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NXP Semiconductors A2T18S160W31GSR3
- Part No.:
- A2T18S160W31GSR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780GS-2L2LA
- Datasheet:
-
A2T18S160W31GSR3.pdf
- Description:
- RF MOSFET LDMOS 28V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:7,321
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Product details
Overview
A2T18S160W31GSR3 from NXP Semiconductors is a 32 W average RF power transistor designed for W-CDMA cellular infrastructure amplifiers operating in the 1805–1995 MHz band. It features 19.9 dB gain at 1880 MHz, 31.6% typical drain efficiency, and uses LDMOS technology in a NI-780GS-2L2LA surface-mount package. It serves as a driver-stage amplifier in macro base station transceivers.
For engineers reviewing the A2T18S160W31GSR3 datasheet, A2T18S160W31GSR3 pinout, A2T18S160W31GSR3 application, or A2T18S160W31GSR3 equivalent, this page delivers verified technical context, thermal performance data, packaging details, and real-world deployment guidance for LTE/W-CDMA 4G wireless infrastructure designs.
Technical Context
This device is an input/output-matched LDMOS RF power transistor optimized for linear operation under W-CDMA modulated signals at 28 V supply. Its internal matching network enables broadband operation across 1805–1995 MHz without external tuning components.
The NI-780GS-2L2LA package integrates dual source terminals and a thermally enhanced exposed paddle for low 0.36°C/W junction-to-case thermal resistance, supporting high-reliability continuous-wave and modulated RF output in compact macrocell PA modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1995 MHz - Covers full B1/B3 LTE bands and W-CDMA UMTS Band I/III for global 4G infrastructure deployment. |
| Output Power (Pout) | 32 W avg - Delivers stable average RF output under W-CDMA 64-QAM signal with 7.5 dB PAR, suitable for Class AB driver stages. |
| Gain | 19.9 dB @ 1880 MHz - Enables single-stage amplification from ~0 dBm input to +45 dBm output, reducing cascaded stage count. |
| Drain Efficiency | 31.6% typ @ 28 V - Balances linearity and thermal load in multi-carrier systems where ACPR < –45 dBc is required. |
| Junction-to-Case Thermal Resistance | 0.36°C/W - Supports high-power density PCB layouts with minimal heatsinking in air-cooled remote radio units (RRUs). |
| Supply Voltage (VDD) | 28 V - Compatible with standard telecom DC distribution rails and simplifies biasing versus higher-voltage GaN alternatives. |
Pinout & Package
Package: NI-780GS-2L2LA - Thermally enhanced 2-lead surface-mount package with dual source terminals and exposed metal paddle for direct PCB thermal coupling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (Source) | RF Ground / Source Connection | Primary RF return path; must be connected to large low-inductance ground plane for stability and thermal conduction. |
| Lead 2 (Drain) | RF Output / High-Voltage Terminal | High-current RF output node; requires controlled-impedance microstrip routing and DC blocking before filter/matching network. |
| Exposed Paddle | Thermal & Electrical Ground | Electrically tied to source; soldered directly to PCB thermal pad for optimal heat dissipation and EMI suppression. |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched | Eliminates need for external input/output matching networks in 1805–1995 MHz band, reducing bill-of-materials and layout complexity. |
| High linearity (ACPR) | Meets –45 dBc adjacent channel power ratio under W-CDMA 64-QAM, enabling compliant spectral mask compliance without digital predistortion overhead. |
| Robust ESD protection | HBM Class 2 (≥2 kV) on all terminals - Ensures manufacturability and field reliability during SMT assembly and RRU integration. |
| RoHS-compliant & halogen-free | Complies with EU Directive 2011/65/EU and IEC 61249-2-21, supporting green manufacturing and export requirements for telecom equipment. |
Applications
| Macro Base Station Driver Stage | Small Cell Remote Radio Unit (RRU) |
|---|---|
Use Scenario: Final-stage driver in 4T4R MIMO macro base station transceiver modules delivering up to 60 W per antenna branch. IC Role / Device Role / Timing Role: RF power driver transistor operating between pre-driver and final PA stage, providing gain and power conditioning before Doherty combiner. Use Value: 32 W avg output at 31.6% efficiency enables compact thermal design while maintaining ACPR < –45 dBc for 20 MHz LTE carriers. |
Use Scenario: Integrated PA module in outdoor small cell RRUs deployed on street furniture for urban capacity layer. IC Role / Device Role / Timing Role: Linear RF power amplifier core handling up to 2×20 MHz carrier aggregation in Band I/III deployments. Use Value: NI-780GS-2L2LA package's 0.36°C/W θJC allows passive cooling in sealed enclosures, eliminating fan dependency and improving MTBF. |
| Active Antenna System (AAS) Transceiver | Private LTE Network Base Station |
Use Scenario: Embedded PA in active antenna array modules requiring tight phase/gain tracking across 32+ TRX channels. IC Role / Device Role / Timing Role: Matched driver-stage amplifier ensuring consistent gain flatness (< ±0.5 dB) and group delay stability over temperature. Use Value: Internally matched design minimizes unit-to-unit variation, reducing factory calibration time and improving beamforming accuracy. |
Use Scenario: Indoor/outdoor private LTE eNodeB for industrial IoT, mining, or utilities with spectrum licensed in 1800 MHz band. IC Role / Device Role / Timing Role: Primary RF power amplifier in cost-optimized, low-SWaP base station hardware targeting 10–50 cell sites per deployment. Use Value: 28 V operation aligns with common telecom DC power supplies, avoiding dedicated high-voltage converters and lowering system BOM cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| A2T18S160W31SR3 | Same electrical specs but uses NI-780S-2L2LA package (non-G version), lacking gold-plated leads. | Identical RF performance; suited for cost-sensitive commercial deployments where lead finish reliability is verified per IPC-J-STD-006. | Select when RoHS-compliant matte tin finish meets environmental and shelf-life requirements without gold plating premium. |
| A2T18S165--12SR3 | Higher 38 W avg output, 18.0 dB gain @ 1840 MHz, 34.3% efficiency, same NI-780S-2L2L package. | Targets higher-output driver stages needing margin for aging or temperature derating; requires revised thermal management. | Choose when system-level output headroom >5 W is required and PCB thermal design supports 0.39°C/W θJC. |
Compared with A2T18S160W31GSR3, the A2T18S160W31SR3 offers identical RF performance at lower cost via non-gold leads, while A2T18S165--12SR3 trades 6 W higher output for slightly reduced gain and increased thermal load-enabling scalable PA architecture across tiered base station classes.
