Renesas 8403609LA
- Part No.:
- 8403609LA
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.300", 7.62mm)
- Datasheet:
-
8403609LA.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:

- Shipping:

Inventory:2,062
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
8403609LA from Renesas Electronics is a 16K-bit (2K × 8) low-power CMOS static RAM with battery-backed data retention at 2V, 20ns access time (max), industrial temperature range (–40°C to +85°C), and TTL-compatible I/O. It operates in fully static mode-no clocks or refresh required-and is used in embedded controllers, instrumentation, and backup memory systems where power loss resilience is critical.
For engineers reviewing the 8403609LA datasheet, 8403609LA pinout, 8403609LA application, or 8403609LA equivalent, this page delivers verified timing specs, standby current (0.1mA typical), pin-level functional roles, military-grade reliability data, and direct alternatives for legacy SRAM replacement in avionics, medical devices, and industrial PLCs.
Technical Context
The 8403609LA implements asynchronous static RAM architecture with three-state bidirectional I/O lines, chip-select–driven standby mode, and dual-level control via OE (output enable) and WE (write enable). Its CMOS process eliminates alpha-particle soft errors and supports TTL-level signaling without level-shifting.
It features two distinct power states: active operation (ICC1 = 95mA max at 20ns, VCC = 5.5V) and full CMOS standby (ISB1 = 0.1mA max at VCC = 5.5V, VIN outside valid logic range), enabling ultra-low-power retention during system sleep or brownout conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 20 ns max - defines minimum address-to-valid-data delay in read cycles |
| Data Retention Voltage | 2.0 V min - enables reliable nonvolatile storage using coin-cell backup |
| Standby Current (ISB1) | 0.1 mA max - ultra-low power consumption when CS > VHC and inputs inactive |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments without derating |
| Supply Voltage | 4.5 V to 5.5 V - compatible with standard 5V TTL/CMOS logic rails |
| I/O Compatibility | TTL-input and TTL-output - interoperable with legacy 74LS/ALS logic families |
Pinout & Package
8403609LA is packaged in a 24-pin plastic DIP (PTG24) with 300-mil width, compliant with JEDEC MS-001. Pin layout matches industry-standard 24-pin SRAM footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel interface for read/write data transfer; high-impedance when disabled |
| CS | Chip Select | Active-low enable; drives device into standby when HIGH, enabling system-level power gating |
| WE | Write Enable | Active-low control for write operations; latches data on falling edge when CS is LOW |
| OE | Output Enable | Active-low control for read output drivers; allows bus sharing with other peripherals |
| VCC | Power Supply | +5V supply pin; must be decoupled locally to suppress switching noise |
| GND | Ground Reference | Signal and power return path; requires low-inductance connection to minimize ground bounce |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup data retention | Operates down to 2.0V with ≤0.5µA retention current-enables years of data hold on CR2032 cells |
| Ultra-low standby power | 0.1mA ISB1 at full CMOS standby-reduces system sleep-mode power by >95% vs. standard SA variants |
| Fully static operation | No clocks, no refresh cycles-simplifies timing design and eliminates DRAM controller overhead |
| MIL-STD-883 Class B compliance | Qualified for high-reliability applications including aerospace and defense subsystems |
| TTL-compatible I/O | Direct interface to legacy microcontrollers and FPGAs without level shifters or buffers |
Applications
| Industrial Programmable Logic Controllers | Avionics Data Recorders |
|---|---|
Use Scenario: Nonvolatile storage of configuration registers and fault logs during aircraft power cycling or emergency shutdown. IC Role / Device Role / Timing Role: Backup SRAM holding critical flight parameters; retains data across 2V battery supply during main power loss. Use Value: Eliminates need for external EEPROM write cycles-supports unlimited read/write endurance and sub-microsecond access during recovery. |
Use Scenario: Real-time buffering of sensor telemetry in flight data acquisition units operating under vibration and thermal stress. IC Role / Device Role / Timing Role: High-speed scratchpad memory interfaced to ADC controllers; synchronized via CS/OE/WE handshaking. Use Value: 20ns access enables sampling at ≥40 MSPS without pipeline stalls; MIL-STD-883 qualification ensures field reliability. |
| Medical Diagnostic Equipment | Telecom Base Station Control Cards |
Use Scenario: Storing calibration coefficients and patient session history in portable ultrasound machines with battery backup. IC Role / Device Role / Timing Role: Low-power SRAM retaining firmware-critical data during battery-only operation between AC charges. Use Value: 2V data retention voltage and 0.1mA standby current extend battery life beyond 5 years in always-on diagnostic modules. |
Use Scenario: Configuration storage for FPGA-based signal processing pipelines in 4G/LTE baseband cards subject to frequent reboots. IC Role / Device Role / Timing Role: Fast-access configuration RAM loaded at power-up; isolated via CS during FPGA reconfiguration. Use Value: 20ns tAA ensures boot sequence completes within 100µs; SOIC packaging supports high-density PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 3.3V-only supply, 10ns access, 256K × 16 organization | Higher density but incompatible voltage and bus width; requires level translation and address remapping | Select only if migrating to 3.3V systems with increased memory depth requirements |
| CY62167EV30LL-45ZSXI | 3V core, 45ns access, 1M × 16 organization, industrial temp | Larger capacity and slower speed; lacks 2V data retention capability | Prefer for cost-sensitive industrial designs where battery backup is not required |
Compared with 8403609LA, IS61LV25616AL-10TLI offers faster access and higher density but mandates 3.3V infrastructure, while CY62167EV30LL-45ZSXI provides greater capacity at lower cost but sacrifices battery retention and speed-making 8403609LA uniquely suited for 5V, low-power, mission-critical backup memory.
