Diodes Incorporated 74LVCE1G86FZ4-7

Overview

74LVCE1G86FZ4-7 from Diodes Incorporated is a single 2-input positive EXCLUSIVE OR gate in DFN1410 package, operating from 1.4V to 5.5V supply, with ±24mA output drive at 3.3V, 5.5V-tolerant inputs, and IOFF-enabled partial power-down protection-used in voltage level shifting and parity generation circuits.

For engineers reviewing the 74LVCE1G86FZ4-7 datasheet, 74LVCE1G86FZ4-7 pinout, 74LVCE1G86FZ4-7 application, or 74LVCE1G86FZ4-7 equivalent, key selection criteria include mixed-voltage interface capability, sub-3ns propagation delay at 3.3V/15pF, IOFF leakage <10μA, and DFN1410 thermal resistance (θJA = 430°C/W).

Technical Context

This CMOS logic gate implements the Boolean function Y = A ⊕ B using standard totem-pole output architecture. It supports rail-to-rail input tolerance up to 5.5V independent of VCC, enabling direct interfacing between 1.8V, 2.5V, 3.3V, and 5V domains without external level shifters.

The IOFF circuit actively disables outputs during power-down by disconnecting internal paths when VCC = 0V, preventing back-current flow into powered subsystems. Propagation delay is characterized down to 1.5V supply, with tPD ≤ 3.2ns (max) at 3.3V/15pF load.

Key Specifications

Pinout & Package

DFN1410 (1.4mm × 1.0mm, 0.5mm pitch, 6-pin) with exposed thermal pad. Pin 2 and Pin 5 are internally connected (NC designation per datasheet Note 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar XOR gate applications.

Compared with SN74LVC1G86DBVR and 74AUP1G86GW,125, the 74LVCE1G86FZ4-7 uniquely combines 5.5V input tolerance, IOFF, and DFN1410's thermal performance-making it optimal for mixed-voltage industrial interfaces requiring reliability under partial power-down conditions.

Availability

74LVCE1G86FZ4-7 is available at Aetrix Electronics and suitable for voltage level shifting, parity bit generation, and bus repeater applications requiring stable component supply across automotive infotainment, industrial PLC I/O modules, and medical diagnostic equipment.

Supply support for 74LVCE1G86FZ4-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, application-optimized components for power management, signal integrity, and protection.

The 74LVCE1G86 belongs to Diodes' LVCE logic family, engineered for low-voltage mixed-signal interoperability with robust ESD immunity and partial power-down capability-targeting portable, industrial, and communications equipment.

FAQ

Can 74LVCE1G86FZ4-7 operate reliably at 1.4V supply?

Yes. The device is fully specified from 1.4V to 5.5V, with switching characteristics guaranteed down to 1.4V (tpd ≤ 9.1ns at 1.5V/15pF). At 1.4V, output drive drops to ±3mA, sufficient for driving high-impedance CMOS inputs or low-capacitance traces in ultra-low-power sensor nodes.

What is the purpose of the NC pins in the DFN1410 package?

Pins 2 and 5 in the DFN1410 are internally connected but non-functional (NC). They serve no electrical role and must remain unconnected on the PCB. This design accommodates internal die bonding constraints while preserving standardized pin numbering across package variants.

How does IOFF protect the device during partial power-down?

When VCC = 0V, the IOFF circuit disables both PMOS and NMOS paths in the output stage, isolating Y from internal logic and preventing current flow from a live bus (e.g., 3.3V) into the unpowered device. Measured IOFF leakage is ≤±10μA at 5.5V, ensuring safe hot-swap operation.

Is thermal performance adequate in the DFN1410 package?

Yes. With θJA = 430°C/W (on FR-4, 2oz copper, minimal pad layout), the DFN1410 delivers superior thermal efficiency versus SOT25 (204°C/W) for the same power dissipation. At 24mA output drive and 3.3V, typical power is <15mW-resulting in <6.5°C junction rise above ambient.