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NXP Semiconductors A2T18S165-12SR3
- Part No.:
- A2T18S165-12SR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780-2S2L
- Datasheet:
-
A2T18S165-12SR3.pdf
- Description:
- RF MOSFET LDMOS 28V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:2,114
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Product details
Overview
A2T18S165-12SR3 from NXP Semiconductors is an N-channel enhancement-mode RF power LDMOS transistor designed for cellular base station final-stage amplification in the 1805–1995 MHz band. It delivers 38 W average output power at 28 Vdc, 800 mA quiescent drain current, and achieves 18.0 dB power gain with 34.3% drain efficiency under single-carrier W-CDMA conditions (PAR = 9.9 dB).
For engineers reviewing the A2T18S165-12SR3 datasheet, A2T18S165-12SR3 pinout, A2T18S165-12SR3 application, or A2T18S165-12SR3 equivalent, this device is selected for Doherty PA architectures requiring high linearity, robust load mismatch tolerance (VSWR 10:1), and digital predistortion compatibility in LTE macrocell infrastructure.
Technical Context
The A2T18S165-12SR3 employs a laterally diffused MOS structure optimized for broadband RF power amplification in Class AB and Class C operation. Its extended negative gate-source voltage range (–6.0 V) enables stable biasing in high-efficiency Doherty configurations and supports precise gate control under dynamic signal conditions.
Internally matched for 50 Ω input and output impedance across 1805–1995 MHz, it integrates thermal design features including low junction-to-case thermal resistance (0.39 °C/W) and operates up to +225 °C junction temperature. ESD protection meets HBM Class 2, MM Class A, and CDM Class IV standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1995 MHz - Covers entire LTE Band 3 (1805–1880 MHz UL) and Band 2 (1930–1995 MHz UL) for macrocell base stations. |
| Output Power (Avg.) | 38 W @ 28 Vdc, 800 mA IDQ - Sustains full LTE signal envelope with 9.9 dB PAR without compression-induced distortion. |
| Power Gain | 18.0 dB typical - Enables compact two-stage PA designs with sufficient margin before driver stage saturation. |
| Drain Efficiency | 34.3% typical - Reduces thermal load and DC power consumption in energy-sensitive outdoor RRUs. |
| ACPR | –34.2 dBc @ ±5 MHz offset - Meets 3GPP ACLR requirements for adjacent channel leakage in multi-carrier deployments. |
| Input Return Loss | –17 dB typical - Minimizes reflected power and stabilizes driver stage performance without external matching. |
| Thermal Resistance | 0.39 °C/W (RθJC) - Supports high-power CW operation at case temperature ≤75 °C with standard heatsinking. |
Pinout & Package
Package: NI-780S-2L2L - Air-cavity ceramic/metal flanged package with solderable baseplate, optimized for high-frequency RF performance and thermal dissipation in macrocell PA modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| RFin / VGS | RF input & gate bias terminal | Accepts RF drive signal and DC gate bias; internally matched to 50 Ω; requires external decoupling for stable Class AB/C operation. |
| VBW (1) | Bias feed terminal (pin 2) | Provides DC path for gate bias; not intended for VDD current supply per datasheet warning - must be used only for bias network connection. |
| VBW (1) | Bias feed terminal (pin 4) | Second dedicated gate bias feed point; enables symmetric bias distribution and improved thermal stability in high-current operation. |
| RFout / VDS | RF output & drain supply terminal | Delivers amplified RF output and accepts 28 Vdc drain supply; electrically isolated from package base; requires external RF choke and DC blocking. |
Key Features
| Feature | Design Value |
|---|---|
| Extended VGS range | –6.0 V to +10 V - Enables deep Class C operation and robust gate control during large-signal transients in Doherty carrier/peaking paths. |
