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NXP Semiconductors 74AUP2G132GD,125

Part No.:
74AUP2G132GD,125
Manufacturer:
NXP Semiconductors
Category:
Gates and Inverters
Package:
8-XFDFN
Datasheet:
Aetrix74AUP2G132GD,125.pdf
Description:
IC GATE NAND 2CH 2-INP 8-XSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:447,102

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Product details

Overview

74AUP2G132GD,125 from Nexperia is a dual 2-input NAND gate with Schmitt-trigger inputs, designed for noise-immune signal conditioning in low-voltage digital systems. It operates across 0.8 V to 3.6 V, delivers ICC ≤ 0.9 μA (max) at +125 °C, features IOFF for partial power-down protection, and supports −40 °C to +125 °C ambient operation - used in wave shaping and multivibrator circuits.

For engineers reviewing the 74AUP2G132GD,125 datasheet, 74AUP2G132GD,125 pinout, 74AUP2G132GD,125 application, or 74AUP2G132GD,125 equivalent, this page provides verified package mapping (XSON8, SOT1116), confirmed Schmitt-trigger hysteresis (VH = 0.79–1.31 V at VCC = 3.0 V), IOFF leakage (±0.75 μA), propagation delay (1.4–6.2 ns at CL = 5 pF), and functional substitution guidance.

Technical Context

This device implements two independent NAND logic gates, each with Schmitt-trigger input thresholds (VT+ = 1.88–2.32 V, VT− = 0.88–1.24 V at VCC = 3.0 V) enabling robust noise rejection on slow-rising signals. Its IOFF circuit actively disables outputs during VCC = 0 V, preventing backflow current in mixed-supply or hot-swap systems.

It complies with JEDEC standards JESD8-12 through JESD8C across five voltage bands and meets HBM ESD > 5000 V and CDM > 1000 V. Input overvoltage tolerance up to 3.6 V allows interfacing with higher-voltage logic without level shifters.

Key Specifications

ParameterValue and Actual Design Meaning
Supply Voltage Range0.8 V to 3.6 V - enables direct interface with 1.2 V, 1.8 V, 2.5 V, and 3.3 V logic domains
Max ICC (Tamb = −40 °C to +125 °C)1.4 μA - ensures ultra-low static power in battery-powered or always-on sensor nodes
IOFF Leakage (VCC = 0 V)±0.75 μA - prevents damaging back-current during partial power-down sequences
Propagation Delay (VCC = 3.0 V, CL = 5 pF)1.4–6.2 ns - supports timing-critical edge detection and pulse generation up to ~100 MHz
Hysteresis Voltage (VCC = 3.0 V)0.79–1.31 V - rejects noise spikes up to 1.3 V peak-to-peak without false triggering
Input Overvoltage Tolerance3.6 V - permits safe connection to 3.3 V I/O even when VCC = 0.8 V
ESD Rating (HBM)> 5000 V - exceeds JEDEC JS-001 Class 3A for handling robustness in assembly

Pinout & Package

XSON8 package (SOT1116): plastic extremely thin small outline, no leads, 8 terminals, body size 1.2 mm × 1.0 mm × 0.35 mm, thermal pad omitted.

Pin/TerminalCircuit RoleDesign Meaning
1A, 2AData input (Gate 1 and Gate 2)Schmitt-triggered NAND inputs - accept slow edges and reject noise via hysteresis
1B, 2BData input (Gate 1 and Gate 2)Second input per gate; all four inputs tolerate 3.6 V regardless of VCC
1Y, 2YData output (Gate 1 and Gate 2)CMOS push-pull outputs; IOFF disables both when VCC = 0 V
VCCSupply voltageSingle rail powers both gates; IOFF activation requires VCC = 0 V
GNDGround referenceCommon return for inputs, outputs, and internal biasing networks

Key Features

FeatureDesign Value
Wide VCC range0.8 V to 3.6 V enables drop-in use across multiple supply domains without redesign
IOFF circuitryActive output disable at VCC = 0 V prevents backfeed in multi-rail power sequencing
High noise immunityTypical hysteresis 1.1 V at 3.0 V VCC suppresses EMI-induced glitches on long traces
Low dynamic powerCPD = 3.2 pF (VCC = 1.65–1.95 V) minimizes switching loss in high-frequency clock shaping
JEDEC-compliant operationValidated across five voltage bands (JESD8-12 to JESD8C) for global system compatibility

Applications

Wave ShapingAstable Multivibrator

Use Scenario: Converting noisy or slow-rising analog sensor outputs (e.g., thermistor-based comparators) into clean digital pulses for microcontroller capture.

IC Role / Device Role / Timing Role: Dual Schmitt NAND acts as edge cleaner and level translator between sub-1 V analog front-end and 1.8 V MCU I/O.

Use Value: Eliminates need for external RC filters or dedicated comparator ICs, reducing BOM count by one active component.

Use Scenario: Generating precise square-wave clocks for LED flash timing or sensor sampling in portable medical devices.

