NXP Semiconductors A2T18S162W31GSR3

Overview

A2T18S162W31GSR3 from NXP Semiconductors is a 32 W average RF power transistor designed for W-CDMA cellular infrastructure amplification in the 1805–1880 MHz band, operating at 28 V supply with 20.1 dB gain and 33.9% drain efficiency. It serves as a final-stage driver in macro base station transceivers requiring high linearity and thermal stability.

For engineers reviewing the A2T18S162W31GSR3 datasheet, A2T18S162W31GSR3 pinout, A2T18S162W31GSR3 application, or A2T18S162W31GSR3 equivalent, this page delivers verified package mapping, thermal resistance (θ_JC = 0.36 °C/W), matched input/output impedance, and direct alternatives for LTE/W-CDMA 1800 MHz band deployment.

Technical Context

This LDMOS-based RF power transistor features fully matched input and output networks optimized for 1805–1880 MHz operation under W-CDMA signal conditions. Its internal matching eliminates external tuning components for standard 50 Ω systems, reducing PCB footprint and design complexity.

The device uses a thermally enhanced NI-780GS-2L2LA overmolded plastic package with integrated copper slug and solderable flange, enabling efficient heat transfer to heatsinks via bottom-side thermal interface. Biasing is configured for Class AB operation with fixed gate voltage control.

Key Specifications

Pinout & Package

NI-780GS-2L2LA is a 2-lead overmolded plastic package with isolated source terminals, integrated copper thermal slug, and solderable flange for direct mounting to heatsinks. The package supports surface-mount reflow assembly and provides mechanical robustness for high-vibration environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with A2T18S162W31GSR3, the A2T18S162W31SR3 offers identical RF performance with cost-optimized packaging, while A2T18S160W31GSR3 trades 2.3% efficiency and 0.2 dB gain for extended upper-frequency coverage - both require no PCB redesign but serve distinct system-level trade-offs.

Availability

A2T18S162W31GSR3 is available at Aetrix Electronics and suitable for macro base stations, private LTE infrastructure, public safety repeaters, and small cell RRHs requiring stable component supply and long-term lifecycle assurance.

Supply support for A2T18S162W31GSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in RF power innovation with over 60 years of experience, specializing in high-reliability LDMOS and GaN transistors for wireless infrastructure and industrial applications.

A2T18S162W31GSR3 belongs to NXP's A2T series of matched RF power transistors engineered specifically for W-CDMA/LTE macro base station final-stage amplification in the 1800 MHz band.

FAQ

What is the maximum junction temperature rating for A2T18S162W31GSR3?

The A2T18S162W31GSR3 has a maximum rated junction temperature (T_J) of 200 °C per NXP's official specification. This rating is validated under continuous DC operation and applies to pulsed RF conditions with appropriate thermal management. Derating curves are provided in the A2T18S162W31GSR3 datasheet for operation above 150 °C ambient.

Does A2T18S162W31GSR3 require external matching components?

No - A2T18S162W31GSR3 integrates fully matched input and output networks optimized for 50 Ω systems across 1805–1880 MHz. External matching is unnecessary for standard W-CDMA base station applications, though harmonic filtering remains required at the drain output per A2T18S162W31GSR3 application notes.

Is A2T18S162W31GSR3 pin-compatible with A2T18S162W31SR3?

Yes - A2T18S162W31GSR3 and A2T18S162W31SR3 share identical pinout, footprint, and mechanical dimensions (NI-780GS-2L2LA vs. NI-780S-2L2LA). The only difference is gold plating on the flange of the GSR3 variant; both mount identically and require the same PCB land pattern.

What is the typical ACPR performance of A2T18S162W31GSR3 at 32 W average output?

A2T18S162W31GSR3 achieves ACPR of –45.2 dBc (typical) at 5 MHz offset under W-CDMA 64-ch test signal at 32 W average output and 28 V supply. This meets 3GPP TS 34.121-1 requirements for BTS Class 3 and supports linearization techniques including digital predistortion (DPD).

How does the thermal resistance of A2T18S162W31GSR3 compare to similar NI-780 packages?

A2T18S162W31GSR3 achieves θ_JC = 0.36 °C/W - among the lowest in the NI-780 family - due to optimized copper slug thickness and flange metallization. This is 0.05 °C/W lower than A2T18S160W31GSR3 (0.41 °C/W) and 0.12 °C/W better than legacy OM-780 variants, directly enabling higher sustained output power in space-constrained designs.