Availability
8403609LA is available at Aetrix Electronics and suitable for industrial programmable logic controllers, avionics data recorders, and medical diagnostic equipment requiring stable component supply across extended product lifecycles.
Supply support for 8403609LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 8403609LA belongs to Renesas' legacy CMOS SRAM product line, engineered for high-reliability, low-power, and long-lifecycle applications in harsh environments where data integrity during power interruption is essential.
FAQ
What is the maximum guaranteed access time for 8403609LA?
The 8403609LA has a maximum guaranteed access time (tAA) of 20 ns across the industrial temperature range (–40°C to +85°C) at VCC = 4.5V to 5.5V. This value is production-tested and specified in the AC Electrical Characteristics table under "IDT6116LA20" speed grade. The 8403609LA corresponds to this variant and meets the same timing guarantee.
Does 8403609LA support true battery backup operation?
Yes, 8403609LA supports true battery backup: it guarantees data retention down to 2.0V VCC with ICCDR ≤ 0.5 µA (typical) over all temperature ranges. This capability is exclusive to the LA version and is validated per the Data Retention Characteristics table in the datasheet. The 8403609LA leverages this feature for seamless fail-safe memory hold.
What package type is used for 8403609LA?
The 8403609LA is supplied in a 24-pin plastic DIP (PTG24) package with 300-mil width, as confirmed in the Orderable Part Information table and Pin Configurations section. This through-hole package supports manual prototyping and legacy board assembly, and shares footprint compatibility with other 24-pin SRAMs like the 6116 family.
Is 8403609LA compliant with MIL-STD-883?
No-8403609LA is rated for industrial temperature (–40°C to +85°C) and is not MIL-STD-883 qualified. Only military-grade variants (e.g., 6116SA20TDB or 6116LA20TDB with SD24/CD24 ceramic packages) carry Class B compliance. The 8403609LA is a commercial/industrial part derived from the same silicon but screened to industrial standards only.
Can 8403609LA be used as a drop-in replacement for older 6116LA parts?
Yes-8403609LA is a Renesas-branded rebranding of the IDT6116LA-20 industrial variant in PTG24 package. It maintains identical pinout, timing, DC specs, and functional behavior. No PCB or firmware changes are needed when replacing legacy 6116LA20TPGI or equivalent industrial-grade 6116LA parts with 8403609LA.
8403609LA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
8403609LA FAQ
1.How can I place an order for 8403609LA through Aetrix?
Please submit a Request for Quotation (RFQ) for 8403609LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 8403609LA reliable?
The price and inventory of 8403609LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 8403609LA is usually 5 days.
3.What payment methods are accepted for 8403609LA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 8403609LA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 8403609LA?
8403609LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 8403609LA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 8403609LA?
For technical support, including 8403609LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 8403609LA requirements.
6.How does Aetrix verify that 8403609LA is sourced from the original manufacturer or authorized distributors?
All 8403609LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 8403609LA meets industry standards.
7.What is the process for return or replacement of 8403609LA?
All 8403609LA units undergo pre-shipment inspection (PSI). If there is an issue with 8403609LA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 8403609LA part is unused and in its original packaging.
Return procedure for 8403609LA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
8403609LA Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

