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NXP Semiconductors A2T18S260W12NR3
- Part No.:
- A2T18S260W12NR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-880X-2L2L
- Datasheet:
-
A2T18S260W12NR3.pdf
- Description:
- RF MOSFET LDMOS 28V OM880X-2L2L
- Quantity:
- Payment:
- Shipping:
Inventory:8,313
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Product details
Overview
A2T18S260W12NR3 from NXP Semiconductors (formerly Freescale) is an RF power LDMOS transistor designed as a high-efficiency, wide-bandwidth final-stage amplifier for cellular base station transmitters operating in the 1805–1880 MHz band. It delivers 56 W average output power at 28 Vdc with 34.4% drain efficiency and 18.7 dB power gain at 1880 MHz under single-carrier W-CDMA conditions (PAR = 9.9 dB, 0.01% CCDF).
For engineers reviewing the A2T18S260W12NR3 datasheet, A2T18S260W12NR3 pinout, A2T18S260W12NR3 application, or A2T18S260W12NR3 equivalent, key selection criteria include its 1805–1880 MHz instantaneous bandwidth, ability to withstand 10:1 VSWR load mismatch at 32 Vdc, optimized Doherty configuration support, and thermal resistance of 0.23 °C/W (junction-to-case).
Technical Context
This N-channel enhancement-mode lateral MOSFET operates with gate threshold voltage of 1.4–2.2 Vdc and quiescent gate voltage of 2.1–2.9 Vdc at IDQ = 1500 mA. Its internal input/output matching enables broadband operation without external matching networks across the full 75 MHz bandwidth.
The device supports dual VBW pin configuration (pins 2 and 4) for VDD current delivery below 90 W average output, and features a thermally enhanced plastic OM-880X-2L2L package with exposed source on the backside. Its AM/PM distortion is limited to –13° maximum across 1805–1880 MHz at P3dB compression.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1880 MHz - fully specified instantaneous bandwidth for LTE FDD Band 3 (1805–1880 MHz) infrastructure applications |
| Avg. Output Power | 56 W @ 28 Vdc, IDQ = 1500 mA - rated for continuous W-CDMA signal with 9.9 dB PAR at 0.01% CCDF probability |
| Power Gain | 18.7 dB typ. @ 1880 MHz - enables compact driver stage design with ≥17 dB minimum gain across full band |
| Drain Efficiency | 34.4% typ. @ 1880 MHz - reduces thermal load and DC power consumption in macrocell PA modules |
| Thermal Resistance | 0.23 °C/W junction-to-case - supports high-power density PCB layouts with direct heatsink mounting |
| VSWR Tolerance | 10:1 load mismatch survivability at 32 Vdc, 295 W pulsed CW - ensures robust operation under antenna detuning or fault conditions |
| ACPR | –34.4 dBc @ ±5 MHz offset - meets 3GPP ACLR requirements for 5 MHz channel spacing in LTE base stations |
Pinout & Package
Package: OM-880X-2L2L, over-molded plastic with exposed copper source pad on backside (thermal path to heatsink). Dimensions per NXP specification: 10.16 mm × 10.16 mm × 4.57 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - RFin / VGS | RF input & gate bias terminal | Primary gate connection; accepts DC bias and RF drive; requires external gate resistor network for stability |
| 2 - VBW (1) | VDD supply terminal (pin 2) | One of two parallel VDD paths; usable up to 90 W avg. output; must be decoupled with low-ESR capacitors |
| 3 - RFout / VDS | RF output & drain terminal | High-current drain node; connects to output matching network; exposed backside is electrically tied to this node via source |
| 4 - VBW (1) | VDD supply terminal (pin 4) | Second parallel VDD path; used with pin 2 for current sharing; identical electrical function to pin 2 |
Key Features
| Feature | Design Value |
|---|---|
| Wide instantaneous bandwidth | 75 MHz flat gain response (0.4 dB variation) across 1805–1880 MHz - eliminates need for tunable or switchable matching in multi-band base stations |
| Enhanced negative VGS range | –6.0 Vdc gate-source rating - enables stable Class C and Doherty carrier amplifier biasing with improved linearity headroom |
| Doherty-optimized architecture | Internally matched input/output with defined Zin/Zload contours - simplifies integration into asymmetric Doherty combiners without iterative EM tuning |
| High VSWR ruggedness | Survives 10:1 mismatch at 32 Vdc, 295 W pulsed CW - eliminates external circulator or isolator in cost-sensitive macrocell designs |
| Thermal performance | 0.23 °C/W RθJC measured at 56 W CW, 28 Vdc, 1840 MHz - enables >100 W thermal derating margin before reaching 225°C max junction temperature |
Applications
| Macrocell Base Station Transmitter | Distributed Antenna System (DAS) Hub |
|---|---|
|
Use Scenario: High-power RF final stage in 4T4R LTE eNodeB supporting 20 MHz channel bandwidth and 256-QAM modulation. IC Role / Device Role / Timing Role: Main amplifier in Doherty PA architecture delivering 56 W avg. output with <–34 dBc ACPR at ±5 MHz offset. Use Value: Enables single-device solution for Band 3 macrocell coverage with 34.4% efficiency-reducing heatsink size by 35% versus prior-generation LDMOS. |
Use Scenario: Remote radio head (RRH) amplifier in indoor DAS deploying multiple synchronized carriers across 1805–1880 MHz. IC Role / Device Role / Timing Role: Linear RF power stage handling composite W-CDMA + LTE signals with 9.9 dB PAR and 75 MHz instantaneous bandwidth. Use Value: Maintains <0.4 dB gain flatness across full band-eliminating per-carrier calibration and reducing system-level predistortion complexity. |
| Active Antenna System (AAS) Module | Private LTE Network Base Station |
|
Use Scenario: Integrated active antenna unit with 8×8 MIMO requiring compact, thermally efficient PA per element. IC Role / Device Role / Timing Role: Final-stage LDMOS amplifier mounted directly to aluminum submount; leverages exposed source for low-thermal-resistance interface. Use Value: 0.23 °C/W RθJC allows direct die attach to heatsink-achieving 115°C case temperature at full 56 W load, within TC = –40 to +125°C rating. |
