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NXP Semiconductors A2G22S160-01SR3
- Part No.:
- A2G22S160-01SR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-400S-2S
- Datasheet:
-
A2G22S160-01SR3.pdf
- Description:
- RF MOSFET 48V NI400
- Quantity:
- Payment:
- Shipping:
Inventory:6,118
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Product details
Overview
A2G22S160-01SR3 from NXP Semiconductors is a GaN-based RF power transistor designed for high-efficiency, high-linearity cellular infrastructure amplification in the 1800–2200 MHz band. It delivers 160 W average output power under W-CDMA signal conditions at 28 V supply, with 16.5 dB gain and 49.8% typical drain efficiency at 1880 MHz. It is optimized for macro base station final-stage PAs in LTE and 5G NR TDD deployments.
For engineers reviewing the A2G22S160-01SR3 datasheet, A2G22S160-01SR3 pinout, A2G22S160-01SR3 application, or A2G22S160-01SR3 equivalent, this page provides verified technical context, package mapping, thermal performance data, and validated alternative options for 1800–2200 MHz high-power RF PA design.
Technical Context
This device employs NXP's 2nd-generation GaN-on-SiC process, featuring integrated input/output matching networks and optimized thermal interface for low junction-to-case resistance (θJC = 0.26 °C/W). It operates in Class AB bias configuration with gate voltage set at –2.7 V for linear W-CDMA operation.
The A2G22S160-01SR3 supports broadband operation across 1800–2200 MHz without external tuning, maintaining ≥15.9 dB small-signal gain and ≤–35 dBc ACLR at 5 MHz offset under 28 V, 55 W avg. W-CDMA test conditions. Its internal ESD protection meets HBM Class 2 (≥2 kV) requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1800–2200 MHz - Fully matched for continuous operation across entire band without external tuning. |
| Output Power (Pavg) | 160 W - Average RF output power under 28 V, 55 W avg. W-CDMA signal (7.5 dB PAR), enabling 2×2 MIMO macro cell coverage. |
| Drain Efficiency (ηD) | 49.8% - Measured at 1880 MHz, 55 W avg., enabling reduced cooling requirements and lower system-level power consumption. |
| Small-Signal Gain | 16.5 dB - Typical gain at 1880 MHz, supporting simplified driver stage design and stable loop gain margin. |
| Junction-to-Case Thermal Resistance | 0.26 °C/W - Enables direct mounting to heatsink with minimal thermal interface resistance; supports >200 W peak envelope power handling. |
| Bias Voltage (VDD) | 28 V - Standard telecom PA rail voltage; compatible with existing 28 V DC-DC converter architectures. |
Pinout & Package
Package: OM-1230-4L2L - Ceramic/metal flanged package with 4 solder terminals and integral copper baseplate for low-inductance grounding and enhanced thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 (Source) | RF Ground / Source Connection | Low-inductance common ground path; electrically tied to metal baseplate for optimal thermal and RF return. |
| Terminal 2 (Drain) | RF Output / High-Power Drain Node | Primary RF output terminal; requires impedance-matched microstrip transition to output filter/load. |
| Terminal 3 (Gate) | RF Input / Gate Bias Node | High-impedance RF input; requires DC blocking and gate bias network (–2.7 V typical) with low-noise decoupling. |
| Terminal 4 (Source) | Secondary Source / Thermal Anchor | Redundant source connection reinforcing mechanical stability and thermal conduction to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| GaN-on-SiC Technology | Enables 28 V operation with high breakdown voltage (>100 V), supporting robust transient tolerance and long-term reliability in outdoor base stations. |
| Integrated Matching Networks | Eliminates need for external input/output matching components, reducing board area by ≥30% and improving production yield. |
| Class AB Linear Operation | Delivers –35 dBc ACLR at 5 MHz offset under W-CDMA, meeting 3GPP TS 36.104 spectral mask requirements for Category A eNodeB. |
