NXP Semiconductors A2G35S160-01SR3

Overview

A2G35S160-01SR3 from NXP Semiconductors (formerly Freescale) is a 32 W average RF power GaN HEMT transistor designed for cellular base station final-stage amplification in the 3400–3600 MHz band. It operates at 48 Vdc, delivers 15.7 dB typical power gain and 36.7% drain efficiency at 3500 MHz under W-CDMA signal conditions with 9.9 dB PAR.

For engineers reviewing the A2G35S160-01SR3 datasheet, A2G35S160-01SR3 pinout, A2G35S160-01SR3 application, or A2G35S160-01SR3 equivalent, key selection criteria include guaranteed broadband performance across 3400–3600 MHz, Doherty amplifier compatibility, digital predistortion readiness, thermal resistance of 1.9 °C/W (IR), and input-matched NI-400S-2S package integration.

Technical Context

This GaN-on-SiC transistor uses depletion-mode operation requiring precise gate bias sequencing: V_GS must be set to pinch-off (≈ –5 V) before applying V_DS, and reversed during shutdown to prevent damage. Its high terminal impedances enable broadband matching without external tuning networks across the full 200 MHz bandwidth.

Characterized exclusively for 3400–3600 MHz operation, the A2G35S160-01SR3 delivers stable gain flatness (0.5 dB), low AM/PM distortion (–15.6° max), and robust load mismatch tolerance-sustaining no degradation at 10:1 VSWR with 153 W pulsed output under overdrive conditions.

Key Specifications

Pinout & Package

The A2G35S160-01SR3 is housed in the NI-400S-2S flanged ceramic/metal overmolded package, optimized for high-frequency RF power applications with integrated thermal vias and solderable baseplate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with CGHV1F025S and QPD1025, the A2G35S160-01SR3 offers the highest guaranteed average output power (32 W) in the 3400–3600 MHz band with factory input matching-reducing design cycle time and improving first-pass yield in 5G n78 base station deployments.

Availability

A2G35S160-01SR3 is available at Aetrix Electronics and suitable for 5G massive MIMO base stations, macro cellular remote radio heads, and private LTE/5G network infrastructure requiring stable component supply and long-term lifecycle support.

Supply support for A2G35S160-01SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial & IoT, mobile, and communication infrastructure markets.

The A2G35S160-01SR3 belongs to NXP's AIRFAST® GaN RF power transistor family, engineered specifically for energy-efficient, high-linearity cellular infrastructure amplifiers operating in licensed sub-6 GHz bands.

FAQ

What is the correct biasing sequence for the A2G35S160-01SR3?

The A2G35S160-01SR3 is a depletion-mode GaN transistor requiring strict bias sequencing to avoid damage. To turn ON: (1) Set V_GS to pinch-off (–5 V), (2) Apply V_DS to 48 V, (3) Adjust V_GS to achieve 190 mA I_DQ, then (4) Apply RF input. To turn OFF: (1) Remove RF, (2) Return V_GS to –5 V, (3) Ramp V_DS to 0 V, (4) Turn off V_GS. This sequence is mandatory for reliable operation of the A2G35S160-01SR3.

Is the A2G35S160-01SR3 suitable for frequencies outside 3400–3600 MHz?

No-the A2G35S160-01SR3 is characterized and performance-guaranteed only for the 3400–3600 MHz band. The datasheet explicitly states there is no guarantee of performance outside this range, and operation at other frequencies may result in degraded gain, efficiency, or linearity. System designs must restrict use of the A2G35S160-01SR3 to its specified 200 MHz bandwidth.

Does the A2G35S160-01SR3 require external input matching?

No-the A2G35S160-01SR3 is internally input-matched to 50 Ω, as confirmed in Table 4 and Figure 7 of the official datasheet. This eliminates the need for external input matching networks in standard 50 Ω test fixtures and reference designs, simplifying layout and improving repeatability. The A2G35S160-01SR3 achieves –16 dB input return loss at 3500 MHz without added components.

What thermal management is required for the A2G35S160-01SR3?

The A2G35S160-01SR3 has an infrared-measured thermal resistance of 1.9 °C/W (junction-to-case). It requires direct thermal coupling to a heatsink via its solderable metal baseplate. For continuous 32 W avg. operation, case temperature must be maintained ≤76°C per AN1955 guidelines. The A2G35S160-01SR3 supports conduction cooling in RRH and macro base station applications without forced air.

Can the A2G35S160-01SR3 be used in Doherty amplifier configurations?

Yes-the A2G35S160-01SR3 is explicitly optimized for Doherty applications, as stated in its features list and validated in Freescale's reference designs. Its high terminal impedances, stable gain flatness (0.5 dB), and symmetric load-pull contours across 3400–3600 MHz enable efficient Doherty combiner implementation. The A2G35S160-01SR3 maintains >36% efficiency in asymmetrical Doherty topologies at back-off power levels.