NXP Semiconductors A2G35S200-01SR3

Overview

A2G35S200-01SR3 from NXP (formerly Freescale) is a 40 W average RF power GaN HEMT transistor designed for cellular base station power amplifiers operating in the 3400–3600 MHz band. It delivers 16.1 dB power gain, 35.3% drain efficiency, and –34.7 dBc ACPR at 3500 MHz under single-carrier W-CDMA conditions (48 V, 291 mA, 40 W avg., PAR = 9.9 dB).

For engineers reviewing the A2G35S200-01SR3 datasheet, A2G35S200-01SR3 pinout, A2G35S200-01SR3 application, or A2G35S200-01SR3 equivalent, key selection criteria include guaranteed 3400–3600 MHz broadband performance, Doherty amplifier compatibility, digital predistortion readiness, and thermal resistance of 1.3 °C/W (IR-measured) for high-reliability macrocell deployments.

Technical Context

This GaN-on-SiC transistor operates in depletion mode and requires precise gate bias sequencing: V_GS must be set to pinch-off (–5 V) before applying V_DS, and reversed during shutdown to prevent device damage. Its internal input matching eliminates external input matching networks across the 3400–3600 MHz band.

The device is characterized for linearized operation with digital predistortion (DPD), exhibiting 1.2 dB gain flatness over 200 MHz bandwidth at 40 W avg. output and –12° AM/PM distortion at P3dB compression across the full band-critical for wideband LTE-A and 5G NR TDD systems.

Key Specifications

Pinout & Package

Package: NI-400S-2S - thermally enhanced ceramic/metal flange-mount package with integrated heat slug, optimized for high-power RF PCB mounting and heatsink interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with QPD1025 and CGHV14800F, the A2G35S200-01SR3 offers optimal balance of proven 3.5 GHz band performance, Doherty-ready impedance profile, and mature manufacturing yield-making it preferred for cost-sensitive, high-volume macro base station programs where 40 W avg. output suffices.

Availability

A2G35S200-01SR3 is available at Aetrix Electronics and suitable for 5G NR TDD macro base stations, LTE-A MIMO remote radio heads, and private 5G campus networks requiring stable component supply and long-term lifecycle support.

Supply support for A2G35S200-01SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power from its Freescale acquisition.

The A2G35S200-01SR3 belongs to the AIRFAST® GaN portfolio, engineered specifically for energy-efficient, high-linearity cellular infrastructure PAs-targeting macrocell, microcell, and active antenna systems operating in licensed sub-6 GHz bands.

FAQ

What is the correct biasing sequence for the A2G35S200-01SR3?

The A2G35S200-01SR3 is a depletion-mode GaN transistor requiring strict gate bias sequencing to avoid catastrophic failure. To turn ON: first set V_GS to –5 V (pinch-off), then apply V_DS = 48 V, then adjust V_GS to achieve I_DQ = 291 mA, and finally apply RF input. To turn OFF: remove RF, reduce V_GS to –5 V, wait for V_DS to decay to 0 V, then disable V_GS. This sequence is mandatory per Freescale AN1955 and applies to every A2G35S200-01SR3 unit.

Does the A2G35S200-01SR3 require external input matching?

No, the A2G35S200-01SR3 is internally input-matched for 50 Ω operation across the entire 3400–3600 MHz band. The datasheet explicitly states "Part internally input matched" and confirms broadband input return loss of –19 dB at 3500 MHz. External input matching components are unnecessary, simplifying PCB layout and reducing insertion loss in the A2G35S200-01SR3 signal path.

What is the maximum junction temperature rating for the A2G35S200-01SR3?

The A2G35S200-01SR3 has an operating junction temperature range of –55 °C to +225 °C, with an absolute maximum junction temperature (T_MAX) of 275 °C. However, operation above 225 °C is not characterized and reduces median time to failure by an order of magnitude. For reliable long-term operation, thermal design must maintain T_J ≤ 225 °C using the specified R_θJC = 1.3 °C/W (IR) value for the A2G35S200-01SR3.

Can the A2G35S200-01SR3 be used outside the 3400–3600 MHz band?

No-the A2G35S200-01SR3 is characterized and performance-guaranteed only for applications operating strictly within the 3400–3600 MHz band. The datasheet explicitly states: "There is no guarantee of performance when this part is used in applications designed outside of these frequencies." Performance metrics such as gain, efficiency, and ACPR are not validated below 3400 MHz or above 3600 MHz for the A2G35S200-01SR3.

What ESD protection level does the A2G35S200-01SR3 provide?

The A2G35S200-01SR3 meets HBM Class 1B (±2 kV), MM Class A, and CDM Class IV per JESD22 standards. These ratings are confirmed in Table 3 of the official datasheet and enable safe automated handling, pick-and-place, and reflow soldering without special ESD mitigation beyond standard Class 1B protocols. This ESD robustness applies specifically to the A2G35S200-01SR3 in its NI-400S-2S package.