Nexperia USA Inc. 74LV1T125GXH

Overview

74LV1T125GXH from Nexperia is a single-supply, 5-terminal level-translating buffer/line driver with 3-state output, supporting bidirectional voltage translation (e.g., 1.8 V ↔ 3.3 V) across VCC = 1.6 V to 5.5 V, featuring 5 V tolerant inputs and operation from –40 °C to +125 °C. It enables logic-level bridging between mixed-voltage domains in portable, industrial, and telecom systems.

For engineers reviewing the 74LV1T125GXH datasheet, 74LV1T125GXH pinout, 74LV1T125GXH application, or 74LV1T125GXH equivalent, key selection criteria include input threshold compatibility at multiple VCC levels, 3-state enable timing (ten ≤ 12.9 ns @ 1.8 V), output drive capability (±5.5 mA @ 3.3 V), and X2SON5 package thermal performance (0.8 × 0.8 × 0.32 mm).

Technical Context

The device implements a single-channel CMOS buffer with active-high output enable (OE), where output state (driven HIGH/LOW or high-impedance) is determined solely by OE and input A. Its input threshold scales with VCC - e.g., VIH ≈ 0.65×VCC at 3.3 V - enabling reliable up/down translation without external biasing.

Dynamic behavior is characterized by propagation delay (tpd ≤ 6.4 ns @ 3.3 V, CL = 15 pF), enable/disable times (ten ≤ 12.9 ns, tdis ≤ 14.7 ns @ 1.8 V), and low dynamic power dissipation (CPD = 6.9 pF @ 3.3 V), making it suitable for high-speed, low-power interconnects in space-constrained designs.

Key Specifications

Pinout & Package

X2SON5 (SOT1226-3) package: 0.8 mm × 0.8 mm × 0.32 mm body, no leads, 5 copper terminals on bottom, thermal pad exposed on underside for PCB heat sinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar level-translating buffer applications.

Compared with SN74LVC1T45DBVR and FXMA108MTCX, the 74LV1T125GXH delivers lowest footprint, lowest quiescent current, and deterministic unidirectional control - making it optimal for space-constrained, low-power, fixed-direction signal bridging where minimal added delay and thermal efficiency are critical.

Availability

74LV1T125GXH is available at Aetrix Electronics and suitable for portable electronics, industrial controllers, telecom infrastructure, and notebook subsystems requiring stable component supply across extended temperature ranges and high-volume production cycles.

Supply support for 74LV1T125GXH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, analog, and MOSFET solutions, serving automotive, industrial, and consumer markets with ISO/TS 16949-certified manufacturing.

The 74LV1T series targets space- and power-sensitive mixed-voltage interfacing, delivering single-gate logic functions in ultra-miniature packages for next-generation portable and edge-connected devices.

FAQ

What is the maximum capacitive load the 74LV1T125GXH can drive while maintaining specified timing?

The device is characterized up to 30 pF load capacitance across all VCC levels (1.8 V to 5.0 V), with propagation delay degradation bounded per Table 8 - e.g., tpd increases from 3.8 ns to 4.4 ns at 3.3 V when CL rises from 15 pF to 30 pF. Driving loads >30 pF may violate timing specs and increase ground bounce; external series termination is recommended beyond this limit.

Can the 74LV1T125GXH be used for bidirectional data translation like I²C?

No - it is a unidirectional buffer with fixed A→Y signal flow and separate OE control. For true bidirectional protocols such as I²C, a dedicated auto-direction-sensing translator (e.g., PCA9306) or actively controlled dual-buffer configuration is required. Using this part for bidirectional signals risks bus contention and undefined states.

How does the 5 V tolerance work without damaging the device at VCC = 1.8 V?

The input stage uses gate-protected NMOS transistors with oxide breakdown margin and integrated clamp diodes to GND and VCC. When VI exceeds VCC + 0.5 V, current is shunted via internal protection structures rated to ±20 mA - verified per JESD78 latch-up testing (>250 mA). This allows safe 5 V input application even at 1.8 V supply.

Is the X2SON5 package thermally enhanced, and how should the thermal pad be handled on PCB?

Yes - SOT1226-3 features an exposed thermal pad on the bottom surface. For optimal thermal performance, the pad must be soldered to a minimum 10 mm² copper pour connected to internal GND planes via ≥4 thermal vias (0.3 mm diameter). Without this, junction temperature rise exceeds specifications above 50 mW power dissipation at +125 °C ambient.