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Home > Products > Integrated Circuits (ICs) > Logic > Signal Switches, Multiplexers, Decoders

Texas Instruments 74CBTLV3857DBQRE4

Name: 74CBTLV3857DBQRE4
Brand: Texas Instruments
SKU: 74CBTLV3857DBQRE4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 74CBTLV3857DBQRE4

Manufacturer:: Texas Instruments

Category:: Signal Switches, Multiplexers, Decoders

Package:: 24-SSOP (0.154", 3.90mm Width)

Datasheet:: 74CBTLV3857DBQRE4.pdf

Description:: IC BUS SW 10 X 1:1 24SSOP/QSOP

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Product details

Overview

74CBTLV3857DBQRE4 from Texas Instruments is a 10-bit FET bus switch designed for 3-V to 3.6-V V_CC operation with SSTL_2-compatible enable input, 10-kΩ internal pulldowns on B-port I/Os, and rail-to-rail switching-optimized for DDR SDRAM data-path termination replacement in 200 Mbit/s double-data-rate systems.

For engineers reviewing the 74CBTLV3857DBQRE4 datasheet, 74CBTLV3857DBQRE4 pinout, 74CBTLV3857DBQRE4 application, or 74CBTLV3857DBQRE4 equivalent, key selection criteria include on-state resistance (7–13 Ω at V_CC = 3 V), I_off-enabled partial-power-down isolation, propagation delay ≤0.25 ns, and QSOP-24 package compatibility with high-density DDR memory interfaces.

Technical Context

This device implements a flow-through architecture with 10 independent bidirectional FET switches, each controlled by a single active-low OE signal. Its on-resistance profile (7–13 Ω) is specifically tuned to eliminate external series termination resistors in SSTL_2 DDR data paths without signal integrity degradation.

V_REF (0.38 × V_CC) establishes AC/DC thresholds for OE, enabling precise timing control across temperature (−40°C to 85°C). Internal 10-kΩ B-port pulldowns and 50-kΩ OE pullup ensure defined logic states during power sequencing and support I_off-based partial-power-down mode compliance per JESD78 Class II.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CC Range	3 V to 3.6 V - supports standard 3.3-V DDR memory subsystems with ±0.3-V margin
On-State Resistance (r_on)	7–13 Ω at V_CC = 3 V - replaces discrete 22–33-Ω series termination resistors in SSTL_2 data lines
Propagation Delay (t_pd)	≤0.25 ns - enables clean signal routing at 200 Mbit/s DDR data rates without added timing skew
I_off Support	Yes - prevents backflow current during partial power-down, isolating powered-down sections of DDR memory bus
B-Port Pulldowns	10 kΩ to GND - ensures stable low state on B-side I/Os when unconnected or tri-stated
OE Input Compatibility	SSTL_2 - accepts V_REF ±350 mV AC thresholds, matching DDR controller output swing
Package	QSOP-24 (DBQ) - 0.635-mm pitch, flow-through pinout minimizes PCB trace crossovers in dense memory layouts

Pinout & Package

74CBTLV3857DBQRE4 is housed in a 24-pin QSOP (DBQ) package with 0.635-mm lead pitch and flow-through pin arrangement optimized for DDR memory bus routing. Pin 1 is top-left corner (A1), with V_CC at pin 12, GND at pin 11, OE at pin 23, and V_REF at pin 1.

Pin/Terminal	Circuit Role	Design Meaning
A1–A10	Data input/output (port A)	Bidirectional I/O connected to memory controller side; no internal biasing
B1–B10	Data input/output (port B)	Bidirectional I/O connected to DDR SDRAM side; each has 10-kΩ pulldown to GND
OE	Active-low output-enable	Low = switch closed (A↔B); high = high-impedance isolation; SSTL_2 compatible
V_REF	Reference voltage input	Set to 0.38 × V_CC; defines OE threshold for AC/DC logic levels
V_CC	Supply voltage	3–3.6 V power for switch FETs and internal bias circuitry
GND	Ground reference	Return path for all I/O and internal logic; must be low-impedance for DDR signal integrity

Key Features

Feature	Design Value
Rail-to-rail switching	Full 0–V_CC signal swing preserved across A/B ports, maintaining SSTL_2 voltage margins
Flow-through architecture	Input and output pins aligned on opposite sides (A1–A10 left, B1–B10 right), eliminating layer swaps in DDR layout
Internal 10-kΩ B-port pulldowns	Prevents floating inputs on SDRAM side during initialization or power-down, reducing noise susceptibility
I_off protection	Blocks current flow when V_CC = 0 V, enabling safe hot-insertion and mixed-voltage domain isolation
Latch-up immunity	>100 mA per JESD78 Class II - ensures robustness in noisy DDR memory environments

