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NXP Semiconductors A2T18S166W12SR3
- Part No.:
- A2T18S166W12SR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780-2S2L
- Datasheet:
-
A2T18S166W12SR3.pdf
- Description:
- RF MOSFET LDMOS NI780
- Quantity:
- Payment:
- Shipping:
Inventory:4,268
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Product details
Overview
A2T18S166W12SR3 from NXP Semiconductors is a 38 W average RF power LDMOS transistor designed for cellular base station amplifiers operating in the 1805–1995 MHz band. It delivers 18.6 dB power gain, 32.8% drain efficiency, and –34.0 dBc ACPR at 1995 MHz under W-CDMA conditions (VDD = 28 V, IDQ = 800 mA, Pout = 38 W avg., PAR = 9.9 dB), optimized for Doherty architectures.
For engineers reviewing the A2T18S166W12SR3 datasheet, A2T18S166W12SR3 pinout, A2T18S166W12SR3 application, or A2T18S166W12SR3 equivalent, this device supports wide instantaneous bandwidth operation, withstands high VSWR loads, and enables high-efficiency, broadband macrocell and small-cell PA designs with validated thermal resistance of 0.38 °C/W.
Technical Context
This N-channel enhancement-mode lateral MOSFET operates as a high-power RF amplifier stage in base station transceivers. Its internal input/output matching, NI-780S-2L2L package with dual VBW pins, and gate threshold voltage of 1.4–2.5 Vdc enable stable Class AB or Class C biasing across 1805–1995 MHz.
The device features a junction-to-case thermal resistance of 0.38 °C/W at 38 W CW, supports pulsed CW load-pull tuning up to 222 W PEP, and maintains <0.2 dB gain flatness over 75 MHz bandwidth - critical for multi-carrier W-CDMA and LTE-A deployments requiring broadband linearity and efficiency trade-off control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1995 MHz: Full-band operation covering LTE Band 3 (1805–1880 MHz) and Band 39 (1880–1920 MHz), plus extended TDD-LTE coverage up to 1995 MHz. |
| Output Power (Avg.) | 38 W: Sustained average output under single-carrier W-CDMA with 9.9 dB PAR, enabling 2×2 MIMO macrocell PA stages without derating. |
| Power Gain | 17.2–20.2 dB: Typical 18.1 dB at 1840 MHz ensures ≥15 dB system gain margin before driver stage compression. |
| Drain Efficiency | 32.0–34.4%: Measured at 38 W avg. output; supports thermal management in air-cooled outdoor enclosures with ≤74 °C case temperature. |
| ACPR (±5 MHz) | –34.7 dBc typical: Meets 3GPP ACLR requirements for 20 MHz LTE channels without external predistortion overhead. |
| Thermal Resistance | 0.38 °C/W: Enables direct heatsink mounting with minimal thermal interface resistance for long-term reliability at TC = 74 °C. |
| VSWR Tolerance | 10:1 at 32 Vdc, 214 W pulsed: Confirmed robustness under mismatched antenna conditions without degradation - critical for remote radio head deployment. |
Pinout & Package
Package: NI-780S-2L2L - thermally enhanced air-cavity ceramic/metal package with integrated source tab, rated for 150 °C case temperature and optimized for RF grounding via bottom-side metal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (RFin/VGS) | RF Input / Gate Bias Terminal | Primary gate connection; accepts DC bias (VGS(Q) = 2.2–3.0 Vdc) and RF drive; requires external DC blocking and impedance matching. |
| 2 (VBW) | Bias Feed / VDD Return Path | Second bias feed point; used with Pin 4 to supply VDD current and reduce inductive loop area for improved stability at >1.8 GHz. |
| 3 (RFout/VDS) | RF Output / Drain Terminal | Main RF power output and high-current drain path; connected directly to output matching network and heatsink via source tab. |
| 4 (VBW) | Bias Feed / VDD Return Path | Redundant bias feed terminal; paired with Pin 2 to distribute VDD current and minimize parasitic inductance in high-frequency switching paths. |
Key Features
| Feature | Design Value |
|---|---|
| Wide Instantaneous Bandwidth | 190 MHz contiguous coverage (1805–1995 MHz) with <0.2 dB gain flatness - eliminates need for band-switching or multiple PAs in multi-standard base stations. |
