Diodes Incorporated 74AUP1G00FW5-7

Overview

74AUP1G00FW5-7 from Diodes Incorporated is a single two-input positive NAND gate in the Advanced Ultra Low Power (AUP) CMOS logic family, designed for battery-powered portable electronics. It operates across 0.8V–3.6V supply, delivers ±4 mA output drive at 3.0V, features IOFF partial power-down protection, and includes Schmitt-trigger inputs with ~250 mV hysteresis at 3.0V for noise immunity in low-slew-rate signal paths.

For engineers reviewing the 74AUP1G00FW5-7 datasheet, 74AUP1G00FW5-7 pinout, 74AUP1G00FW5-7 application, or 74AUP1G00FW5-7 equivalent, this device is selected for ultra-low static current (<0.9 µA), wide V_CC tolerance, and compact X1-DFN1010-6 packaging-key criteria for space-constrained, multi-rail IoT sensor nodes and wearable power management subsystems.

Technical Context

This NAND gate implements standard Boolean logic Y = A·B with push-pull CMOS output stage and full IOFF functionality that disables outputs during partial power-down to prevent backflow current. Its Schmitt-trigger inputs provide defined switching thresholds and hysteresis, enabling reliable operation with slow-rising or noisy control signals.

The device supports industrial temperature range (−40°C to +125°C), meets JESD22 ESD ratings (2 kV HBM, 1 kV CDM), and complies with RoHS, halogen-free, and antimony-free "Green" standards. Propagation delay ranges from 1.0 ns (typ, 3.3V, CL=5 pF) to 8.4 ns (max, 3.3V, CL=30 pF), scaling predictably with load capacitance and supply voltage.

Key Specifications

Pinout & Package

X1-DFN1010-6 package: 1.0 mm × 1.0 mm × 0.5 mm body, 0.35 mm pad pitch, no leads, bottom thermal pad (exposed die attach), moisture sensitivity level 1 (MSL1).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND gate applications.

Compared with SN74LVC1G00DBVR and NC7SZ00P5X, the 74AUP1G00FW5-7 uniquely balances ultra-low ICC, guaranteed IOFF, Schmitt inputs, and full 3.3 V drive in a 1.0 mm × 1.0 mm DFN-making it optimal for battery-critical, multi-voltage, noise-prone embedded control points.

Availability

74AUP1G00FW5-7 is available at Aetrix Electronics and suitable for battery-powered wearables, USB-C power delivery controllers, and industrial wireless sensor nodes requiring stable component supply across long production lifecycles.

Supply support for 74AUP1G00FW5-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for consumer, industrial, and automotive markets.

The 74AUP logic family targets ultra-low-power portable electronics, delivering nanowatt static operation and flexible voltage scalability to extend battery life in space-constrained devices.

FAQ

What is the maximum recommended operating temperature for 74AUP1G00FW5-7?

The device is fully specified for operation from −40°C to +125°C ambient temperature. Junction temperature must not exceed +150°C under worst-case power dissipation and board thermal resistance conditions. Thermal design should account for θ_JA = 435°C/W for the X1-DFN1010-6 package and ensure adequate PCB copper area under the exposed pad.

Can 74AUP1G00FW5-7 be used with 0.8 V logic signals while powered at 1.8 V?

Yes. The input voltage range is 0 V to V_CC + 0.5 V, and VIH/VIL thresholds scale with V_CC. At 1.8 V supply, VIH(min) = 1.17 V and VIL(max) = 0.63 V, so 0.8 V logic swings (e.g., from a 0.8 V domain) will register as solid LOW inputs without risk of indeterminate states.

Does the exposed pad on the X1-DFN1010-6 package require electrical connection?

Yes-the exposed pad is internally connected to GND and must be soldered to a PCB ground plane. This connection provides primary thermal conduction path and reduces package inductance, improving noise immunity and ESD performance. Floating or unconnected pads cause elevated junction temperature and degraded ESD robustness.

How does IOFF behavior affect system-level power sequencing?

When V_CC = 0 V, IOFF disables both input and output buffers, limiting leakage to ≤0.6 µA. This prevents current from flowing backward through the gate when downstream circuitry remains powered-enabling safe, independent power cycling of subsystems without hardware reset coordination or external isolation diodes.