Nexperia USA Inc. 74CB3Q3253BQX

Overview

74CB3Q3253BQX from Nexperia is a dual 1-of-4 FET bus switch with integrated charge pump, designed for high-bandwidth signal routing in mixed-voltage systems. It supports 0 V to 5 V signal switching at VCC = 3.3 V or 2.5 V, delivers 4 Ω typical ON resistance, 0.5 GHz bandwidth, and operates across –40 °C to +85 °C - enabling robust bus isolation in industrial communication backplanes.

For engineers reviewing the 74CB3Q3253BQX datasheet, 74CB3Q3253BQX pinout, 74CB3Q3253BQX application, or 74CB3Q3253BQX equivalent, key selection criteria include overvoltage tolerance (5.5 V switch voltage), IOFF-enabled partial power-down, and TTL/CMOS-compatible control inputs with active-low enable logic.

Technical Context

The device implements two independent single-pole, quad-throw NMOS FET switches, each controlled by a 2-bit binary select (S0/S1) and an active-low output enable (nOE). The internal charge pump elevates gate drive above VCC to maintain low RON(flat) across full signal swing.

Switching behavior follows a deterministic function table: when nOE is LOW, one of four Bn paths connects to the common A terminal based on S1/S0 state; when nOE is HIGH, all channels enter high-impedance OFF-state with 3.5 pF typical OFF-capacitance and ±1 μA leakage.

Key Specifications

Pinout & Package

DHVQFN16 (SOT763-1) package: 2.5 × 3.5 × 0.85 mm body, 16-terminal no-lead thermal-enhanced quad flat layout with exposed thermal pad (non-soldered or floating GND connection per datasheet).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar FET bus switch applications.

Compared with 74CB3Q3253BQX, the 74CBTLV3253PW lacks overvoltage switching capability and exhibits higher RON, while the SN74CBT3253PWR omits IOFF and consumes >3× more supply current - making the 74CB3Q3253BQX uniquely suited for mixed-voltage, low-power, and high-fidelity signal routing where both 5 V tolerance and zero-VCC isolation are mandatory.

Availability

74CB3Q3253BQX is available at Aetrix Electronics and suitable for communication infrastructure, bus isolation, memory interleaving, and sensor multiplexing requiring stable component supply across industrial temperature ranges and long production lifecycles.

Supply support for 74CB3Q3253BQX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance logic, discrete, and MOSFET solutions optimized for industrial, automotive, and computing applications.

The 74CB3Q series targets high-speed, low-distortion signal routing in mixed-voltage digital systems - specifically engineered to eliminate level shifters while maintaining signal fidelity in backplane, memory, and sensor interface designs.

FAQ

What is the maximum signal frequency supported by the 74CB3Q3253BQX?

The device supports a maximum switching frequency of 20 MHz under recommended operating conditions (VCC = 3.0–3.6 V), with 0.5 GHz small-signal bandwidth ensuring minimal edge degradation. Propagation delay remains ≤5.9 ns, and ON-state capacitance is 13–17 pF - collectively enabling reliable operation in DDR3 strobe routing and multi-MHz sensor scanning applications without added termination.

Can the 74CB3Q3253BQX safely pass 5 V signals when powered at 3.3 V?

Yes - the integrated charge pump enables full 0–5 V signal switching at VCC = 3.3 V or 2.5 V, with absolute maximum switch voltage rated to 7.0 V and recommended operating range up to 5.5 V. This eliminates external level shifters in mixed-voltage systems such as 5 V sensor interfaces connected to 3.3 V microcontrollers.

Does the 74CB3Q3253BQX support partial power-down mode?

Yes - IOFF functionality ensures that when VCC = 0 V, leakage current per pin remains ≤±1 μA even with 0–5.5 V applied to switch terminals. This prevents back-powering of unpowered domains and enables true partial power-down in systems with staggered power sequencing, such as modular PLCs or hot-swappable I/O cards.

How does the DHVQFN16 package of the 74CB3Q3253BQX improve thermal performance?

The SOT763-1 DHVQFN16 package features a thermally enhanced construction with 2.5 × 3.5 mm footprint and 0.85 mm height, including an exposed thermal pad. Although the datasheet specifies the pad may be left floating or connected to GND, doing so improves thermal resistance by up to 30% versus TSSOP16 - critical for sustained 120 mA per channel operation in compact industrial enclosures.