Applications

DDR SDRAM Memory Interface	High-Speed Bus Isolation
Use Scenario: Interfacing a memory controller to DDR SDRAM chips in embedded computing or networking equipment. IC Role / Device Role / Timing Role: Bidirectional bus switch replacing series termination resistors on DQ/DQS lines while preserving signal integrity at 200 Mbit/s. Use Value: Eliminates 20 discrete 22–33-Ω resistors, reduces BOM count, and maintains <0.25-ns propagation delay for tight DDR timing budgets.	Use Scenario: Isolating DDR data buses during system suspend/resume or multi-bank memory refresh cycles. IC Role / Device Role / Timing Role: OE-controlled high-impedance barrier between controller and SDRAM banks to prevent contention and leakage. Use Value: Enables partial-power-down via I_off, cutting standby current by >90% versus always-on buffers while retaining fast enable/disable times (1.4–4.8 ns).
Memory Subsystem Signal Conditioning	DDR Clock/Data Path Matching
Use Scenario: Compensating for trace-length mismatches between parallel DDR data lines on multilayer PCBs. IC Role / Device Role / Timing Role: Low-r_on FET switch inserted in series with individual DQ lines to equalize RC delays. Use Value: Matches propagation delay across all 10-bit lanes within ±0.1 ns, meeting DDR setup/hold window requirements.	Use Scenario: Routing differential DQS strobes alongside single-ended DQ signals in space-constrained DDR modules. IC Role / Device Role / Timing Role: Flow-through pinout allows DQS and DQ traces to run parallel without vias or layer changes. Use Value: Reduces inter-layer capacitance and crosstalk by 40%, improving eye diagram opening at 200 Mbit/s.

DDR SDRAM Memory Interface

High-Speed Bus Isolation

Use Scenario: Interfacing a memory controller to DDR SDRAM chips in embedded computing or networking equipment.

IC Role / Device Role / Timing Role: Bidirectional bus switch replacing series termination resistors on DQ/DQS lines while preserving signal integrity at 200 Mbit/s.

Use Value: Eliminates 20 discrete 22–33-Ω resistors, reduces BOM count, and maintains <0.25-ns propagation delay for tight DDR timing budgets.

Use Scenario: Isolating DDR data buses during system suspend/resume or multi-bank memory refresh cycles.

IC Role / Device Role / Timing Role: OE-controlled high-impedance barrier between controller and SDRAM banks to prevent contention and leakage.

Use Value: Enables partial-power-down via I_off, cutting standby current by >90% versus always-on buffers while retaining fast enable/disable times (1.4–4.8 ns).

Memory Subsystem Signal Conditioning

DDR Clock/Data Path Matching

Use Scenario: Compensating for trace-length mismatches between parallel DDR data lines on multilayer PCBs.

IC Role / Device Role / Timing Role: Low-r_on FET switch inserted in series with individual DQ lines to equalize RC delays.

Use Value: Matches propagation delay across all 10-bit lanes within ±0.1 ns, meeting DDR setup/hold window requirements.

Use Scenario: Routing differential DQS strobes alongside single-ended DQ signals in space-constrained DDR modules.

IC Role / Device Role / Timing Role: Flow-through pinout allows DQS and DQ traces to run parallel without vias or layer changes.

Use Value: Reduces inter-layer capacitance and crosstalk by 40%, improving eye diagram opening at 200 Mbit/s.

Equivalent & Alternatives

The following parts are listed as comparable options for similar bus-switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SN74CBTLV3857DWR	SOIC-24 package (DW), higher θ_JA (46°C/W vs. 61°C/W), same electrical specs	Better thermal performance in low-airflow industrial enclosures; larger footprint limits high-density DDR layouts	Choose for cost-sensitive, non-space-constrained designs where thermal headroom exceeds 15°C
SN74CBTLV3857PWR	TSSOP-24 package (PW), 88°C/W θ_JA, identical r_on and timing specs	Smaller footprint than DBQ but lower thermal efficiency; preferred for compact consumer DDR modules	Choose when board area is critical and ambient temperature stays below 65°C

Compared with SN74CBTLV3857DWR and SN74CBTLV3857PWR, the 74CBTLV3857DBQRE4 offers optimal balance of thermal resistance (61°C/W), compact QSOP size, and flow-through pinout-making it the preferred choice for high-density, thermally managed DDR memory interfaces requiring minimal PCB real estate and reliable 200-Mbit/s operation.

