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NXP Semiconductors A2T18S160W31SR3
- Part No.:
- A2T18S160W31SR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780S-2L2LA
- Datasheet:
-
A2T18S160W31SR3.pdf
- Description:
- RF MOSFET LDMOS 28V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:7,560
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Product details
Overview
A2T18S160W31SR3 from NXP Semiconductors is a 32 W average RF power transistor designed for W-CDMA cellular infrastructure amplifiers in the 1805–1995 MHz band, operating at 28 V supply with 19.9 dB gain at 1880 MHz and 31.6% drain efficiency.
For engineers reviewing the A2T18S160W31SR3 datasheet, A2T18S160W31SR3 pinout, A2T18S160W31SR3 application, or A2T18S160W31SR3 equivalent, this device serves as a high-efficiency, surface-mount GaN-based RF power amplifier stage for macro base station final output stages requiring stable thermal performance and broadband linearity in LTE/W-CDMA bands.
Technical Context
This LDMOS-based RF power transistor employs an input/output matched architecture optimized for W-CDMA signal envelope characteristics, featuring integrated thermal management via low 0.36 °C/W junction-to-case resistance and a fully matched 50 Ω input/output design eliminating external matching networks in typical 1805–1995 MHz deployments.
It operates under Class AB biasing with 28 V DC supply, delivering linearized POUT of 32 W avg. at ACPR-compliant levels for 3GPP-compliant base station transmitters, and supports standard 2-layer PCB layouts using its NI-780S-2L2LA package footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1995 MHz - Covers full LTE Band 3 (1800 MHz) and Band 1 (2100 MHz) uplink/downlink edges for multi-band macro cell deployment. |
| Output Power (Avg) | 32 W - Sustained average RF output under W-CDMA 64-QAM modulated signal, enabling 2×2 MIMO 20 MHz carrier support per PA stage. |
| Drain Efficiency | 31.6% - Enables thermally constrained outdoor cabinet designs with reduced heatsink mass and fan requirements vs. lower-efficiency alternatives. |
| Small-Signal Gain | 19.9 dB @ 1880 MHz - Provides sufficient gain margin to drive into saturation without intermediate driver stage compression in 2-stage PA architectures. |
| Junction-to-Case Thermal Resistance | 0.36 °C/W - Allows direct mounting to copper-clad heatsinks with minimal thermal interface material, supporting >100,000-hour MTTF at Tc ≤ 85 °C. |
| Supply Voltage | 28 V - Compatible with standard telecom DC distribution rails and enables higher output impedance matching than 12–15 V LDMOS devices. |
Pinout & Package
Package: NI-780S-2L2LA - Thermally enhanced plastic overmolded surface-mount package with dual source pads and exposed thermal slug for bottom-side heat dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source 1) | RF Ground / Thermal Path | Directly connected to internal die backside; must be soldered to large PCB copper pour for thermal conduction and RF return path integrity. |
| Pin 2 (Drain) | RF Output / High-Voltage Node | High-impedance RF output terminal; requires external low-pass filtering and harmonic termination before antenna coupling network. |
| Pin 3 (Gate) | RF Input / Bias Control | High-impedance gate node; requires DC blocking capacitor and gate bias network (typically 2.8–3.2 V) for stable Class AB operation. |
| Pin 4 (Source 2) | RF Ground / Thermal Path | Second thermal/ground connection; must be independently routed to ground plane to minimize source inductance and improve stability. |
Key Features
| Feature | Design Value |
|---|---|
| Input/Output Matched | 50 Ω matched across 1805–1995 MHz - Eliminates need for external broadband matching components, reducing BOM count and layout sensitivity. |
| Thermal Performance | 0.36 °C/W θJC - Enables compact heatsinking in space-constrained remote radio units (RRUs) without forced air cooling. |
| W-CDMA Linearity | ACPR < –55 dBc @ 5 MHz offset - Meets 3GPP TS 37.101 spectral mask requirements for Band 3/1 base stations without digital predistortion overhead. |
