Texas Instruments 74CBTD16210DGVRE4

Overview

74CBTD16210DGVRE4 from Texas Instruments is a 20-bit FET bus switch with integrated level shifting, designed for bidirectional 5-V-to-3.3-V signal translation between mixed-voltage domains. It features dual 10-bit sections with independent OE controls, 5 Ω typical on-state resistance, sub-1 ns propagation delay, and TTL-compatible inputs - enabling high-speed data routing in memory expansion, processor interconnect, and FPGA I/O bridging applications.

For engineers reviewing the 74CBTD16210DGVRE4 datasheet, 74CBTD16210DGVRE4 pinout, 74CBTD16210DGVRE4 application, or 74CBTD16210DGVRE4 equivalent, key selection criteria include its verified 5-V input / 3.3-V output level-shifting capability, dual-OE control architecture, 48-pin TVSOP package thermal performance (θ_JA = 58°C/W), and compliance with JEDEC MO-153 mechanical standards.

Technical Context

The 74CBTD16210DGVRE4 implements two independent 10-bit FET-based transmission gates, each controlled by a dedicated OE input. Its internal diode-to-V_CC structure enables passive level shifting without external components, supporting 5-V signals at port A and delivering 3.3-V-compatible outputs at port B.

Switching is governed by positive-logic OE: low enables A↔B conduction (Z_ON ≈ 5–7 Ω), high forces high-impedance isolation. Propagation delay (t_pd) is specified at 0.25 ns (typ) under CL = 50 pF, and enable/disable times (t_en/t_dis) range from 1.5 ns to 9.8 ns across temperature and voltage conditions.

Key Specifications

Pinout & Package

74CBTD16210DGVRE4 is housed in a 48-pin TVSOP (DGV) package per JEDEC MO-153, measuring 12.6 mm × 6.1 mm × 1.2 mm max height, with 0.4 mm pitch and Q1 pin-1 quadrant orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bus-switching applications.

Compared with SN74CBT16210DGGR, the 74CBTD16210DGVRE4 offers superior thermal performance (58 vs. 70°C/W) in a smaller TVSOP footprint; versus SN74LVC16245ADGVR, it provides native 5-V→3.3-V translation without added components - making it the sole option for compact, thermally demanding level-shifting bus applications.

Availability

74CBTD16210DGVRE4 is available at Aetrix Electronics and suitable for memory expansion interfaces, FPGA I/O bridging, processor interconnects, and industrial backplane designs requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for 74CBTD16210DGVRE4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with over 90 years of innovation in high-reliability silicon solutions.

The 74CBTD16210DGVRE4 belongs to TI's Widebus™ family of high-speed bus switches, engineered specifically for low-latency, level-shifting data routing in mixed-voltage digital systems - targeting computing, communications, and industrial control applications.

FAQ

What is the maximum continuous current rating per channel for the 74CBTD16210DGVRE4?

The 74CBTD16210DGVRE4 supports a continuous channel current of 128 mA per switch path, as specified in its absolute maximum ratings. This rating applies under recommended operating conditions (V_CC = 4.5–5.5 V, T_A = –40°C to +85°C) and ensures safe conduction without thermal runaway or parametric shift. Exceeding this current may degrade r_on stability or accelerate wear-out mechanisms.

Does the 74CBTD16210DGVRE4 support bidirectional level shifting between 3.3-V and 5-V domains?

The 74CBTD16210DGVRE4 is explicitly designed for unidirectional 5-V-to-3.3-V level shifting: port A accepts 5-V signals, and port B delivers 3.3-V-compatible outputs via its integrated V_CC-clamp diode. It does not support reverse-direction (3.3-V→5-V) translation, as no internal circuitry provides 3.3-V input protection or 5-V output drive capability.

Can unused OE inputs on the 74CBTD16210DGVRE4 be left floating?

No - all unused control inputs, including 1OE and 2OE, must be held at either V_CC or GND to prevent undefined switching states and excessive ICC current. Floating OE pins may cause partial turn-on of FET channels, leading to increased supply current (up to 2.5 mA per misbiased input) and potential signal contention. TI recommends tying unused OE lines directly to V_CC for disable or GND for enable, per SCBA004 application report guidance.

What is the significance of the "E4" suffix in 74CBTD16210DGVRE4?

"E4" is Texas Instruments' tape-and-reel packaging suffix indicating a 2000-unit reel quantity in a standard large-diameter (330 mm) carrier, compliant with JEDEC J-STD-020 moisture sensitivity Level-1 (unlimited floor life at ≤30°C/60% RH). The "E4" designation appears on the device marking (CYD210) and correlates to TI's internal shipping and handling specification for automated SMT placement.

How does the 74CBTD16210DGVRE4 handle fast edge-rate signals in level-shifting mode?

Per TI's datasheet note, the 74CBTD16210DGVRE4's level-shifting effect diminishes at high frequencies or with fast edge rates (>100 MHz) and multiple simultaneous switching outputs. In such cases, the output waveform approximates the input due to capacitive coupling and limited diode response - resulting in reduced voltage translation fidelity. For critical high-speed level shifting, TI recommends verifying signal integrity with actual load capacitance and edge rate in the target application.