Nexperia USA Inc. 74AUP1G08GN,132

Overview

74AUP1G08GN,132 from Nexperia is a single 2-input positive-AND gate in ultra-low-power CMOS technology, operating from 0.8 V to 3.6 V supply, with typical propagation delay of 2.3 ns at 3.3 V and output drive capability of ±4 mA. It is used in battery-powered IoT sensor nodes for logic-level signal conditioning prior to ADC sampling.

For engineers reviewing the 74AUP1G08GN,132 datasheet, 74AUP1G08GN,132 pinout, 74AUP1G08GN,132 application, or 74AUP1G08GN,132 equivalent, key selection criteria include supply voltage range, propagation delay vs. V_CC, output drive strength, dynamic power consumption at 1 MHz, and GN package thermal resistance.

Technical Context

This device implements standard AND logic using advanced AUP (Advanced Ultra-low Power) silicon process, delivering rail-to-rail input compatibility and guaranteed logic thresholds across full V_CC range. It features ESD protection exceeding 2 kV HBM and supports partial power-down operation with I_OFF isolation.

The gate operates with no internal pull-ups or pull-downs, requires external termination for unused inputs, and exhibits monotonic transition behavior under all valid supply and load conditions.

Key Specifications

Pinout & Package

Package: GN - 6-pin XSON (1.25 × 1.0 mm, 0.5 mm pitch), exposed pad not connected, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 2-input AND gate applications.

Compared with SN74LVC1G08DBVR and 74LVC1G08GW,125, the 74AUP1G08GN,132 uniquely delivers sub-1 V operation, <1 µA static current, and guaranteed I_OFF, making it the sole choice for energy-constrained, mixed-supply, or hot-swap-sensitive designs.

Availability

74AUP1G08GN,132 is available at Aetrix Electronics and suitable for wireless sensor nodes, wearable health monitors, energy-harvesting controllers, and industrial battery management systems requiring stable component supply over extended production lifecycles.

Supply support for 74AUP1G08GN,132 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

The 74AUP series targets ultra-low-power logic applications where nanowatt static consumption, sub-1 V operation, and robust I_OFF behavior are mandatory design requirements.

FAQ

What is the maximum recommended trace length for the 74AUP1G08GN,132 output when driving a 15 pF load?

Maximum recommended PCB trace length is 35 mm for controlled-impedance routing (Z₀ = 50 Ω) to maintain signal integrity with <5% overshoot. Longer traces require series termination at the source or reduce toggle frequency below 25 MHz to avoid ringing-induced logic errors.

Can Pin 6 (N/C) be used as a thermal pad or grounded for improved thermal performance?

No - Pin 6 has no internal connection and is not bonded to die or substrate. Grounding it provides no thermal benefit and risks solder bridging. The GN package relies on the copper land under the exposed pad area (not present in GN) and top-side convection; thermal resistance θ_JA is specified at 320 K/W with standard JEDEC 2-layer board.

Does the 74AUP1G08GN,132 support hot insertion into a live backplane?

Yes - its I_OFF circuitry limits current to <0.5 µA when V_CC = 0 V, and inputs tolerate voltages up to V_CC + 0.5 V. However, V_CC must ramp monotonically during insertion; abrupt application of full V_CC before GND stabilization may exceed absolute maximum ratings.

Is there a version of this AND gate with Schmitt-trigger inputs for noisy sensor interfaces?

Yes - Nexperia offers the 74AUP1G17GN,132, which shares identical package, supply range, and ultra-low-power characteristics but replaces standard CMOS inputs with hysteresis (ΔV_IN ≈ 0.3 V at V_CC = 3.3 V), enabling robust operation with slow-rising or EMI-prone signals from reed switches or analog comparators.