NXP Semiconductors A2G22S190-01SR3

Overview

A2G22S190-01SR3 from NXP Semiconductors is a 36 W average RF power GaN HEMT transistor designed for cellular base station amplifiers operating in the 1800–2200 MHz band. It delivers 17.3 dB typical power gain, 37.2% drain efficiency, and –33.2 dBc ACPR at 1990 MHz under W-CDMA signal conditions (48 V, 200 mA I_DQ, 9.9 dB PAR). Its NI-400S-2S air-cavity package supports high-power Doherty PA architectures.

For engineers reviewing the A2G22S190-01SR3 datasheet, A2G22S190-01SR3 pinout, A2G22S190-01SR3 application, or A2G22S190-01SR3 equivalent, key selection criteria include guaranteed 1805–2170 MHz broadband performance, GaN-specific bias sequencing requirements, thermal resistance of 1.6 °C/W (IR), and compatibility with digital predistortion systems for LTE/5G macrocell infrastructure.

Technical Context

This depletion-mode GaN transistor operates at 48 V DC supply with quiescent gate voltage V_GS(Q) = –3.0 V (typ) and drain current I_DQ = 200 mA. It is internally input-matched and characterized for single-carrier W-CDMA signals with 9.9 dB peak-to-average ratio at 0.01% CCDF probability.

The device features high terminal impedances optimized for broadband Doherty configurations and supports pulsed CW operation up to 234 W with no degradation under 10:1 VSWR load mismatch at 55 V. Its channel temperature limit is 275 °C, with MTTF estimation enabled via R_θCHC(FEA) = 2.1 °C/W.

Key Specifications

Pinout & Package

Package: NI-400S-2S - air-cavity ceramic/metal flanged package with solderable baseplate, rated for high-power RF operation and thermal cycling in outdoor base stations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with CGHV1J006P and AFGA22000W, the A2G22S190-01SR3 occupies a precise mid-power niche: it delivers optimal thermal efficiency (1.6 °C/W) and linearity (–33.2 dBc ACPR) specifically for 36 W LTE macrocell deployments where board space, cooling, and DPD convergence speed are constrained.

Availability

A2G22S190-01SR3 is available at Aetrix Electronics and suitable for cellular base station transceivers, 5G massive MIMO active antenna units, and private LTE network eNodeBs requiring stable component supply across multi-year infrastructure deployment cycles.

Supply support for A2G22S190-01SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with headquarters in Eindhoven, Netherlands.

The A2G22S190-01SR3 belongs to NXP's AIRFAST RF Power GaN transistor family, engineered specifically for energy-efficient, thermally robust, and digitally linearizable power amplifiers in 4G/5G cellular infrastructure equipment.

FAQ

What is the correct biasing sequence for the A2G22S190-01SR3?

The A2G22S190-01SR3 is a depletion-mode GaN transistor requiring strict bias sequencing to prevent damage. To turn ON: first set V_GS to –5 V, then apply 48 V V_DS, increase V_GS to achieve 200 mA I_DQ, and finally apply RF input. To turn OFF: remove RF, reduce V_GS to –5 V, reduce V_DS to 0 V (with sufficient settling time), then disable V_GS. This sequence is mandatory for reliable operation of the A2G22S190-01SR3.

Does the A2G22S190-01SR3 support 5G NR signals?

Yes, the A2G22S190-01SR3 supports 5G NR signals within its specified 1800–2200 MHz band, provided the signal's PAR and bandwidth remain within validated test conditions (e.g., ≤9.9 dB PAR, ≤100 MHz instantaneous bandwidth). Its –32.6 dBc ACPR at 2170 MHz and 0.7 dB gain flatness over 365 MHz enable compliant operation with 5G NR FR1 n1/n3/n25/n30 allocations when used with appropriate DPD.

What is the maximum junction temperature rating for the A2G22S190-01SR3?

The A2G22S190-01SR3 has an operating junction temperature range of –55°C to +225°C, with an absolute maximum channel temperature of 275°C. Thermal design must use R_θCHC(FEA) = 2.1 °C/W for reliability modeling, and MTTF can be estimated using T_channel in the formula MTTF = 10[–10.3 + 8260/(T + 273)]. This thermal specification is integral to the A2G22S190-01SR3's suitability for outdoor macrocell deployments.

Is the A2G22S190-01SR3 pin-compatible with other NI-400S-2S GaN transistors?

No, pin compatibility cannot be assumed across NI-400S-2S devices. While the A2G22S190-01SR3 uses the NI-400S-2S package with pins 1 (RFin/V_GS) and 2 (RFout/V_DS), internal die layout, gate structure, and bias requirements differ significantly between models. Substitution requires full validation of matching network, thermal interface, and bias circuitry - the A2G22S190-01SR3 must be treated as a unique design point.

What does the "R3" suffix indicate in A2G22S190-01SR3?

The "R3" suffix in A2G22S190-01SR3 denotes tape-and-reel packaging: 250 units per reel, 32 mm tape width, and 13-inch reel diameter. This format is optimized for automated SMT placement in high-volume RF power amplifier module manufacturing. The base part number A2G22S190-01S remains functionally identical; only the packaging differs - a critical detail for procurement and production planning of the A2G22S190-01SR3.