thermally bonded pads in power devices.