NXP Semiconductors A2T14H450-23NR6

Overview

A2T14H450-23NR6 from NXP Semiconductors is a 93 W asymmetrical Doherty RF power LDMOS transistor, configured as an N-channel enhancement-mode lateral MOSFET for cellular base station amplifiers operating at 1427–1517 MHz. It delivers 19.0 dB power gain, 48.7% drain efficiency, and –38.6 dBc ACPR at 1511 MHz under W-CDMA conditions (31 Vdc, 93 W avg., PAR = 9.9 dB), enabling high-efficiency macrocell and massive MIMO PA stages.

For engineers reviewing the A2T14H450-23NR6 datasheet, A2T14H450-23NR6 pinout, A2T14H450-23NR6 application, or A2T14H450-23NR6 equivalent, this device requires attention to its dual-gate Doherty architecture, exposed-source thermal interface, gate voltage tolerance (–6.0 to +10 Vdc), and 6-pin OM-1230-4L2S package layout-critical for impedance-matched PCB design, thermal management, and digital predistortion integration.

Technical Context

This device implements an integrated asymmetrical Doherty topology with separate carrier and peaking transistors in a monolithic plastic package. Its gate structure supports Class AB carrier operation (VGSA(Q) = 2.5 Vdc typical) and deep Class C peaking bias (VGSB = 0.5 Vdc), enabling high efficiency across 59 MHz bandwidth while maintaining linearity under W-CDMA signal compression.

The OM-1230-4L2S package features an exposed backside source terminal and optimized internal matching for 50 Ω systems. Thermal resistance is specified at 0.27 °C/W (junction-to-case), validated at 93 W avg. output under W-CDMA excitation at 1482 MHz, supporting high-power continuous-wave and pulsed operation up to TC = +150 °C.

Key Specifications

Pinout & Package

Package: OM-1230-4L2S, thermally enhanced plastic overmolded package with exposed copper backside (source terminal). Dimensions per NXP specification: 10.16 mm × 10.16 mm × 4.57 mm (L × W × H), RoHS-compliant, MSL Level 3 (260 °C peak).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with A2T14H450-23N and MRF6VP2450HR6, the A2T14H450-23NR6 offers plug-compatible monolithic Doherty operation at 93 W avg., eliminating external combiner losses and bias coordination circuitry-reducing bill-of-materials cost and layout area by ~35% versus discrete GaN alternatives.

Availability

A2T14H450-23NR6 is available at Aetrix Electronics and suitable for macrocell base stations, massive MIMO active antenna units, and 5G NR uplink boosters requiring stable component supply, consistent thermal performance, and long-term production continuity.

Supply support for A2T14H450-23NR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with core expertise in RF power, radar, and secure edge processing.

The A2T14H450-23NR6 belongs to NXP's AIRFAST® RF Power LDMOS family, engineered specifically for energy-efficient, digitally predistorted cellular infrastructure amplifiers operating in licensed sub-6 GHz bands.

FAQ

What is the maximum continuous drain voltage rating for the A2T14H450-23NR6?

The A2T14H450-23NR6 has a maximum drain-source voltage rating (VDSS) of +65 Vdc and –0.5 Vdc. This rating supports safe operation under transient voltage spikes common in base station power supplies, provided VDD remains within the specified operating range of 0 to +32 Vdc. The device must never be subjected to reverse drain-source voltage exceeding –0.5 Vdc.

How does the A2T14H450-23NR6 support digital predistortion (DPD) systems?

The A2T14H450-23NR6 supports DPD through its well-characterized AM/PM response (–10° max across 1452–1511 MHz) and low gain variation (0.023 dB/°C), enabling stable model convergence. Its internally matched 50 Ω ports reduce signal path variability, and the –38.6 dBc ACPR at 1511 MHz provides sufficient headroom for DPD correction without excessive clipping.

Can the A2T14H450-23NR6 operate in symmetrical Doherty mode?

No-the A2T14H450-23NR6 is designed exclusively for asymmetrical Doherty operation, with distinct carrier and peaking transistor characteristics (e.g., VGSA(Q) = 2.5 Vdc vs. VGSB = 0.5 Vdc). Its load-pull data, thermal design, and internal matching are optimized for the 93 W avg. asymmetrical configuration; symmetrical use would degrade efficiency and linearity.

What is the thermal resistance junction-to-case for the A2T14H450-23NR6, and how is it measured?

The thermal resistance junction-to-case (RθJC) for the A2T14H450-23NR6 is 0.27 °C/W, measured under defined W-CDMA conditions: 93 W avg. output, 31 Vdc, IDQA = 1000 mA, VGSB = 0.5 Vdc, at 1482 MHz, with case temperature held at 74 °C. This value assumes direct thermal interface between the exposed source pad and heatsink using recommended solder reflow per AN1907.

Is the A2T14H450-23NR6 pin-compatible with earlier revisions like A2T14H450-23N?

Yes-the A2T14H450-23NR6 is functionally and mechanically identical to A2T14H450-23N, differing only in packaging format (R6 suffix denotes 150-unit tape-and-reel). Pinout, electrical specifications, thermal characteristics, and footprint are fully identical; no PCB or schematic changes are required when substituting A2T14H450-23NR6 for A2T14H450-23N.