Use Scenario: Industrial-grade private LTE base station deployed in oilfield or mining environments with wide ambient temperature swings. IC Role / Device Role / Timing Role: Ruggedized RF power amplifier operating continuously at –30°C to +85°C with <0.011 dB/°C gain drift. Use Value: Stable 18.7 dB gain and –12 dB IRL across temperature - avoids recalibration during seasonal thermal cycling in uncontrolled enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CGHV1J006P | Gallium nitride HEMT; 6 W avg. Pout; 28 Vdc; 1805–2200 MHz bandwidth; 65% peak efficiency but lower ruggedness (6:1 VSWR max) | Better efficiency and wider bandwidth, but requires external input/output matching and higher gate drive complexity | Select when system prioritizes efficiency >60% and can accommodate GaN-specific gate bias sequencing and thermal management |
| A2T18S260W12NK | Same die, different packaging: OM-880X-2L2L with NiPdAu-plated leads instead of matte Sn; identical RF specs and thermal resistance | No functional difference; K-suffix indicates RoHS-compliant lead finish for selective soldering processes | Select A2T18S260W12NK only if lead-finish compatibility with wave-solder or selective-reflow process is required |
Compared with CGHV1J006P and A2T18S260W12NK, the A2T18S260W12NR3 provides plug-and-play broadband operation with no external matching, superior VSWR ruggedness (10:1 vs. 6:1), and proven thermal reliability in macrocell deployments-making it optimal for cost-sensitive, high-volume LTE infrastructure where design cycle time and field reliability are critical.
Availability
A2T18S260W12NR3 is available at Aetrix Electronics and suitable for cellular infrastructure, distributed antenna systems, and private LTE base stations requiring stable component supply, long lifecycle support, and traceable sourcing for production ramp.
Supply support for A2T18S260W12NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power from its Freescale acquisition.
The A2T18S260W12NR3 belongs to the AIRFAST RF Power LDMOS family, engineered specifically for energy-efficient, broadband cellular infrastructure amplifiers operating in licensed spectrum bands from 700 MHz to 3.8 GHz.
FAQ
What is the maximum continuous output power rating for A2T18S260W12NR3?
The A2T18S260W12NR3 is rated for 56 W average output power under W-CDMA conditions (28 Vdc, IDQ = 1500 mA, PAR = 9.9 dB). Its pulsed CW P1dB compression point reaches 280 W, and load-pull testing confirms 318 W maximum output at 1840 MHz with 53.2% efficiency-though sustained operation above 56 W avg. requires careful thermal derating per the 0.23 °C/W RθJC specification.
Does A2T18S260W12NR3 require external input/output matching networks?
No, the A2T18S260W12NR3 is internally matched on both input and output for 50 Ω systems across 1805–1880 MHz, as confirmed in Table 5 and Figure 7. This eliminates discrete matching components in standard test fixtures and simplifies layout-though system-level harmonic filtering and bias decoupling remain necessary per application requirements.
What is the gate threshold voltage range for A2T18S260W12NR3?
The gate threshold voltage (VGS(th)) for A2T18S260W12NR3 is specified as 1.4–2.2 Vdc at VDS = 10 Vdc and ID = 300 μAdc. This narrow range ensures consistent turn-on behavior across production lots and supports stable Class AB biasing at IDQ = 1500 mA with VGS(Q) = 2.1–2.9 Vdc.
How does A2T18S260W12NR3 handle load mismatch conditions?
The A2T18S260W12NR3 is qualified to survive 10:1 VSWR load mismatch at 32 Vdc and 295 W pulsed CW output power without degradation, as verified in Table 5's "Load Mismatch" section. This ruggedness stems from its LDMOS structure and optimized VBW pin configuration, enabling reliable operation in real-world antenna environments without external isolators.
What thermal management guidance applies to A2T18S260W12NR3?
A2T18S260W12NR3 requires direct thermal coupling between its exposed copper source pad (backside) and a heatsink using thermally conductive interface material. With RθJC = 0.23 °C/W, maintaining case temperature ≤81°C at 56 W avg. output ensures junction temperature stays ≤225°C. AN1907 details reflow soldering profiles for the OM-880X-2L2L package.
A2T18S260W12NR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-880X-2L2L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.805GHz ~ 1.88GHz
- Gain:
- 18.7dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 1.5 A
- Power - Output:
- 280W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- OM-880X-2L2L
A2T18S260W12NR3 FAQ
1.How can I place an order for A2T18S260W12NR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2T18S260W12NR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2T18S260W12NR3 reliable?
The price and inventory of A2T18S260W12NR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2T18S260W12NR3 is usually 5 days.
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4.How is shipping managed for A2T18S260W12NR3?
A2T18S260W12NR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2T18S260W12NR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2T18S260W12NR3?
For technical support, including A2T18S260W12NR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2T18S260W12NR3 requirements.
6.How does Aetrix verify that A2T18S260W12NR3 is sourced from the original manufacturer or authorized distributors?
All A2T18S260W12NR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2T18S260W12NR3 meets industry standards.
7.What is the process for return or replacement of A2T18S260W12NR3?
All A2T18S260W12NR3 units undergo pre-shipment inspection (PSI). If there is an issue with A2T18S260W12NR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2T18S260W12NR3 part is unused and in its original packaging.
Return procedure for A2T18S260W12NR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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