NXP Semiconductors A2G22S251-01SR3

Overview

A2G22S251-01SR3 from NXP Semiconductors (formerly Freescale) is a 48 V, depletion-mode GaN HEMT RF power transistor optimized for cellular base station amplifiers in the 1805–2200 MHz band. It delivers 48 W average output power under W-CDMA single-carrier conditions (PAR = 9.9 dB), with 17.7 dB typical power gain and 37.5% drain efficiency at 2170 MHz. Its NI-400S-2S package supports high-power Doherty amplifier architectures.

For engineers reviewing the A2G22S251-01SR3 datasheet, A2G22S251-01SR3 pinout, A2G22S251-01SR3 application, or A2G22S251-01SR3 equivalent, this page provides verified performance data across 1805–2170 MHz, thermal resistance metrics (R_θJC = 1.3 °C/W IR), ESD ratings (HBM Class 2), gate threshold voltage (–3.0 V typ), and load-pull impedance tuning points for P1dB and P3dB optimization.

Technical Context

This GaN transistor operates in depletion mode requiring negative gate bias (V_GS(Q) = –3.1 V typ at I_DQ = 200 mA) and features internally input-matched design. Its high terminal impedances enable broadband operation without external matching networks across the 365 MHz bandwidth.

The device is characterized for digital predistortion (DPD) systems and Doherty configurations, with measured AM/PM distortion of –16.9° max and ACPR of –33.2 dBc at 48 W avg. Output power compression is specified at P1dB = 158 W and P3dB = 195 W under CW conditions.

Key Specifications

Pinout & Package

Package: NI-400S-2S - ceramic/metal flanged package with solderable baseplate, rated for >150 °C case temperature and optimized for RF thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with CGHV1J005D and MMRF1022, the A2G22S251-01SR3 offers superior efficiency (37.5% vs. ≤32%) and power density (48 W avg. in NI-400S-2S) for macrocell applications in the 1805–2200 MHz band, while maintaining compatibility with DPD-based linearization and Doherty topologies.

Availability

A2G22S251-01SR3 is available at Aetrix Electronics and suitable for macrocell base stations, MIMO radio units, remote radio heads, and active antenna systems requiring stable component supply and long-term lifecycle support.

Supply support for A2G22S251-01SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communications markets.

The A2G22S251-01SR3 belongs to the AIRFAST® GaN RF power transistor product line, engineered specifically for energy-efficient, high-linearity cellular infrastructure amplifiers operating in licensed sub-6 GHz bands.

FAQ

What is the correct biasing sequence for the A2G22S251-01SR3?

The A2G22S251-01SR3 is a depletion-mode GaN HEMT requiring strict turn-on/off sequencing. To avoid damage: first set V_GS to pinch-off (–5 V), then apply V_DS = 48 V, then adjust V_GS to achieve I_DQ = 200 mA, and finally apply RF input. Turn-off follows reverse order: remove RF, reduce V_GS to –5 V, reduce V_DS to 0 V, then disable V_GS. This sequence is critical for reliability of the A2G22S251-01SR3.

Does the A2G22S251-01SR3 require external input matching?

No, the A2G22S251-01SR3 is internally input-matched across its specified 1805–2170 MHz band, eliminating the need for external input matching networks in standard 50 Ω systems. This simplifies PCB layout and improves broadband consistency. The A2G22S251-01SR3 datasheet confirms internal matching in Table 5 and Figure 1 layout notes.

What thermal interface material is recommended for the A2G22S251-01SR3 NI-400S-2S package?

NXP recommends thermally conductive epoxy or solder attachment for the A2G22S251-01SR3 flange-to-heatsink interface to achieve the specified R_θJC = 1.3 °C/W (IR). Thermal paste alone is insufficient; mechanical clamping with high-conductivity interface materials (e.g., Henkel Ablestik QMI510) is required to maintain junction temperature below +225 °C under full 48 W avg. load. This applies directly to the A2G22S251-01SR3 in production designs.

Can the A2G22S251-01SR3 be used outside the 1805–2200 MHz band?

No - the A2G22S251-01SR3 is characterized and performance-guaranteed only within 1805–2200 MHz. Operation outside this band is not validated; gain, efficiency, and linearity degrade significantly beyond 1805 MHz or 2200 MHz. The A2G22S251-01SR3 datasheet explicitly states "no guarantee of performance" for frequencies outside this range.

What is the maximum continuous drain current rating for the A2G22S251-01SR3?

The A2G22S251-01SR3 does not specify a maximum continuous drain current (I_D) rating; instead, it defines safe operating area by V_DS, power dissipation, and junction temperature limits. Absolute maximum V_DS is 125 Vdc, and maximum junction temperature is +225 °C. Continuous operation must stay within the SOA curve defined by P_D ≤ (T_J – T_C)/R_θJC, where R_θJC = 1.3 °C/W. This constraint governs thermal design for the A2G22S251-01SR3.