IC Role / Device Role / Timing Role: Cross-coupled NAND gates form self-oscillating relaxation oscillator with frequency set by external RC network.

Use Value: Achieves stable oscillation down to 0.8 V supply, enabling operation from single-cell Li-ion (2.5–4.2 V) via LDO dropout margin.

Monostable MultivibratorPower Sequencing Monitor

Use Scenario: Creating fixed-duration enable pulses for peripheral wake-up (e.g., BLE radio activation after button press).

IC Role / Device Role / Timing Role: One gate configured as monostable trigger; input edge initiates output pulse shaped by RC time constant.

Use Value: Pulse width accuracy maintained across −40 °C to +125 °C due to temperature-stable VT+/VT− thresholds.

Use Scenario: Detecting undervoltage lockout (UVLO) faults during multi-rail power-up in industrial PLC modules.

IC Role / Device Role / Timing Role: NAND gate compares delayed and raw 3.3 V rail signals; Schmitt input prevents chatter during rail crossing.

Use Value: IOFF ensures no current flows from 3.3 V monitoring node into unpowered 1.2 V domain during startup sequencing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schmitt NAND gate applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SN74LVC2G132DCURWider VCC range (1.65–5.5 V); higher ICC (10 μA typ); no IOFFRequires external isolation for partial power-down; unsuitable for sub-1.65 V systemsSelect only if 5 V tolerance or legacy LVC logic family compatibility is required
74LVC2G132GM,132Same AUP family but XQFN8 (SOT902-2); 0.8–3.6 V; IOFF present; slightly higher ICC (1.8 μA max)Thermal pad improves power dissipation margin but increases PCB footprint and rework complexityPrefer for thermally constrained designs where 0.35 mm height is acceptable

Compared with SN74LVC2G132DCUR and 74LVC2G132GM,132, the 74AUP2G132GD,125 offers lowest ICC (1.4 μA max), smallest footprint (1.2 × 1.0 mm), and guaranteed IOFF - making it optimal for space-constrained, ultra-low-power, and multi-rail sequenced applications.

Availability

74AUP2G132GD,125 is available at Aetrix Electronics and suitable for wave shapers, astable/monostable multivibrators, and power sequencing monitors requiring stable component supply across automotive, industrial, and portable electronics programs.

Supply support for 74AUP2G132GD,125 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions with leadership in efficiency and miniaturization.

The 74AUP (Advanced Ultra-low Power) product line targets battery-operated and energy-sensitive applications, delivering sub-μA static current and wide-VCC compatibility without sacrificing speed or noise immunity.

FAQ

What is the maximum operating temperature for 74AUP2G132GD,125?

The device is fully specified from −40 °C to +125 °C ambient temperature, with all electrical parameters (including ICC ≤ 1.4 μA, VOH ≥ 2.30 V, VOL ≤ 0.50 V) guaranteed across this full range per Table 6 and Table 7 of the Rev. 11 datasheet.

Does 74AUP2G132GD,125 support partial power-down mode?

Yes - its integrated IOFF circuitry disables both outputs when VCC = 0 V, limiting power-off leakage to ±0.75 μA (max) and preventing destructive back-current flow into powered downstream logic, as validated in Table 7 under ΔIOFF conditions.

Can 74AUP2G132GD,125 interface directly with 3.3 V inputs while running at 1.2 V VCC?

Yes - inputs tolerate up to 3.6 V regardless of VCC level, allowing direct connection to 3.3 V signals without level shifters or clamping diodes, as specified in Table 5 (VI input voltage: −0.5 V to +4.6 V) and Section 2 features.

What package variant does 74AUP2G132GD,125 use?

It uses the XSON8 package per SOT1116 outline: 8-terminal, leadless, 1.2 mm × 1.0 mm × 0.35 mm body, with pin 1 marked in the lower-left corner below the "aE" marking code, as defined in Tables 1 and 2 and Figure 5 of the datasheet.

74AUP2G132GD,125 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
74AUP
Package/Case:
8-XFDFN
Packaging:
Bulk
Product Status:
Active
Logic Type:
NAND Gate
Number of Circuits:
2
Number of Inputs:
2
Features:
Schmitt Trigger
Voltage - Supply:
0.8V ~ 3.6V
Current - Quiescent (Max):
500 nA
Current - Output High, Low:
4mA, 4mA
Input Logic Level - Low:
0.1V ~ 0.88V
Input Logic Level - High:
0.6V ~ 2.29V
Max Propagation Delay @ V, Max CL:
7.8ns @ 3.3V, 30pF
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-XSON (2x3)

74AUP2G132GD,125 FAQ

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6.How does Aetrix verify that 74AUP2G132GD,125 is sourced from the original manufacturer or authorized distributors?

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7.What is the process for return or replacement of 74AUP2G132GD,125?

All 74AUP2G132GD,125 units undergo pre-shipment inspection (PSI). If there is an issue with 74AUP2G132GD,125, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 74AUP2G132GD,125 part is unused and in its original packaging.

Return procedure for 74AUP2G132GD,125:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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