NXP Semiconductors A2G26H281-04SR3

Overview

A2G26H281-04SR3 from NXP Semiconductors is a 50 W average asymmetrical Doherty RF power GaN transistor designed for cellular base station amplifiers operating in the 2496–2690 MHz band. It delivers 14.3 dB typical power gain, 61.9% drain efficiency at 2575 MHz, and –29.1 dBc ACPR under W-CDMA single-carrier conditions (9.9 dB PAR, 0.01% CCDF), with guaranteed performance only within its specified frequency range.

For engineers reviewing the A2G26H281-04SR3 datasheet, A2G26H281-04SR3 pinout, A2G26H281-04SR3 application, or A2G26H281-04SR3 equivalent, this device requires attention to GaN-specific bias sequencing, thermal management via heatsink mounting, and impedance-matched Doherty architecture implementation - not generic RF amplifier design practices.

Technical Context

The A2G26H281-04SR3 integrates two GaN HEMT dies (Carrier and Peaking) in a single NI-780S-4L air-cavity package, configured as an internally input-matched asymmetrical Doherty amplifier. Its functional test conditions specify VDD = 48 Vdc, IDQA = 150 mA, and VGSB = –5.4 Vdc, with characterization performed in NXP's production test fixture using a 50 Ω system.

It supports broadband operation across 2496–2690 MHz with 0.35 dB gain flatness over 60 MHz at 50 W avg output, and withstands 10:1 VSWR load mismatch at 55 Vdc and 275 W pulsed CW without degradation. Thermal resistance is 1.0 °C/W (IR measurement) from active die surface to case when soldered to heatsink.

Key Specifications

Pinout & Package

The A2G26H281-04SR3 is housed in the NI-780S-4L air-cavity ceramic package (12.7 mm × 12.7 mm × 4.06 mm), designed for direct heatsink mounting with solder attachment per AN1908. The package features four leads with defined RF and DC terminal roles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with QPD1025 and AFGA26025, the A2G26H281-04SR3 provides higher thermal efficiency (1.0 °C/W), integrated asymmetrical Doherty topology, and guaranteed 50 W avg performance across the full 2496–2690 MHz band - making it optimal for thermally constrained macro base station final stages.

Availability

A2G26H281-04SR3 is available at Aetrix Electronics and suitable for cellular infrastructure, macro base station power amplifiers, and remote radio units requiring stable component supply, long-term lifecycle support, and traceable GaN transistor sourcing.

Supply support for A2G26H281-04SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies since the acquisition of Freescale.

The A2G26H281-04SR3 belongs to NXP's AIRFAST® GaN portfolio, engineered specifically for high-efficiency, high-linearity cellular base station power amplifiers operating in licensed sub-6 GHz spectrum bands.

FAQ

What is the correct bias sequencing for the A2G26H281-04SR3?

The A2G26H281-04SR3 requires strict GaN depletion-mode bias sequencing to prevent damage. To turn ON: first set VGS to –5 V, then apply VDS = 48 Vdc, increase VGS to achieve IDQA = 150 mA, and finally apply RF input. To turn OFF: remove RF input, reduce VGS to –5 V, reduce VDS to 0 V (allowing full discharge time), then disable VGS. This sequence is mandatory for every A2G26H281-04SR3 power cycle.

Does the A2G26H281-04SR3 require external input matching?

No, the A2G26H281-04SR3 is internally input-matched for 50 Ω systems across 2496–2690 MHz, as confirmed in Table 5 and Figure 1 of the official datasheet. External input matching networks are unnecessary, though output matching must be implemented per the recommended test circuit in Figure 2 to achieve specified gain, efficiency, and ACPR performance for the A2G26H281-04SR3.

What thermal interface material is recommended for A2G26H281-04SR3 mounting?

NXP recommends solder reflow attachment per Application Note AN1908 for the A2G26H281-04SR3, using SnAgCu (SAC305) solder with peak temperature ≤ 245 °C. Conductive epoxy or thermal paste are not qualified alternatives; improper mounting increases R_θJC beyond the specified 1.0 °C/W and risks premature failure under 50 W avg operation.

Can the A2G26H281-04SR3 operate outside its 2496–2690 MHz band?

No - the A2G26H281-04SR3 is characterized and performance-guaranteed only for 2496–2690 MHz. NXP explicitly states there is no guarantee of performance outside this band. Attempting operation at 2100 MHz or 3500 MHz will result in unvalidated gain, efficiency, and linearity, and may violate regulatory compliance for cellular infrastructure deployments using the A2G26H281-04SR3.

What is the maximum junction temperature rating for the A2G26H281-04SR3?

The A2G26H281-04SR3 has an operating junction temperature range of –55 to +225 °C, with an absolute maximum junction temperature (T_MAX) of 275 °C. However, functional operation above 225 °C is not characterized, and operation at T_MAX reduces median time to failure by an order of magnitude. Reliable long-term use of the A2G26H281-04SR3 requires thermal design that maintains T_J ≤ 225 °C under worst-case conditions.