| Digital predistortion (DPD) optimization | Low AM/PM distortion (–14.5° max) and flat gain vs. temperature (0.011 dB/°C) - Ensures linearization convergence and stability over environmental and power variations. |
| Doherty architecture support | Internally matched I/O + high load mismatch tolerance (VSWR 10:1 at 32 V, 224 W) - Eliminates need for external isolators and simplifies combiner design in asymmetric Doherty PAs. |
| High-reliability packaging | NI-780S-2L2L with air cavity and copper-tungsten base - Achieves MTTF >1 million hours at 75 °C case temperature per NXP calculator. |
| ESD robustness | HBM Class 2 (2 kV), MM Class A, CDM Class IV - Survives handling and board-level assembly without special ESD precautions beyond standard protocols. |
Applications
| Macrocell Base Station Transmitter | LTE Band 3 (1800 MHz) Infrastructure |
|---|---|
|
Use Scenario: Final-stage power amplifier in outdoor remote radio units (RRUs) operating in urban macrocell deployments with multi-carrier LTE signals. IC Role / Device Role / Timing Role: High-efficiency RF power transistor delivering 38 W avg. output into 50 Ω load while maintaining ACLR < –45 dBc after DPD correction. Use Value: Enables 2×2 MIMO operation with single-device per chain, reducing bill-of-materials and thermal footprint versus dual-transistor solutions. |
Use Scenario: Uplink power amplifier in Band 3 (1805–1880 MHz) base stations serving dense subscriber populations in Asia-Pacific regions. IC Role / Device Role / Timing Role: Primary RF power device biased in Class AB, supporting 20 MHz channel bandwidth and 9.9 dB PAR with minimal ACPR degradation. Use Value: Delivers 18.0 dB gain and 34.3% efficiency at 1840 MHz - reduces driver stage complexity and improves overall system power-added efficiency (PAE). |
| LTE Band 2 (1900 MHz) Macrocell | Doherty Power Amplifier Module |
|
Use Scenario: Final-stage PA in North American Band 2 (1930–1995 MHz) macrocells requiring compliance with FCC spectral mask and ACLR limits. IC Role / Device Role / Timing Role: Single-carrier W-CDMA and LTE PA core delivering 38 W avg. output with –34.4 dBc ACPR at 1960 MHz. Use Value: Maintains <0.15 dB gain flatness over 75 MHz bandwidth - ensures consistent modulation accuracy across full band without adaptive tuning. |
Use Scenario: Peaking path transistor in asymmetrical Doherty amplifier architecture for next-generation massive MIMO base stations. IC Role / Device Role / Timing Role: High-linearity peaking device activated above back-off region; leverages extended negative VGS range for precise turn-on timing alignment with carrier path. Use Value: Supports >6 dB instantaneous bandwidth enhancement and >15% PAE improvement at 6 dB back-off versus conventional Class AB designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6P21190HR5 | Higher P1dB (190 W) but narrower bandwidth (1805–1880 MHz only); 0.45 °C/W RθJC; requires external input/output matching. | Best suited for fixed-band 1800 MHz systems where peak power >148 W is required; less suitable for wideband 1900 MHz operation. | Select when absolute peak power and narrowband efficiency outweigh broadband coverage and internal matching convenience. |
| AFM905S | Lower average power (25 W); 26 V operation; smaller NI-780-4L package; 0.52 °C/W RθJC; no VBW pins. | Targeted at small-cell and microcell base stations with lower thermal budget and space constraints; not rated for macrocell VSWR 10:1 stress. | Select for cost-sensitive, lower-power indoor/outdoor small cells where footprint and thermal mass are critical. |
Compared with MRF6P21190HR5 and AFM905S, the A2T18S165-12SR3 uniquely balances 38 W average power, 1805–1995 MHz coverage, internal 50 Ω matching, and Doherty-optimized bias architecture - making it the preferred choice for flexible, wideband macrocell PA designs requiring field-proven reliability and DPD compatibility.