| Doherty-Optimized Architecture | Enhanced negative VGS range (–6.0 Vdc) and gate charge characteristics enable precise carrier/peaking transistor timing alignment for >10% efficiency improvement vs. conventional PAs. |
| High VSWR Robustness | Validated operation at 10:1 load mismatch with no degradation at 214 W pulsed - reduces need for circulators or isolators in antenna interface design. |
| Internally Matched I/O | 50 Ω input and output impedance at package reference plane simplifies PCB layout; eliminates discrete matching components in narrowband implementations. |
| ESD Protection | HBM Class 2 (≥2 kV), CDM Class C3 - meets industrial handling requirements without additional on-board protection circuitry. |
Applications
| Macrocell Base Station PA | Small-Cell Remote Radio Head |
|---|---|
|
Use Scenario: High-power final-stage amplifier in 4T4R LTE-A eNodeB supporting 20+ MHz channel bandwidths and 256-QAM modulation. IC Role / Device Role / Timing Role: RF power transistor delivering 38 W avg. output per chain with linearized ACPR performance across 1805–1995 MHz. Use Value: Enables single-device PA solution for Band 3/Band 39 aggregation, reducing bill-of-materials count and improving thermal uniformity versus multi-die alternatives. |
Use Scenario: Compact, air-cooled PA module in outdoor distributed antenna system (DAS) node serving dense urban environments. IC Role / Device Role / Timing Role: Primary power amplifier stage operating in Class AB with digital pre-distortion (DPD) feedback loop. Use Value: 0.38 °C/W RθJC allows passive heatsinking at ambient up to 55 °C, eliminating fan requirement and lowering system acoustic noise and power consumption. |
| Doherty Amplifier Carrier Stage | Multi-Carrier W-CDMA Transmitter |
|
Use Scenario: Carrier amplifier in asymmetric Doherty configuration with A2T18S166W12SR3 paired with peaking device for 5G NR mid-band extension. IC Role / Device Role / Timing Role: Linear, high-efficiency carrier transistor biased at 800 mA quiescent current with optimized gate voltage range for phase alignment. Use Value: Achieves 72.6% peak drain efficiency at P1dB under load-pull tuning - extends battery backup runtime in off-grid cell sites. |
Use Scenario: Final PA in UMTS FDD Node B supporting six-carrier W-CDMA with 9.9 dB PAR and 3.84 MHz channel spacing. IC Role / Device Role / Timing Role: RF power transistor delivering 38 W avg. output while maintaining –34.7 dBc ACPR and –19 dB IRL across full band. Use Value: Validated PAR compression behavior (6.8 dB typical) ensures predictable DPD convergence and reduces calibration time during field deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| A2T18S166W12S | No R3 suffix; supplied in bulk or different reel packaging (non-R3 tape/reel), identical electrical specs and NI-780S-2L2L package. | Same functional use in production lines where automated pick-and-place requires R3 tape format; R3 variant adds 250-unit 44 mm tape compatibility. | Select A2T18S166W12SR3 for SMT assembly with 13-inch reels; choose A2T18S166W12S for manual prototyping or non-tape-based placement. |
| MRF6VP2300HR5 | 300 W PEP GaN HEMT; higher gain (19.5 dB), wider bandwidth (1805–2200 MHz), but requires external input matching and has higher gate sensitivity. | Used in high-power macrocell main arrays; not drop-in due to different biasing (–2.5 V VGS), thermal interface, and gate protection requirements. | Choose MRF6VP2300HR5 only when >100 W PEP or >2.2 GHz extension is required; A2T18S166W12SR3 remains optimal for cost-sensitive 38 W avg. Doherty carrier stages. |
Compared with A2T18S166W12SR3, the A2T18S166W12S offers identical RF performance but lacks tape-and-reel logistics for high-volume SMT, while MRF6VP2300HR5 provides higher peak power at the cost of increased design complexity, gate protection circuitry, and thermal management demands.