| Robustness | 10:1 VSWR tolerance at rated power - Survives antenna mismatch events in deployed macro sites without protection circuitry or shutdown logic. |
| Process Technology | NXP Gen 9 LDMOS - Delivers improved ruggedness and reliability over prior generations, qualified to JESD22-A108 stress testing standards. |
Applications
| Macro Base Station Final Stage | Multi-Band LTE Remote Radio Unit |
|---|---|
|
Use Scenario: Final RF power amplification stage in 4T4R macro eNodeB operating on LTE Band 3 (1800 MHz) with 20 MHz channel bandwidth and 64-QAM modulation. IC Role / Device Role / Timing Role: High-efficiency, high-linearity RF power transistor delivering 32 W avg. output while maintaining ACPR < –55 dBc and adjacent channel leakage ratio compliance. Use Value: Enables single-device final stage for 2×2 MIMO carriers, reducing component count and PCB area versus dual-device solutions while meeting EVM < 3.5%. |
Use Scenario: Compact RRU module supporting simultaneous Band 1 (2100 MHz) and Band 3 (1800 MHz) operation in urban small-cell aggregation nodes. IC Role / Device Role / Timing Role: Dual-band capable RF power amplifier with broadband 1805–1995 MHz coverage, used in shared PA architecture with frequency-selective filtering. Use Value: Reduces bill-of-materials by enabling one PA design across two LTE bands, minimizing calibration complexity and factory test time. |
| Outdoor Distributed Antenna System | Carrier Aggregation Transmitter |
|
Use Scenario: Outdoor DAS head-end unit amplifying multiple 1800 MHz carriers for distributed coverage across stadiums or transportation hubs. IC Role / Device Role / Timing Role: Linear RF power transistor handling multi-carrier W-CDMA signals with peak-to-average power ratio up to 10.5 dB. Use Value: Maintains intermodulation distortion below –35 dBc across 3-carrier configuration, avoiding in-band interference in dense spectral environments. |
Use Scenario: Component in 3CC (three-component carrier) LTE-A transmitter combining Band 3 + Band 7 + Band 20 for 60 MHz aggregate bandwidth. IC Role / Device Role / Timing Role: Final-stage PA for Band 3 segment, operating in conjunction with isolators and circulators to manage wideband harmonic content. Use Value: Delivers consistent 31.6% efficiency across 1805–1995 MHz sweep, enabling predictable thermal design for multi-PA carrier aggregation modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| A2T18S162W31SR3 | 32 W avg. output, 20.1 dB gain @ 1840 MHz, 33.9% efficiency, same NI-780S-2L2LA package | Optimized for narrower 1805–1880 MHz range (Band 3 only); slightly higher gain and efficiency but less bandwidth flexibility | Select when targeting Band 3-only deployments where maximum efficiency at center frequency is prioritized over multi-band coverage. |
| AFT18S260W31SR3 | 50 W avg. output, 19.8 dB gain @ 1880 MHz, 29.3% efficiency, same NI-780S-2L2LA package | Higher output capability with trade-off in efficiency; requires more aggressive thermal management and larger output filtering | Choose when system-level output requirement exceeds 32 W and additional headroom is needed for aging or temperature derating. |
Compared with A2T18S160W31SR3, A2T18S162W31SR3 offers better efficiency in narrowband Band 3 use cases, while AFT18S260W31SR3 provides 56% more output power at the cost of 2.3 percentage points lower efficiency-making it suitable for higher-power tiers where thermal budget allows.
Availability
A2T18S160W31SR3 is available at Aetrix Electronics and suitable for macro base station final stages, remote radio units, and distributed antenna systems requiring stable component supply and long-term lifecycle support.
Supply support for A2T18S160W31SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in RF power innovation with over 60 years of experience, specializing in high-reliability semiconductor solutions for wireless infrastructure and industrial markets.
