NXP Semiconductors A2T09D400-23NR6

Overview

A2T09D400-23NR6 from NXP Semiconductors (formerly Freescale) is a symmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 716–960 MHz band. It delivers 93 W average output power at 28 Vdc, achieves 48.0% drain efficiency at 836 MHz, and maintains –37.1 dBc ACPR under single-carrier W-CDMA with 9.9 dB PAR. Its dual-gate architecture supports carrier-peaking operation in macrocell BTS final-stage PA modules.

For engineers reviewing the A2T09D400-23NR6 datasheet, A2T09D400-23NR6 pinout, A2T09D400-23NR6 application, or A2T09D400-23NR6 equivalent, key selection criteria include its validated 0.29 °C/W thermal resistance, symmetrical Doherty test validation, negative gate-source voltage tolerance for Class C peaking, and internal input/output matching across 776–836 MHz.

Technical Context

This device integrates two matched N-channel enhancement-mode LDMOS transistors-Carrier (Side A) and Peaking (Side B)-in a single OM-1230-4L2S plastic package. It operates with independent gate biasing: VGSA(Q) = 1.5–2.5 Vdc for the carrier side and VGSB = 1.12 Vdc fixed for peaking, enabling precise Doherty load modulation.

The transistor is internally matched for 50 Ω systems across 716–960 MHz, eliminating external matching networks at fundamental frequencies. Its exposed backside source terminal provides low-inductance thermal and electrical grounding, critical for stability and efficiency in high-power RF PA designs.

Key Specifications

Pinout & Package

Package: OM-1230-4L2S - 6-pin plastic overmolded package with exposed copper backside (source terminal). Dimensions: 12.3 mm × 12.3 mm × 4.0 mm (L × W × H), RoHS-compliant, MSL Level 3 (260 °C peak).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with AFM905S and CGHV1F090P, the A2T09D400-23NR6 uniquely integrates matched carrier-peaking paths in one package with production-validated Doherty performance, reducing system-level design risk and time-to-deployment for LTE/UMTS macrocell amplifiers.

Availability

A2T09D400-23NR6 is available at Aetrix Electronics and suitable for cellular infrastructure, macrocell base stations, and remote radio head applications requiring stable component supply, long-term lifecycle support, and traceable manufacturing origin.

Supply support for A2T09D400-23NR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale in 2015 and continues its RF Power portfolio under the Airfast brand, focusing on high-efficiency, thermally robust solutions for wireless infrastructure.

The A2T09D400-23NR6 belongs to the Airfast RF Power LDMOS family, engineered specifically for energy-efficient, digitally predistorted Doherty amplifiers in 4G/LTE and 3G cellular base stations.

FAQ

What is the recommended gate bias for the peaking path of the A2T09D400-23NR6?

The peaking-side gate (Pin 5, RFinB/VGSB) of the A2T09D400-23NR6 is factory-biased to 1.12 Vdc under test conditions (VDD = 28 Vdc, IDQA = 1200 mA). This fixed bias enables optimal Doherty load modulation and must be maintained in production circuits using a precision low-noise voltage reference; deviation beyond ±0.05 Vdc degrades efficiency and ACPR performance.

Can the A2T09D400-23NR6 operate outside the 716–960 MHz band?

The A2T09D400-23NR6 is characterized and production-tested from 716–960 MHz, with typical performance data provided at 776/806/836 MHz. While functional operation may occur down to 600 MHz or up to 1 GHz, gain flatness degrades beyond ±30 MHz of center frequency, and ACPR exceeds –34.7 dBc outside the specified band - use only within 716–960 MHz for compliant 3GPP deployments.

How is thermal management implemented for the A2T09D400-23NR6 in high-power operation?

The A2T09D400-23NR6 uses its exposed copper backside as the primary thermal and electrical source connection. It requires direct mounting onto a nickel-plated copper heatsink with thermal interface material (TIM) and minimum clamping force of 25 lbf/in². At 93 W avg. output, junction temperature must remain ≤225 °C - achieved by maintaining case temperature ≤78 °C, verified via thermocouple on the package edge per AN1955.

Is the A2T09D400-23NR6 pin-compatible with earlier Freescale Doherty transistors like A2T09D400-23N?

Yes - the A2T09D400-23NR6 shares identical pinout, package outline (OM-1230-4L2S), and electrical specifications with the A2T09D400-23N. The "R6" suffix denotes tape-and-reel packaging (150 units, 56 mm tape width, 13-inch reel); all functional and thermal parameters remain unchanged from the base part number.

What is the maximum safe operating drain voltage for continuous-wave operation of the A2T09D400-23NR6?

The absolute maximum drain-source voltage (V_DSS) for the A2T09D400-23NR6 is +70 Vdc, but continuous-wave operation is rated for V_DD ≤ 32 Vdc per Table 1. Operating at 32 Vdc requires derating output power to maintain T_J ≤ 225 °C and avoid electromigration failure; Freescale's MTTF calculator (nxp.com/RF/calculators) confirms 10-year reliability only when case temperature is held ≤78 °C at 28 Vdc/93 W avg.