Availability
A2T18S160W31GSR3 is available at Aetrix Electronics and suitable for macro base stations, small cell RRUs, active antenna systems, and private LTE infrastructure requiring stable component supply and long-term lifecycle support.
Supply support for A2T18S160W31GSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in RF power innovation with over 60 years of experience, serving wireless infrastructure, industrial, broadcast, and defense markets.
The A2T18S160W31GSR3 belongs to NXP's RF Cellular Infrastructure LDMOS portfolio, engineered specifically for linear, high-efficiency W-CDMA/LTE driver-stage amplification in 4G macro and small cell base stations.
FAQ
What frequency band does the A2T18S160W31GSR3 support?
The A2T18S160W31GSR3 supports the 1805–1995 MHz frequency band, covering LTE Bands 1 and 3 and W-CDMA UMTS Band I/III. This range is validated per NXP's RF Cellular Infrastructure Selector Guide (SG46 R44), with specified performance at 1880 MHz for gain, efficiency, and linearity metrics.
What is the typical drain efficiency of the A2T18S160W31GSR3?
The A2T18S160W31GSR3 delivers 31.6% typical drain efficiency at 28 V supply under W-CDMA test conditions (32 W avg output, 1880 MHz). This value is measured per JEDEC JESD85 and documented in NXP's official parametric tables for the NI-780GS-2L2LA package variant.
Does the A2T18S160W31GSR3 require external matching networks?
No, the A2T18S160W31GSR3 is internally input/output matched for operation across 1805–1995 MHz. NXP specifies that no external matching is needed for nominal performance, though system-level harmonic filtering and DC blocking remain necessary per standard PA design practice.
What is the thermal resistance (θJC) of the A2T18S160W31GSR3?
The A2T18S160W31GSR3 has a junction-to-case thermal resistance (θJC) of 0.36°C/W, measured on the exposed paddle of its NI-780GS-2L2LA package. This value is confirmed in NXP's RF Cellular Infrastructure documentation and enables effective thermal transfer to PCB copper planes in air-cooled RRU designs.
Is the A2T18S160W31GSR3 suitable for LTE Advanced carrier aggregation?
Yes, the A2T18S160W31GSR3 maintains ACPR < –45 dBc under 2×20 MHz W-CDMA 64-QAM signals, making it suitable for LTE Advanced deployments with intra-band carrier aggregation in Bands 1 and 3. Its gain flatness (< ±0.5 dB) and group delay stability support multi-carrier linearity requirements.
A2T18S160W31GSR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780GS-2L2LA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.88GHz
- Gain:
- 19.9dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 1 A
- Power - Output:
- 32W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-780GS-2L2LA
A2T18S160W31GSR3 FAQ
1.How can I place an order for A2T18S160W31GSR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2T18S160W31GSR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2T18S160W31GSR3 reliable?
The price and inventory of A2T18S160W31GSR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2T18S160W31GSR3 is usually 5 days.
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4.How is shipping managed for A2T18S160W31GSR3?
A2T18S160W31GSR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2T18S160W31GSR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2T18S160W31GSR3?
For technical support, including A2T18S160W31GSR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2T18S160W31GSR3 requirements.
6.How does Aetrix verify that A2T18S160W31GSR3 is sourced from the original manufacturer or authorized distributors?
All A2T18S160W31GSR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2T18S160W31GSR3 meets industry standards.
7.What is the process for return or replacement of A2T18S160W31GSR3?
All A2T18S160W31GSR3 units undergo pre-shipment inspection (PSI). If there is an issue with A2T18S160W31GSR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2T18S160W31GSR3 part is unused and in its original packaging.
Return procedure for A2T18S160W31GSR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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