A2T18S160W31SR3 belongs to NXP's RF Cellular Infrastructure portfolio, engineered specifically for energy-efficient, thermally robust W-CDMA/LTE macro base station amplifiers operating in the 1.8–2.0 GHz spectrum.
FAQ
What is the recommended gate bias voltage for stable operation of the A2T18S160W31SR3?
The A2T18S160W31SR3 is specified for Class AB operation with a nominal gate bias voltage of 2.95 V ±0.15 V at 25 °C case temperature. This setting achieves optimal trade-off between gain flatness, efficiency, and ACPR performance under W-CDMA signal conditions. The A2T18S160W31SR3 datasheet specifies gate current of 12 mA typical at this bias point, requiring a low-noise, well-regulated bias supply with <1 mV ripple to maintain linearity.
Does the A2T18S160W31SR3 require external input/output matching networks?
No, the A2T18S160W31SR3 features fully integrated 50 Ω input and output matching across its 1805–1995 MHz operating band. External matching is not required for standard applications, though narrowband harmonic filters or diplexers may be added downstream depending on system spectral mask requirements. The A2T18S160W31SR3's internal matching eliminates sensitivity to PCB parasitics that commonly affect unmatched discrete transistors.
What thermal interface material is recommended for mounting the A2T18S160W31SR3?
NXP recommends a thermally conductive, non-silicone-based solder paste (e.g., Indium Corporation 5.0Ag alloy) for attaching the A2T18S160W31SR3's exposed thermal slug to the PCB copper pour. Conductive epoxy or thermal pads are not advised due to higher thermal resistance and long-term reliability concerns. The A2T18S160W31SR3's 0.36 °C/W θJC rating assumes full-surface solder attachment with ≤10 μm voiding per IPC-7095 guidelines.
Can the A2T18S160W31SR3 be used in pulsed radar applications?
The A2T18S160W31SR3 is characterized and qualified exclusively for continuous-wave and modulated communication signals (W-CDMA, LTE), not pulsed radar waveforms. Its safe operating area (SOA) and transient thermal response are not validated for high-duty-cycle pulse operation. For radar applications in the 1.8–2.0 GHz band, NXP recommends dedicated radar-grade parts such as the A2T20H330W24SR6. Using the A2T18S160W31SR3 outside its specified envelope risks premature failure.
Is the A2T18S160W31SR3 compliant with RoHS and REACH regulations?
Yes, the A2T18S160W31SR3 is fully compliant with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, including SVHC candidate list updates through Q2 2023. It contains no lead in solderable terminations (lead-free matte tin finish), and all packaging materials meet halogen-free requirements per IEC 61249-2-21. Compliance documentation for the A2T18S160W31SR3 is available via NXP's product change notification portal.
A2T18S160W31SR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780S-2L2LA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.88GHz
- Gain:
- 19.9dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 1 A
- Power - Output:
- 32W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- NI-780S-2L2LA
A2T18S160W31SR3 FAQ
1.How can I place an order for A2T18S160W31SR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2T18S160W31SR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2T18S160W31SR3 reliable?
The price and inventory of A2T18S160W31SR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2T18S160W31SR3 is usually 5 days.
3.What payment methods are accepted for A2T18S160W31SR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A2T18S160W31SR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for A2T18S160W31SR3?
A2T18S160W31SR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2T18S160W31SR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2T18S160W31SR3?
For technical support, including A2T18S160W31SR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2T18S160W31SR3 requirements.
6.How does Aetrix verify that A2T18S160W31SR3 is sourced from the original manufacturer or authorized distributors?
All A2T18S160W31SR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2T18S160W31SR3 meets industry standards.
7.What is the process for return or replacement of A2T18S160W31SR3?
All A2T18S160W31SR3 units undergo pre-shipment inspection (PSI). If there is an issue with A2T18S160W31SR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2T18S160W31SR3 part is unused and in its original packaging.
Return procedure for A2T18S160W31SR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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