Diodes Incorporated 74LVC1G126FW5-7

Overview

74LVC1G126FW5-7 from Diodes Incorporated is a single non-inverting 3-state buffer IC designed for voltage-level shifting and bus isolation in mixed-voltage systems. It operates from 1.65V to 5.5V, supports ±24mA output drive at 3.3V, features IOFF partial-power-down protection, and accepts 5.5V-tolerant inputs - enabling direct interface between 1.8V/2.5V/3.3V logic and 5V peripherals in portable computing and embedded control.

For engineers reviewing the 74LVC1G126FW5-7 datasheet, 74LVC1G126FW5-7 pinout, 74LVC1G126FW5-7 application, or 74LVC1G126FW5-7 equivalent, key selection criteria include its 1.0mm × 1.0mm X1-DFN1010-6 (Type B) package, 3.0ns typical propagation delay at 3.3V, IOFF-enabled power-down isolation, and guaranteed 5.5V input tolerance across full temperature range (–40°C to +125°C).

Technical Context

This device implements a CMOS-based non-inverting buffer with active-high output enable (OE), where Y = A when OE = HIGH and Y = high-impedance when OE = LOW. Its IOFF circuit actively disables both output FETs during power-down, preventing back-current flow even when V_CC = 0V and inputs/outputs are biased up to 5.5V.

Input thresholds scale with V_CC (e.g., VIH ≥ 0.7×V_CC at 4.5–5.5V), ensuring robust noise margin across supply voltages. Output drive strength is specified at multiple V_CC levels (±4mA to ±32mA), with VOL ≤ 0.55V and VOH ≥ V_CC – 0.1V under load - supporting TTL-compatible interfacing and low-voltage logic families simultaneously.

Key Specifications

Pinout & Package

74LVC1G126FW5-7 uses the X1-DFN1010-6 (Type B) package: 1.0mm × 1.0mm × 0.5mm body, 0.35mm pad pitch, 6-terminal land grid with exposed thermal pad (not electrically connected). Pin 1 is marked by chamfered corner per Diodes Inc. outline DWG# DFN1010B-6.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 3-state buffer applications.

Compared with SN74LVC1G126DBVR, the 74LVC1G126FW5-7 reduces board area by 92% and improves thermal resistance margin in dense layouts; versus 74LVC1G125FW5-7, it preserves signal polarity critical for timing-critical control lines like memory address strobes.

Availability

74LVC1G126FW5-7 is available at Aetrix Electronics and suitable for industrial sensor hubs, mobile SoC voltage translation, USB peripheral isolation, and embedded display data bus buffering requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 74LVC1G126FW5-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

This part belongs to the 74LVC logic family - engineered for low-voltage, high-speed, mixed-supply interoperability in portable and industrial electronics, emphasizing power efficiency, small form factor, and robust ESD/latch-up performance.

FAQ

Can 74LVC1G126FW5-7 operate with V_CC = 1.5V?

No. The recommended minimum V_CC is 1.65V per DS32203 Rev. 11–2. At 1.5V, input thresholds become undefined, output drive drops below specification, and timing parameters (e.g., t_PD) exceed guaranteed limits - risking metastability or bus contention in system-level operation.

Is the NC pin (Pin 5) required to be grounded?

No. Pin 5 is internally unconnected and must remain electrically floating. Grounding or connecting it may cause unintended current paths or violate Diodes Inc.'s recommended layout; the datasheet explicitly states "NC" and shows no internal bond wire in the die diagram.

What is the maximum capacitive load this buffer can drive reliably?

Based on C_pd = 19pF and t_PD = 2.0ns (typical at 3.3V), the device is characterized for ≤30pF total load (including trace and input capacitance). Driving >50pF risks exceeding 6.0ns max t_PD, potentially violating setup/hold times in synchronous interfaces like SPI or parallel displays.

Does IOFF protect against back-current when V_CC = 0V and OE = HIGH?

Yes. IOFF activates regardless of OE state when V_CC = 0V. The datasheet specifies IOFF leakage ≤±200μA with VI or VO = 5.5V and V_CC = 0V - confirming that both output FETs are fully disabled, blocking conduction from Y or A pins into the unpowered die.