Nexperia USA Inc. 74HCT10PW,118

Overview

74HCT10PW,118 from Nexperia is a triple 3-input NAND gate logic IC operating at 4.5–5.5 V supply, delivering TTL-compatible input thresholds (VIH = 2.0 V min, VIL = 0.8 V max), 24 ns typical propagation delay at 5 V/50 pF, and rated for -40 °C to +125 °C industrial temperature range. It implements three independent NAND functions in a TSSOP14 package and is used in digital control logic, address decoding, and enable gating in embedded microcontroller peripherals.

For engineers reviewing the 74HCT10PW,118 datasheet, 74HCT10PW,118 pinout, 74HCT10PW,118 application, or 74HCT10PW,118 equivalent, key selection criteria include TTL-level input compatibility, guaranteed 4 mA output drive strength at VOH ≥ 3.7 V and VOL ≤ 0.4 V, thermal derating behavior above 81 °C, and functional equivalence with 74HC10PW under CMOS-level inputs.

Technical Context

This device integrates three independent 3-input NAND gates sharing a common VCC (Pin 14) and GND (Pin 7). Each gate accepts TTL-level inputs (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and delivers rail-to-rail compatible outputs capable of sinking 4 mA while maintaining VOL ≤ 0.4 V and sourcing 4 mA with VOH ≥ 3.7 V at VCC = 4.5 V.

Its internal structure includes input clamp diodes enabling safe interfacing with voltages exceeding VCC when current-limiting resistors are used. The logic function follows standard NAND truth table: output is LOW only when all three inputs are HIGH; otherwise output is HIGH.

Key Specifications

Pinout & Package

TSSOP14 plastic thin shrink small outline package (SOT402-1); 14 leads; body width 4.4 mm; 0.65 mm lead pitch; exposed pad not present; RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar triple 3-input NAND gate applications.

Compared with 74HC10PW,118, the 74HCT10PW,118 provides guaranteed TTL-level input recognition essential for legacy interface integrity, while SN74LVC10APW offers superior speed and density at the cost of voltage domain isolation - making 74HCT10PW,118 the optimal choice for 5 V industrial control upgrades.

Availability

74HCT10PW,118 is available at Aetrix Electronics and suitable for industrial PLC I/O expansion, microcontroller address decoding, and power supply sequencing control requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 74HCT10PW,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a leading semiconductor manufacturer specializing in high-performance logic, analog, and discrete components, with core expertise in automotive-grade and industrial reliability assurance.

The 74HCT10 belongs to Nexperia's 74HCT logic family, designed specifically to bridge TTL and CMOS domains in industrial and consumer systems requiring robust 5 V logic interoperability and extended temperature operation.

FAQ

Can 74HCT10PW,118 operate reliably at 4.5 V with full output drive specification?

Yes. Per Table 5 and Table 6 of the datasheet, 74HCT10PW,118 is fully specified at VCC = 4.5 V: VOH ≥ 3.7 V (min) at IO = −4.0 mA, VOL ≤ 0.4 V (max) at IO = 4.0 mA, and propagation delay ≤ 30 ns (max) at CL = 50 pF. These parameters are guaranteed across −40 °C to +125 °C.

Does this device support mixed-voltage interfacing, e.g., connecting 3.3 V microcontroller outputs to its inputs?

No. 74HCT10PW,118 requires VIH ≥ 2.0 V (min) for HIGH recognition, but its absolute maximum input voltage is VCC + 0.5 V. Driving it from a 3.3 V source while powered at 5 V violates the VI < VCC + 0.5 V limit and risks latch-up. Use level translators or ensure input sources stay within 0–5.5 V bounds.

What is the thermal derating behavior above 81 °C for the TSSOP14 package?

The TSSOP14 (SOT402-1) package derates total power dissipation linearly at 7.3 mW/K above 81 °C. At 125 °C ambient, Ptot is reduced from 500 mW to 500 − (125 − 81) × 7.3 = 178.8 mW. This must be considered when calculating worst-case junction temperature under sustained load.

Are the three NAND gates electrically isolated from each other internally?

Yes. Each gate (1A/1B/1C→1Y, 2A/2B/2C→2Y, 3A/3B/3C→3Y) operates independently with no shared internal nodes beyond VCC and GND. Crosstalk is limited to substrate coupling and is negligible below 10 MHz; no functional interaction occurs between gates under normal operation.