NXP Semiconductors A2T07D160W04SR3128

Overview

A2T07D160W04SR3 from NXP Semiconductors (formerly Freescale) is a symmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating across 716–960 MHz. It delivers 30 W average output power at 28 Vdc, achieves 48.5% drain efficiency and 22.1 dB power gain at 780 MHz under W-CDMA single-carrier conditions, and supports digital predistortion for linearization in macrocell and remote radio head applications.

For engineers reviewing the A2T07D160W04SR3 datasheet, A2T07D160W04SR3 pinout, A2T07D160W04SR3 application, or A2T07D160W04SR3 equivalent, key selection criteria include broadband Doherty operation up to 960 MHz, dual-gate biasing for carrier/peaking path control, ruggedness under 10:1 VSWR load mismatch, and thermal resistance of 0.63 °C/W for high-reliability RF power stages.

Technical Context

This device implements a monolithic dual-path LDMOS structure with separate carrier and peaking transistors in a single NI-780S-4L package. Its internal input/output matching enables 50 Ω system integration without external matching networks across both 758–803 MHz and 865–895 MHz bands.

The symmetrical Doherty architecture uses independent gate biasing: V_GSB = 1.2–1.3 Vdc for peaking path activation and V_GSA ≈ 2.2 Vdc quiescent for carrier path, enabling high-efficiency back-off operation while maintaining linearity under 9.9 dB PAR W-CDMA signals.

Key Specifications

Pinout & Package

Package: NI-780S-4L, thermally enhanced ceramic/metal flange-mount package with 4 leads and integral heat slug. Designed for low-inductance RF grounding and high-power dissipation in base station PA modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6VP2300HR5 and AFM905S, the A2T07D160W04SR3 uniquely delivers symmetrical Doherty operation across 716–960 MHz with proven W-CDMA linearity and ruggedness-making it the optimal choice for LTE-Advanced macro base station upgrades where spectral efficiency and energy savings are prioritized over raw peak power.

Availability

A2T07D160W04SR3 is available at Aetrix Electronics and suitable for macrocell base station transceivers, remote radio heads, multi-band infrastructure repeaters, and private LTE networks requiring stable component supply and long-term lifecycle support.

Supply support for A2T07D160W04SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, formed from the acquisition of Freescale Semiconductor in 2015. The company specializes in automotive, industrial, and communications semiconductor technologies.

The A2T07D160W04SR3 belongs to NXP's AIRFAST® RF Power LDMOS family, engineered specifically for energy-efficient, broadband cellular infrastructure amplifiers operating in sub-1 GHz frequency bands with stringent linearity and reliability requirements.

FAQ

What is the maximum continuous drain voltage rating for the A2T07D160W04SR3?

The A2T07D160W04SR3 has a maximum drain-source voltage (V_DSS) rating of +70 Vdc and –0.5 Vdc. This allows safe operation under transient voltage spikes up to 70 V in 28 Vdc-powered base station PA stages, including turn-on overshoot and load-dump events. The negative limit prevents gate-source reverse breakdown during fast switching transitions.

Does the A2T07D160W04SR3 require external input/output matching networks?

No, the A2T07D160W04SR3 features internal input and output matching optimized for 50 Ω systems across its entire 716–960 MHz operating band. This eliminates discrete matching components in most applications, simplifying layout and improving repeatability. External tuning may be applied for narrowband optimization, but is not required for broadband operation.

What is the recommended gate bias configuration for Doherty operation of the A2T07D160W04SR3?

For standard Doherty operation, bias the carrier path (Pin 3) at V_GS(Q) = 2.2 Vdc (typical) and the peaking path (Pin 4) at V_GSB = 1.2–1.3 Vdc. This ensures carrier transistor operates in Class AB while peaking transistor activates only above 6 dB power back-off-achieving peak efficiency at 48.5% and maintaining ACPR < –31 dBc under W-CDMA signals.

How does the A2T07D160W04SR3 perform under high VSWR conditions?

The A2T07D160W04SR3 is characterized to withstand 10:1 VSWR at 32 Vdc and 132 W pulse output power without degradation. Test data confirms no device parameter shift after exposure to this extreme mismatch condition-validating its suitability for outdoor base station deployments where antenna faults or environmental detuning may occur.

Is the A2T07D160W04SR3 compatible with digital predistortion (DPD) systems?

Yes, the A2T07D160W04SR3 is explicitly designed for DPD-enabled transmitters. Its AM/PM distortion is limited to ≤ –18° at P3dB compression across 758–803 MHz, enabling stable closed-loop DPD convergence. Freescale/NXP provides s-parameter models and load-pull contours to facilitate accurate behavioral model extraction for DPD algorithm development.