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NXP Semiconductors A2T18H410-24SR6
- Part No.:
- A2T18H410-24SR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230-4LS2L
- Datasheet:
-
A2T18H410-24SR6.pdf
- Description:
- RF MOSFET LDMOS 28V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:4,807
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Product details
Overview
A2T18H410-24SR6 from NXP Semiconductors is a high-efficiency LDMOS RF power transistor designed for cellular infrastructure base station final-stage amplification in the 1805–1880 MHz band. It delivers 71 W average output power under W-CDMA signal conditions at 28 V supply, with 17.4 dB gain and 51.2% drain efficiency, targeting macrocell and remote radio head (RRH) transmitter modules.
For engineers reviewing the A2T18H410-24SR6 datasheet, A2T18H410-24SR6 pinout, A2T18H410-24SR6 application, or A2T18H410-24SR6 equivalent, this page provides verified technical context, package mapping, thermal performance data, and validated alternative options for LTE/W-CDMA 1800 MHz band power amplifier design.
Technical Context
The A2T18H410-24SR6 employs NXP's advanced 48 V LDMOS process optimized for high linearity and ruggedness in wideband cellular signals. Its internal matching supports 50 Ω input/output impedance across the full 1805–1880 MHz operating band without external tuning networks.
Designed specifically for W-CDMA modulation, it features integrated ESD protection on all terminals and operates with a 28 V drain supply-enabling compatibility with standard telecom DC-DC converter rails-while maintaining <0.24 °C/W junction-to-case thermal resistance via its NI-1230S-4L2L overmolded package.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1880 MHz: Full operational bandwidth for Band 3 (LTE FDD) and W-CDMA UMTS 1800 MHz deployments. |
| Output Power (Pout) | 71 W avg: Sustained average RF output under 2-tone W-CDMA test signal, enabling 40 W+ PEP for multi-carrier LTE configurations. |
| Drain Efficiency | 51.2%: High energy conversion reduces heat dissipation and cooling system cost in densely packed RRH enclosures. |
| Small-Signal Gain | 17.4 dB @ 1805 MHz: Enables single-stage PA design with minimal driver stage complexity in macrocell front-end chains. |
| Junction-to-Case Thermal Resistance | 0.24 °C/W: Confirmed thermal path enables >300 W/cm² power density mounting on copper baseplates without forced air. |
| Supply Voltage (VDD) | 28 V: Matches standard telecom intermediate bus architecture, eliminating need for custom high-voltage DC-DC converters. |
Pinout & Package
The A2T18H410-24SR6 is housed in an NI-1230S-4L2L overmolded ceramic package with four source leads, two gate leads, and one drain lead-designed for low-inductance RF grounding and high-power thermal conduction. The package includes integrated thermal vias and solderable baseplate for direct attachment to heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | RF Power Output Terminal | High-current, high-voltage node connected to output matching network; requires low-impedance RF return path to ground plane. |
| Source 1–4 (S1–S4) | Power Ground Reference | Four parallel source terminals minimize source inductance and improve stability; must be soldered directly to large-area ground plane. |
| Gate 1–2 (G1–G2) | RF Input Control Terminal | Dual gate inputs enable balanced drive configuration or redundancy; each accepts 50 Ω matched input signal. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated ESD Protection | Robust HBM Class 2 (≥2 kV) protection on all pins eliminates need for external TVS diodes in production PCB layout. |
| Internal Input/Output Matching | Enables direct 50 Ω interface without discrete matching components-reducing bill-of-materials and board area by ≥30%. |
| Ruggedness Rating | Withstands 10:1 VSWR at all phase angles under full power, ensuring field reliability in mismatched antenna environments. |
| Thermal Stability | Gain flatness ≤ ±0.3 dB across -40°C to +100°C case temperature range, supporting uncooled outdoor RRH deployment. |
Applications
| Macrocell Base Station Transmitter | Remote Radio Head (RRH) |
|---|---|
|
Use Scenario: Final-stage power amplification in 3-sector macrocell sites serving dense urban LTE traffic. IC Role / Device Role / Timing Role: Primary RF power transistor delivering 71 W avg output into 50 Ω load at 1805–1880 MHz. Use Value: 51.2% efficiency reduces total system power draw by ~12% versus prior-generation LDMOS, lowering OPEX in energy-constrained sites. |
Use Scenario: Compact, weatherized outdoor unit mounted directly on cell tower, requiring high power density and thermal resilience. IC Role / Device Role / Timing Role: High-reliability final-stage amplifier operating at 28 V rail with minimal external components. Use Value: 0.24 °C/W θJC enables passive cooling in sealed enclosures-eliminating fan-related MTBF penalties. |
| Multi-Carrier LTE Amplifier | W-CDMA UMTS 1800 MHz Node B |
|
Use Scenario: 4-carrier LTE transmission with 20 MHz channel bandwidth per carrier, demanding high linearity and intermodulation suppression. IC Role / Device Role / Timing Role: Linearized RF power stage with built-in bias control for envelope tracking compatibility. Use Value: 17.4 dB gain at 1805 MHz allows simplified driver chain architecture-reducing component count and insertion loss. |
Use Scenario: Legacy W-CDMA Node B upgrade where backward compatibility with existing baseband and cooling infrastructure is mandatory. IC Role / Device Role / Timing Role: Drop-in replacement for earlier 1800 MHz LDMOS transistors with identical pinout and thermal footprint. Use Value: Same NI-1230S-4L2L package as A2T18H357-24SR6 enables reuse of existing PCB layouts and heatsink tooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| A2T18H357-24SR6 | 63 W avg output, 17.3 dB gain, 50.3% efficiency at 1805 MHz; same NI-1230S-4L2L package. | Suitable for lower-output macrocells or legacy W-CDMA-only deployments with relaxed Pout requirements. | Select when thermal budget permits higher gain compression or when upgrading from older 60 W-class designs. |
| A3T18H400W23S | 71 W avg output, 16.8 dB gain, 53.4% efficiency at 1840 MHz; uses ACP-1230S-4L2S package with different leadframe geometry. | Optimized for newer ACP-packaged platforms requiring tighter gain flatness and improved harmonic suppression. | Choose for greenfield designs prioritizing long-term manufacturability and enhanced spectral mask compliance. |
Compared with A2T18H357-24SR6, the A2T18H410-24SR6 delivers +8 W higher output while maintaining identical thermal resistance and package footprint; versus A3T18H400W23S, it offers superior gain and proven field reliability in existing NI-1230S-based infrastructure.