Availability
A2T18S165-12SR3 is available at Aetrix Electronics and suitable for cellular infrastructure, macrocell base station transmitter modules, and Doherty power amplifier development requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for Tier-1 OEM programs.
Supply support for A2T18S165-12SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in high-performance RF power solutions, with deep expertise in LDMOS technology, thermal modeling, and cellular infrastructure semiconductor design.
The A2T18S165-12SR3 belongs to NXP's AIRFAST® RF Power portfolio, engineered specifically for energy-efficient, high-linearity, thermally robust macrocell and massive MIMO base station amplifiers operating in licensed sub-6 GHz bands.
FAQ
What is the maximum continuous drain voltage rating for the A2T18S165-12SR3?
The A2T18S165-12SR3 has a maximum drain-source voltage (VDSS) rating of +65 Vdc and –0.5 Vdc. This allows safe operation under transient voltage spikes common in RF PA circuits while maintaining gate oxide integrity during negative swing events. The device is rated for 32 Vdc operating voltage, with 28 Vdc being the recommended nominal supply for specified RF performance.
Does the A2T18S165-12SR3 require external input/output matching networks?
No - the A2T18S165-12SR3 is internally matched to 50 Ω on both input and output across its full 1805–1995 MHz operating band. This eliminates discrete matching components in most reference designs, reducing PCB area, insertion loss, and tuning complexity. External DC blocking and bias chokes remain necessary per the NXP test circuit layout.
How does the A2T18S165-12SR3 perform under high VSWR conditions?
The A2T18S165-12SR3 is characterized for unconditional stability and demonstrated no device degradation when subjected to 10:1 VSWR at 32 Vdc and 224 W CW output power - a 3 dB overdrive condition relative to its 166 W CW rating. This ruggedness enables reliable operation in real-world antenna mismatch scenarios without protection circuitry.
What thermal management guidance applies to the A2T18S165-12SR3?
The A2T18S165-12SR3 has a junction-to-case thermal resistance (RθJC) of 0.39 °C/W. For continuous 38 W average operation at 28 Vdc, the case temperature must be maintained ≤75 °C using a properly sized heatsink with low thermal interface resistance. NXP provides an electromigration MTTF calculator and AN1955 thermal measurement methodology for design validation.
Is the A2T18S165-12SR3 compatible with digital predistortion (DPD) systems?
Yes - the A2T18S165-12SR3 is explicitly designed for DPD-enabled transmitters. Its low AM/PM distortion (–14.5° max), tight gain flatness (0.15 dB over 75 MHz), and stable small-signal gain vs. temperature (0.011 dB/°C) enable rapid DPD convergence and sustained linearity across environmental and aging conditions. NXP provides .s2p models and RF high-power simulation tools to support DPD algorithm development.
A2T18S165-12SR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780-2S2L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.805GHz ~ 1.995GHz
- Gain:
- 18dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 800 mA
- Power - Output:
- 148W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-780-2S2L
A2T18S165-12SR3 FAQ
1.How can I place an order for A2T18S165-12SR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2T18S165-12SR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2T18S165-12SR3 reliable?
The price and inventory of A2T18S165-12SR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2T18S165-12SR3 is usually 5 days.
3.What payment methods are accepted for A2T18S165-12SR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A2T18S165-12SR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for A2T18S165-12SR3?
A2T18S165-12SR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2T18S165-12SR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2T18S165-12SR3?
For technical support, including A2T18S165-12SR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2T18S165-12SR3 requirements.
6.How does Aetrix verify that A2T18S165-12SR3 is sourced from the original manufacturer or authorized distributors?
All A2T18S165-12SR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2T18S165-12SR3 meets industry standards.
7.What is the process for return or replacement of A2T18S165-12SR3?
All A2T18S165-12SR3 units undergo pre-shipment inspection (PSI). If there is an issue with A2T18S165-12SR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2T18S165-12SR3 part is unused and in its original packaging.
Return procedure for A2T18S165-12SR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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