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NXP Semiconductors A2I25D025NR1
- Part No.:
- A2I25D025NR1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-270-17 Variant, Flat Leads
- Datasheet:
-
A2I25D025NR1.pdf
- Description:
- RF MOSFET LDMOS 28V TO270-17
- Quantity:
- Payment:
- Shipping:
Inventory:4,083
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Product details
Overview
A2I25D025NR1 from NXP Semiconductors (formerly Freescale) is a dual-path RF LDMOS wideband integrated power amplifier designed for cellular base station Doherty architectures. It operates from 2100–2900 MHz, delivers 3.2 W average output power under W-CDMA modulation at 28 Vdc, achieves 32.5 dB power gain and 20.0% PAE at 2690 MHz, and integrates on-chip 50 Ω input matching with DC blocking for direct RF system integration in macro/micro base station transceivers.
For engineers reviewing the A2I25D025NR1 datasheet, A2I25D025NR1 pinout, A2I25D025NR1 application, or A2I25D025NR1 equivalent, this page provides verified technical context, validated pin functions, confirmed thermal and RF performance metrics, and real-world Doherty amplifier design constraints - all extracted from Freescale's official Rev. 0 (Mar. 2015) technical data and production test documentation.
Technical Context
The A2I25D025NR1 implements a two-stage monolithic LDMOS structure with independent A/B paths, each featuring integrated quiescent current temperature compensation and enable/disable control. Its on-chip matching network eliminates external input matching components across 2100–2900 MHz, while the exposed backside source terminal enables low-inductance heatsink mounting critical for thermal stability at 150 °C case temperature.
Designed explicitly for digital predistortion (DPD) correction, the device supports high linearity with –47.5 dBc ACPR at 2400 MHz and exhibits <0.8 dB gain flatness over 390 MHz bandwidth at 3.2 W avg. output. Its load-pull-optimized Zload (e.g., 9.32 – j9.38 Ω at 2590 MHz for P1dB) confirms suitability for broadband Doherty combiner networks requiring precise impedance synthesis.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2100–2900 MHz: Full operational bandwidth without external tuning; enables single part coverage of LTE Bands 1, 3, 7, 38, 41. |
| Avg. Output Power | 3.2 W @ 28 Vdc, 9.9 dB PAR: Matches typical macro base station uplink channel requirements for multi-carrier W-CDMA/LTE. |
| Power Gain | 32.5 dB @ 2690 MHz: Enables reduced driver stage complexity; sufficient for direct interface with medium-power pre-driver ICs. |
| PAE | 20.0% @ 2690 MHz: Delivers thermally sustainable efficiency in air-cooled macro base station enclosures with 74 °C heatsink temperature. |
| ACPR | –46.8 dBc @ 2690 MHz: Meets 3GPP ACLR mask for 20 MHz LTE channels with DPD applied; validates linearization headroom. |
| Thermal Resistance (Stage 2) | 1.8 °C/W junction-to-case: Supports continuous 3.2 W avg. operation with ≤150 °C case temperature under specified heatsink conditions. |
| Input Matching | On-chip 50 Ω, DC-blocked: Eliminates discrete input matching network; reduces PCB area and insertion loss in front-end module designs. |
Pinout & Package
Package: TO-270WB-17 plastic package with exposed backside source terminal for direct thermal attachment to heatsink. Dimensions per Freescale drawing A2I25D025N Rev. 0.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 7, 15, 16 | GND | RF and DC ground reference for both amplifier paths; electrically tied to exposed backside source terminal. |
| 2, 4 | RFinA / RFinB | Differential RF input ports for Path A and Path B; internally matched to 50 Ω with DC blocking capacitors. |
| 3, 13 | VDS1A / VDS1B | Drain supply for Stage 1 (driver) of each path; requires local 28 Vdc decoupling per Freescale test fixture layout. |
| 5, 12 | RFout1/VDS2A / RFout2/VDS2B | Combined RF output and Stage 2 drain supply node; connects to Doherty combiner output and VDD2 rail. |
| 6, 8, 9, 10, 11, 14 | VGS1A, VGS1B, VGS2A, VGS2B, VBWA, VBWB | Independent gate bias terminals for Stage 1/Stage 2 of each path plus bias voltage inputs for thermal tracking circuitry. |
| 17 | NC | No internal connection; must be left unconnected or grounded per layout guidelines to avoid parasitic coupling. |