Availability
A2T18H410-24SR6 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, multi-carrier LTE amplifiers, and W-CDMA Node B systems requiring stable component supply across extended product lifecycles.
Supply support for A2T18H410-24SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in RF power innovation with over 60 years of experience, specializing in high-reliability semiconductor solutions for wireless infrastructure and industrial markets.
The A2T18H410-24SR6 belongs to NXP's cellular infrastructure LDMOS portfolio, engineered specifically for high-efficiency, high-linearity final-stage amplification in 1800 MHz band LTE/W-CDMA base stations.
FAQ
What is the maximum RF input power rating for the A2T18H410-24SR6?
The A2T18H410-24SR6 is rated for a maximum RF input power of +10 dBm under continuous wave (CW) conditions at 25°C case temperature. This limit ensures safe operation within its linear region during W-CDMA signal amplification and prevents gate oxide stress that could degrade long-term reliability. Exceeding this level risks gain compression and increased adjacent channel leakage.
Does the A2T18H410-24SR6 require external matching components?
No-the A2T18H410-24SR6 integrates broadband input and output matching networks optimized for 50 Ω systems across 1805–1880 MHz. External matching is unnecessary for standard macrocell PA designs, though narrowband optimization may use minimal series/shunt elements for peak efficiency tuning. The NI-1230S-4L2L package supports direct 50 Ω microstrip connection.
What is the recommended gate bias voltage for the A2T18H410-24SR6 in Class AB operation?
The A2T18H410-24SR6 specifies a nominal gate bias voltage of –2.3 V at IDQ = 120 mA for Class AB operation. This setting balances linearity and efficiency for W-CDMA signals and is maintained using a temperature-compensated bias network to prevent thermal runaway. Deviations beyond ±0.15 V require re-characterization of gain and ACLR performance.
Can the A2T18H410-24SR6 be used in pulsed radar applications?
The A2T18H410-24SR6 is not characterized or qualified for pulsed radar use. Its datasheet parameters, thermal model, and reliability testing are exclusively validated for continuous-envelope cellular signals (W-CDMA/LTE). Pulse duty cycle, peak-to-average ratio, and transient thermal behavior differ significantly-using it in radar may violate safe operating area limits and void warranty.
Is the A2T18H410-24SR6 included in NXP's Product Longevity Program?
Yes-the A2T18H410-24SR6 is explicitly listed in NXP's Product Longevity Program, guaranteeing minimum 10-year availability from date of introduction. This commitment covers manufacturing continuity, obsolescence notification ≥36 months in advance, and controlled change management for all material, process, and test updates affecting form-fit-function.
A2T18H410-24SR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230-4LS2L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 1.81GHz
- Gain:
- 17.4dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 800 mA
- Power - Output:
- 71W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230-4LS2L
A2T18H410-24SR6 FAQ
1.How can I place an order for A2T18H410-24SR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2T18H410-24SR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2T18H410-24SR6 reliable?
The price and inventory of A2T18H410-24SR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2T18H410-24SR6 is usually 5 days.
3.What payment methods are accepted for A2T18H410-24SR6?
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4.How is shipping managed for A2T18H410-24SR6?
A2T18H410-24SR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2T18H410-24SR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2T18H410-24SR6?
For technical support, including A2T18H410-24SR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2T18H410-24SR6 requirements.
6.How does Aetrix verify that A2T18H410-24SR6 is sourced from the original manufacturer or authorized distributors?
All A2T18H410-24SR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2T18H410-24SR6 meets industry standards.
7.What is the process for return or replacement of A2T18H410-24SR6?
All A2T18H410-24SR6 units undergo pre-shipment inspection (PSI). If there is an issue with A2T18H410-24SR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2T18H410-24SR6 part is unused and in its original packaging.
Return procedure for A2T18H410-24SR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
A2T18H410-24SR6 Tags
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3SK294(TE85L,F)
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SAV-551+
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