NXP Semiconductors A2T18H455W23NR6

Overview

A2T18H455W23NR6 from NXP Semiconductors (formerly Freescale) is an asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 1805–1880 MHz band. It delivers 87 W average output power at 31.5 Vdc with 48.4% drain efficiency and 15.9 dB power gain at 1880 MHz under W-CDMA single-carrier conditions, supporting digital predistortion in macrocell infrastructure.

For engineers reviewing the A2T18H455W23NR6 datasheet, A2T18H455W23NR6 pinout, A2T18H455W23NR6 application, or A2T18H455W23NR6 equivalent, key selection criteria include its dual-gate Doherty architecture, 0.23 °C/W junction-to-case thermal resistance, 1805–1880 MHz instantaneous bandwidth, and ability to withstand 10:1 VSWR without degradation.

Technical Context

This device integrates two laterally diffused MOSFETs - a carrier transistor (Side A) and a peaking transistor (Side B) - in a single OM-1230-4L2S plastic overmolded package. Its internal input/output matching enables operation across the full 1805–1880 MHz band without external tuning networks.

The carrier side operates at IDQA = 1080 mA with VGSA(Q) = 2.5 Vdc, while the peaking side is biased at VGSB = 0.25 Vdc. Both sides share a common source (exposed backside) and require tied VDDA/VDDB rails per Freescale test fixture requirements.

Key Specifications

Pinout & Package

Package: OM-1230-4L2S - overmolded plastic, exposed source paddle, 6-pin surface-mount configuration. Thermal path optimized via direct die attach to copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6V2150N and AFM905S, A2T18H455W23NR6 provides integrated asymmetrical Doherty functionality, eliminating external combiner losses and simplifying layout - delivering 48.4% efficiency at 87 W within a proven LDMOS process with mature reliability data.

Availability

A2T18H455W23NR6 is available at Aetrix Electronics and suitable for macrocell base station PA, remote radio head (RRH), W-CDMA Node B, and 5G sub-6 GHz pre-massive MIMO applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for A2T18H455W23NR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies inherited from Freescale.

A2T18H455W23NR6 belongs to the Airfast RF Power LDMOS family, engineered specifically for energy-efficient, broadband cellular infrastructure amplifiers operating in licensed spectrum bands from 700 MHz to 3.8 GHz.

FAQ

What is the maximum continuous drain current rating for A2T18H455W23NR6?

The A2T18H455W23NR6 does not specify a maximum continuous drain current in absolute terms. Instead, it defines operational limits by quiescent current: IDQA = 1080 mA for the carrier side under typical W-CDMA test conditions (VDD = 31.5 Vdc). The device's safe operating area is governed by VDSS (–0.5 to +65 Vdc), TJ (–40 to +225 °C), and thermal resistance (0.23 °C/W), not a fixed IDC rating. Always refer to the SOA curves in the official datasheet for pulsed and CW boundary conditions.

Can A2T18H455W23NR6 be used in a symmetrical Doherty configuration?

No - A2T18H455W23NR6 is explicitly designed and characterized for asymmetrical Doherty operation, with distinct carrier (Side A) and peaking (Side B) transistor parameters. Its internal layout, biasing requirements (e.g., VGSB = 0.25 Vdc), and load-pull data assume asymmetry. Using it in a symmetrical configuration would violate the specified operating conditions and invalidate published performance metrics like 48.4% efficiency and –33.8 dBc ACPR.

What is the recommended PCB material and thickness for A2T18H455W23NR6 evaluation?

The reference design in Table 7 specifies Rogers RO4350B laminate with 0.020″ thickness (0.508 mm) and εr = 3.66. This material provides optimal RF performance, thermal stability, and controlled impedance for the 1805–1880 MHz band. Use of alternative substrates (e.g., FR-4) will degrade gain flatness, ACPR, and thermal dissipation - especially above 50 W average output - and is not validated for A2T18H455W23NR6.

Does A2T18H455W23NR6 require external input/output matching networks?

No - A2T18H455W23NR6 is internally matched on both input and output for 50 Ω systems across 1805–1880 MHz, as confirmed in Table 6 footnote 2 and Figure 1 layout. External matching is unnecessary for baseline operation; however, fine-tuning networks may be added for specific linearity or efficiency targets, as demonstrated in the load-pull data (Tables 8–11).

What is the ESD sensitivity classification for A2T18H455W23NR6?

A2T18H455W23NR6 is rated Class 2 per JESD22-A114 (Human Body Model), Class B per JESD22-A115 (Machine Model), and Class IV per JESD22-C101 (Charge Device Model). These ratings indicate moderate robustness - sufficient for standard handling with grounded wrist straps and ESD-safe workstations, but insufficient for direct unshielded board-level probing without current-limiting series resistors.