Availability

74CBTLV3857DBQRE4 is available at Aetrix Electronics and suitable for DDR SDRAM memory interfaces, high-speed bus isolation, and memory subsystem signal conditioning requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for 74CBTLV3857DBQRE4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and logic solutions, with over 50 years of innovation in high-speed interface and memory technologies.

The 74CBTLV3857DBQRE4 belongs to TI's CBTLV logic family, engineered specifically for DDR memory subsystems requiring ultra-low on-resistance, SSTL-compatible control, and I_off-enabled power management.

FAQ

What is the function of VREF on the 74CBTLV3857DBQRE4?

VREF sets the reference voltage (0.38 × V_CC) used to define AC and DC thresholds for the OE input. It ensures the 74CBTLV3857DBQRE4 correctly interprets SSTL_2 logic levels across temperature and voltage variations, enabling reliable enable/disable control in DDR memory systems where timing margins are tight.

Does the 74CBTLV3857DBQRE4 support partial-power-down operation?

Yes, the 74CBTLV3857DBQRE4 supports partial-power-down via its I_off feature. When V_CC is disconnected, the 74CBTLV3857DBQRE4 blocks current backflow from live I/Os into the unpowered device, preventing damage and ensuring isolation-critical for DDR systems implementing dynamic power gating.

What is the purpose of the 10-kΩ pulldown resistors on the B port of the 74CBTLV3857DBQRE4?

The 10-kΩ pulldown resistors on the B port of the 74CBTLV3857DBQRE4 ensure a defined low state on SDRAM-side I/Os when unconnected or during power-up/down sequences. This prevents floating inputs that could cause false triggering or increased EMI in DDR memory interfaces, especially during initialization or standby modes.

Can the 74CBTLV3857DBQRE4 replace series termination resistors in DDR applications?

Yes, the 74CBTLV3857DBQRE4's on-state resistance (7–13 Ω at V_CC = 3 V) is specifically designed to replace discrete 22–33-Ω series termination resistors in SSTL_2 DDR data paths. This integration simplifies layout, reduces component count, and maintains signal integrity at 200 Mbit/s without added propagation delay.

What is the maximum operating temperature range for the 74CBTLV3857DBQRE4?

The 74CBTLV3857DBQRE4 is rated for operation from −40°C to +85°C ambient temperature. This industrial-grade range supports deployment in embedded computing, networking, and industrial DDR memory systems where thermal management must accommodate extended environmental conditions without derating.

74CBTLV3857DBQRE4 Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: 74CBTLV

Package/Case:: 24-SSOP (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Type:: Bus Switch

Circuit:: 10 x 1:1

Independent Circuits:: 1

Current - Output High, Low:: -

Voltage Supply Source:: Single Supply

Voltage - Supply:: 3V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 24-SSOP

74CBTLV3857DBQRE4 FAQ

1.How can I place an order for 74CBTLV3857DBQRE4 through Aetrix?

Please submit a Request for Quotation (RFQ) for 74CBTLV3857DBQRE4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 74CBTLV3857DBQRE4 reliable?

The price and inventory of 74CBTLV3857DBQRE4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 74CBTLV3857DBQRE4 is usually 5 days.

3.What payment methods are accepted for 74CBTLV3857DBQRE4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 74CBTLV3857DBQRE4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 74CBTLV3857DBQRE4?

74CBTLV3857DBQRE4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 74CBTLV3857DBQRE4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 74CBTLV3857DBQRE4?

For technical support, including 74CBTLV3857DBQRE4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 74CBTLV3857DBQRE4 requirements.

6.How does Aetrix verify that 74CBTLV3857DBQRE4 is sourced from the original manufacturer or authorized distributors?

All 74CBTLV3857DBQRE4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 74CBTLV3857DBQRE4 meets industry standards.

7.What is the process for return or replacement of 74CBTLV3857DBQRE4?

All 74CBTLV3857DBQRE4 units undergo pre-shipment inspection (PSI). If there is an issue with 74CBTLV3857DBQRE4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 74CBTLV3857DBQRE4 part is unused and in its original packaging.

Return procedure for 74CBTLV3857DBQRE4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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