Key Features
| Feature | Design Value |
|---|---|
| On-chip 50 Ω input matching | Removes need for external input matching network across 2100–2900 MHz, reducing bill-of-materials and layout sensitivity. |
| Integrated quiescent current temperature compensation | Maintains stable IDQ1(A+B) = 56 mA and IDQ2(A+B) = 136 mA over –30 to +85 °C ambient, enabling consistent DPD model convergence. |
| Doherty-optimized architecture | Independent A/B paths with dedicated VGS and VDS pins allow asymmetric drive and load modulation required for high-efficiency Doherty operation. |
| ESD protection rating | HBM Class 1B (≥500 V), MM Class A, CDM Class II: Ensures robustness during board assembly and field handling without additional protection circuitry. |
| Moisture Sensitivity Level | MSL 3 (260 °C peak reflow): Compatible with standard lead-free PCB assembly processes without baking preconditioning. |
Applications
| Macro Base Station Transceiver | Small Cell Remote Radio Head |
|---|---|
Use Scenario: High-power LTE FDD/TDD uplink transmission in outdoor macro cell sites operating across 2300–2690 MHz bands. IC Role / Device Role / Timing Role: Final-stage Doherty power amplifier delivering 3.2 W avg. output with –47.1 dBc ACPR after DPD correction. Use Value: Single-device coverage of Band 41 (2496–2690 MHz) and Band 7 (2500–2570 MHz) reduces system-level component count and improves thermal uniformity vs. discrete solutions. |
Use Scenario: Compact remote radio head (RRH) for urban small cell deployments requiring high spectral efficiency in constrained thermal envelopes. IC Role / Device Role / Timing Role: Dual-path RF PA core enabling spatially separated Doherty combiner implementation with independent bias control per path. Use Value: On-chip input matching and 1.8 °C/W Stage 2 thermal resistance allow air-cooled operation at 3.2 W avg. without forced convection, reducing system power and noise. |
| Active Antenna System (AAS) Module | 5G NR Sub-6 GHz Test Equipment |
Use Scenario: Integrated active antenna unit with beamforming capability requiring high linearity and thermal stability across 2500–2700 MHz 5G NR n41 band. IC Role / Device Role / Timing Role: Transmit chain PA stage supporting 100 MHz instantaneous bandwidth and 9.9 dB PAR signals with DPD feedback loop. Use Value: <0.8 dB gain flatness over 390 MHz and –9.0° AM/PM distortion enable accurate wideband signal reconstruction in closed-loop beamforming systems. |
Use Scenario: Production test platform for validating 5G NR UE transmitter compliance, requiring repeatable high-linearity RF stimulus generation. IC Role / Device Role / Timing Role: Calibrated RF source amplifier generating known PAR-compressed waveforms for receiver sensitivity and ACLR testing. Use Value: Verified –47.5 dBc ACPR at 2400 MHz and stable 32.0 dB gain across 2300–2600 MHz ensure traceable, low-uncertainty test signal fidelity without external calibration drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFM906S | Single-path LDMOS PA, 2300–2700 MHz, 4.5 W avg., 33.5 dB gain, no on-chip input matching | Requires external input matching network; suited for non-Doherty, higher-output-power applications where layout space permits discrete matching. | Select AFM906S when >3.2 W avg. output is required and board area allows for matching network; not drop-in compatible due to single-path topology and different pinout. |
| MMRF1022 | Monolithic GaN HEMT, 2496–2690 MHz, 4.0 W avg., 31.0 dB gain, 24% PAE, no integrated thermal compensation | Lacks on-chip quiescent current temperature tracking; requires external bias control circuitry for thermal stability over temperature. | Choose MMRF1022 for higher efficiency (24% vs. 20%) in thermally managed environments where external bias control is acceptable; not pin-compatible with A2I25D025NR1. |
Compared with AFM906S and MMRF1022, the A2I25D025NR1 uniquely combines dual-path Doherty topology, on-chip 50 Ω input matching, and integrated thermal tracking in a single TO-270WB-17 package - making it the only option among the three that enables compact, thermally stable, and matching-free Doherty implementations for sub-6 GHz base station transceivers.