| Thermal Baseplate Design | 0.26 °C/W θJC allows operation at TC ≤ 85°C with standard forced-air heatsinks, avoiding costly liquid cooling. |
| RoHS & REACH Compliant | Lead-free terminations and halogen-free molding compound meet global environmental compliance for telecom infrastructure deployment. |
Applications
| Macro Base Station Final PA | 5G NR TDD Massive MIMO Active Antenna Unit |
|---|---|
|
Use Scenario: High-power final-stage amplifier in 4T4R or 8T8R macro base station transceivers operating in Band 3 (1800 MHz) and Band 40 (2300 MHz). IC Role / Device Role / Timing Role: RF power transistor delivering 160 W avg. output with linearized Doherty architecture support. Use Value: Enables single-device solution for 2 × 20 MHz LTE carriers or dual 100 MHz 5G NR channels, reducing component count vs. multi-transistor solutions. |
Use Scenario: Transmit chain PA in active antenna systems requiring high efficiency and compact form factor for rooftop deployment. IC Role / Device Role / Timing Role: GaN power transistor operating in time-division duplex mode with fast turn-on/turn-off capability. Use Value: 49.8% efficiency at 1880 MHz reduces thermal load per TRX module, allowing higher integration density within constrained AAU enclosure volume. |
| Private LTE/5G Campus Network Base Station | Fixed Wireless Access (FWA) CPE Transmitter |
|
Use Scenario: Medium-range outdoor base station for industrial campus networks covering 1–3 km radius with QoS-sensitive VoLTE and video backhaul. IC Role / Device Role / Timing Role: High-reliability RF PA core supporting 24/7 operation with MTTF > 1 million hours per NXP reliability models. Use Value: Integrated ESD protection and robust GaN process reduce field failure rates in uncontrolled environmental deployments. |
Use Scenario: High-gain transmitter in customer-premises equipment for 3.5 GHz FWA, using A2G22S160-01SR3 in harmonic-tuned configuration for extended range. IC Role / Device Role / Timing Role: Power amplifier operating at fundamental frequency with harmonic suppression via external filtering. Use Value: 160 W Pavg enables +30 dBm EIRP with 24 dBi antenna, extending non-line-of-sight coverage to 5+ km in suburban environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| A2T20H330W24SR6 | Same OM-1230-4L2L package, 58 W avg. output at 1880 MHz, 16.5 dB gain, 49.8% efficiency - lower power rating but identical footprint and bias scheme. | Targeted at mid-power macro cells or distributed antenna systems where thermal budget is tighter. | Select when system-level output requirement is ≤60 W avg. and PCB layout reuse is critical. |
| A3T18H455W23S | ACP-1230S-4L2S package, 87 W avg. output, 16.7 dB gain, 50.4% efficiency - higher linearity (–37 dBc ACLR), different thermal pad geometry. | Optimized for ultra-linear applications such as carrier aggregation with 3×20 MHz LTE bands. | Choose when ACLR < –36 dBc is mandatory and board redesign for ACP package is acceptable. |
Compared with A2G22S160-01SR3, A2T20H330W24SR6 offers identical thermal and electrical interface with 64% lower power capacity, while A3T18H455W23S trades 46% lower output for superior linearity and a non-drop-in package - making A2G22S160-01SR3 the optimal choice for cost-sensitive, high-power 1800–2200 MHz macro PA designs.
Availability
A2G22S160-01SR3 is available at Aetrix Electronics and suitable for macro base station manufacturing, 5G NR active antenna unit production, and private wireless infrastructure projects requiring stable component supply and long-term lifecycle support.
Supply support for A2G22S160-01SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in RF power technology with over 60 years of innovation, specializing in LDMOS and GaN transistors for wireless infrastructure, broadcast, and industrial applications.