Availability
A2T18S166W12SR3 is available at Aetrix Electronics and suitable for macrocell base station PA modules, small-cell remote radio heads, Doherty carrier amplifiers, and multi-carrier W-CDMA transmitters requiring stable component supply and long-lifecycle support.
Supply support for A2T18S166W12SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies.
The A2T18S166W12SR3 belongs to NXP's AIRFAST RF Power LDMOS family, engineered specifically for energy-efficient, broadband cellular infrastructure amplifiers operating in licensed sub-2 GHz spectrum bands.
FAQ
What is the maximum continuous drain current rating for A2T18S166W12SR3?
The A2T18S166W12SR3 does not specify a maximum continuous drain current (ID) rating; instead, its safe operating area is defined by VDS, VGS, and thermal limits. Under typical 38 W avg. W-CDMA operation at VDD = 28 Vdc and IDQ = 800 mA, peak pulsed current reaches ~12 A. The device's absolute maximum VDS is +65 Vdc, and junction temperature must remain ≤225 °C.
Does A2T18S166W12SR3 require external input/output matching networks?
No - the A2T18S166W12SR3 is internally matched to 50 Ω at both input and output within the 1805–1995 MHz band, as confirmed in NXP's test circuit documentation and load-pull data. External matching is optional and typically used only for fine-tuning gain flatness or optimizing efficiency at band edges.
What is the recommended gate bias voltage for Class AB operation of A2T18S166W12SR3?
The A2T18S166W12SR3 specifies a typical gate quiescent voltage (VGS(Q)) of 2.7 Vdc at VDD = 28 Vdc and IDQ = 800 mA. For stable Class AB operation, bias should be set between 2.2 Vdc (min) and 3.0 Vdc (max) using a low-noise, well-regulated gate supply with adequate decoupling per NXP AN1908 guidelines.
Can A2T18S166W12SR3 be used in pulsed-CW mode above its 38 W average rating?
Yes - the A2T18S166W12SR3 supports pulsed-CW operation up to 222 W PEP (P3dB) at 1840 MHz with 10 µsec pulse width and 10% duty cycle, as verified in Table 7 load-pull data. Thermal design must ensure case temperature stays ≤74 °C during sustained pulsing to maintain MTTF and avoid junction overheating.
What is the meaning of the 'R3' suffix in A2T18S166W12SR3?
The 'R3' suffix in A2T18S166W12SR3 indicates tape-and-reel packaging: 250 units per reel, 44 mm tape width, and 13-inch reel diameter - optimized for high-speed surface-mount assembly. This differs from the base part A2T18S166W12S, which may ship in bulk or alternate packaging formats.
A2T18S166W12SR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780-2S2L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.805GHz ~ 1.995GHz
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- 38W
- Voltage - Rated:
- 28 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-780-2S2L
A2T18S166W12SR3 FAQ
1.How can I place an order for A2T18S166W12SR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2T18S166W12SR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2T18S166W12SR3 reliable?
The price and inventory of A2T18S166W12SR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2T18S166W12SR3 is usually 5 days.
3.What payment methods are accepted for A2T18S166W12SR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A2T18S166W12SR3 transactions.
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4.How is shipping managed for A2T18S166W12SR3?
A2T18S166W12SR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2T18S166W12SR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2T18S166W12SR3?
For technical support, including A2T18S166W12SR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2T18S166W12SR3 requirements.
6.How does Aetrix verify that A2T18S166W12SR3 is sourced from the original manufacturer or authorized distributors?
All A2T18S166W12SR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2T18S166W12SR3 meets industry standards.
7.What is the process for return or replacement of A2T18S166W12SR3?
All A2T18S166W12SR3 units undergo pre-shipment inspection (PSI). If there is an issue with A2T18S166W12SR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2T18S166W12SR3 part is unused and in its original packaging.
Return procedure for A2T18S166W12SR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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