Availability
A2I25D025NR1 is available at Aetrix Electronics and suitable for macro base station transceivers, small cell remote radio heads, active antenna systems, and 5G NR test equipment requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for A2I25D025NR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications infrastructure markets, with deep expertise in RF power technology inherited from Freescale.
The A2I25D025NR1 belongs to NXP's Airfast RF LDMOS wideband integrated power amplifier product line, engineered specifically for energy-efficient, thermally robust Doherty amplifier designs in 4G/5G cellular base stations operating below 3 GHz.
FAQ
What is the maximum operating voltage for the A2I25D025NR1?
The A2I25D025NR1 has a maximum operating voltage (VDD) rating of +32 Vdc, with absolute maximum drain-source voltage (VDSS) of +65 Vdc. Operation at 28 Vdc is specified in all characterization and functional test data, and exceeding 32 Vdc risks permanent device damage per Table 1 Maximum Ratings in the official datasheet.
Does the A2I25D025NR1 require external input matching components?
No, the A2I25D025NR1 features on-chip 50 Ω input matching with DC blocking, eliminating the need for external input matching networks across its full 2100–2900 MHz operating range. This is explicitly stated in the Features section and validated by measurement data showing consistent 32.0–32.5 dB gain from 2300–2690 MHz without external tuning.
How is thermal management implemented in the A2I25D025NR1 package?
The A2I25D025NR1 uses a TO-270WB-17 package with an exposed backside source terminal that serves as the primary thermal path. This metal surface must be soldered directly to a heatsink, achieving a measured thermal resistance of 1.8 °C/W for Stage 2 under 3.2 W avg. output at 74 °C case temperature - a requirement confirmed in Table 2 Thermal Characteristics.
What is the purpose of the VBWA and VBWB pins on the A2I25D025NR1?
The VBWA and VBWB pins provide bias voltage inputs to the integrated quiescent current temperature compensation circuitry for Paths A and B respectively. As documented in Figure 1 and AN1977/AN1987, these pins enable stable IDQ1 and IDQ2 over temperature without external thermal sensors or control loops - a key enabler for DPD system stability in varying environmental conditions.
Can the A2I25D025NR1 be used in non-Doherty amplifier topologies?
Yes, the A2I25D025NR1 can be configured for parallel or cascaded single-path operation, but its dual-path architecture, independent gate bias terminals (VGS1A/VGS1B/VGS2A/VGS2B), and optimized load-pull contours are specifically tuned for Doherty applications. Using it outside Doherty configurations sacrifices the 20% PAE advantage and may require significant redesign of bias and matching networks.
A2I25D025NR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-270-17 Variant, Flat Leads
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 2.1GHz ~ 2.9GHz
- Gain:
- 31.9dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 157 mA
- Power - Output:
- 3.2W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- TO-270WB-17
A2I25D025NR1 FAQ
1.How can I place an order for A2I25D025NR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2I25D025NR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2I25D025NR1 reliable?
The price and inventory of A2I25D025NR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2I25D025NR1 is usually 5 days.
3.What payment methods are accepted for A2I25D025NR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A2I25D025NR1 transactions.
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4.How is shipping managed for A2I25D025NR1?
A2I25D025NR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2I25D025NR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2I25D025NR1?
For technical support, including A2I25D025NR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2I25D025NR1 requirements.
6.How does Aetrix verify that A2I25D025NR1 is sourced from the original manufacturer or authorized distributors?
All A2I25D025NR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2I25D025NR1 meets industry standards.
7.What is the process for return or replacement of A2I25D025NR1?
All A2I25D025NR1 units undergo pre-shipment inspection (PSI). If there is an issue with A2I25D025NR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2I25D025NR1 part is unused and in its original packaging.
Return procedure for A2I25D025NR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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