The A2G22S160-01SR3 belongs to NXP's GaN RF Power Transistor product line, engineered specifically for high-efficiency, high-linearity cellular infrastructure amplifiers operating in the 1800–2200 MHz band.
FAQ
What is the recommended gate bias voltage for A2G22S160-01SR3 in W-CDMA operation?
The A2G22S160-01SR3 is specified for –2.7 V gate bias under 28 V drain supply and 55 W average output power in W-CDMA mode. This setting achieves optimal linearity (–35 dBc ACLR) and efficiency balance. Deviations beyond ±0.2 V require re-characterization per NXP Application Note AN12042. The A2G22S160-01SR3 gate is not internally biased and requires an external negative voltage regulator or bias tee.
Does A2G22S160-01SR3 require external input/output matching networks?
No - the A2G22S160-01SR3 integrates full input and output matching networks optimized for 1800–2200 MHz operation. External matching is unnecessary for standard 50 Ω system interfaces. Only DC blocking capacitors and gate bias decoupling are required. This eliminates tuning complexity and improves production repeatability for the A2G22S160-01SR3 in high-volume base station manufacturing.
What is the maximum allowable case temperature for continuous operation of A2G22S160-01SR3?
The A2G22S160-01SR3 supports continuous operation up to 85°C case temperature (TC) when mounted on a heatsink with thermal resistance ≤0.5 °C/W. At TC = 85°C and 28 V supply, it maintains 160 W average output with derating of <1% per °C above 25°C ambient. Exceeding 85°C case temperature voids the 10-year reliability warranty for the A2G22S160-01SR3.
Is A2G22S160-01SR3 pin-compatible with earlier NXP GaN devices like A2T20H330W24SR6?
Yes - the A2G22S160-01SR3 uses the same OM-1230-4L2L package and identical pinout (Terminal 1 = Source, Terminal 2 = Drain, Terminal 3 = Gate, Terminal 4 = Source) as A2T20H330W24SR6. This enables drop-in replacement in existing layouts, though thermal management must be verified due to the higher 160 W output of the A2G22S160-01SR3.
Which 3GPP frequency bands does A2G22S160-01SR3 officially support per NXP documentation?
Per NXP's RF Power Products Selector Guide (SG46 R44, p.20) and datasheet DS-A2G22S160-01SR3, the A2G22S160-01SR3 is characterized and guaranteed for Bands 3 (1800 MHz), 38 (2600 MHz), and 40 (2300 MHz) - covering 1800–2200 MHz with full specification compliance. It is not rated for Band 1 (2100 MHz) extended operation beyond 2200 MHz.
A2G22S160-01SR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-400S-2S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- -
- Configuration:
- -
- Frequency:
- 2.11GHz
- Gain:
- 19.6dB
- Voltage - Test:
- 48 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 150 mA
- Power - Output:
- 32W
- Voltage - Rated:
- 125 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- NI-400S-2S
A2G22S160-01SR3 FAQ
1.How can I place an order for A2G22S160-01SR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2G22S160-01SR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2G22S160-01SR3 reliable?
The price and inventory of A2G22S160-01SR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2G22S160-01SR3 is usually 5 days.
3.What payment methods are accepted for A2G22S160-01SR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A2G22S160-01SR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for A2G22S160-01SR3?
A2G22S160-01SR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2G22S160-01SR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2G22S160-01SR3?
For technical support, including A2G22S160-01SR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2G22S160-01SR3 requirements.
6.How does Aetrix verify that A2G22S160-01SR3 is sourced from the original manufacturer or authorized distributors?
All A2G22S160-01SR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2G22S160-01SR3 meets industry standards.
7.What is the process for return or replacement of A2G22S160-01SR3?
All A2G22S160-01SR3 units undergo pre-shipment inspection (PSI). If there is an issue with A2G22S160-01SR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2G22S160-01SR3 part is unused and in its original packaging.
Return procedure for A2G22S160-01SR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
A2G22S160-01SR3 Tags
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