NXP Semiconductors A2T18S262W12NR3

Overview

A2T18S262W12NR3 from NXP Semiconductors is an RF power LDMOS transistor designed for cellular base station amplifiers operating in the 1805–1880 MHz band. It delivers 56 W average output power at 28 Vdc with 19.3 dB typical power gain and 33.1% drain efficiency under single-carrier W-CDMA conditions (PAR = 9.9 dB), optimized for Doherty PA architectures.

For engineers reviewing the A2T18S262W12NR3 datasheet, A2T18S262W12NR3 pinout, A2T18S262W12NR3 application, or A2T18S262W12NR3 equivalent, key selection criteria include broadband 75 MHz instantaneous bandwidth, high VSWR tolerance (10:1), thermal resistance of 0.23 °C/W, and gate-source voltage range of –6.0 to +10 Vdc for Class C operation.

Technical Context

This N-channel enhancement-mode lateral MOSFET operates with a fixed 28 Vdc drain supply and 1600 mA quiescent drain current. Its internal input/output matching enables direct integration into 50 Ω systems without external matching networks across the full 1805–1880 MHz band.

The device supports pulsed CW operation up to 388 W P1dB and exhibits –34.4 dBc adjacent channel power ratio at 56 W avg. output. Thermal design is enabled by its exposed-source OM-880X-2L2L plastic package and validated junction-to-case thermal resistance of 0.23 °C/W at 56 W CW.

Key Specifications

Pinout & Package

Package: OM-880X-2L2L - over-molded plastic package with exposed copper backside serving as the source terminal. Designed for surface-mount reflow assembly per J-STD-020 Level 3 (260 °C peak).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6V2150N and PD57018-E, the A2T18S262W12NR3 uniquely combines Band 3-specific optimization, internal broadband matching, dual-VBW drain feeds, and validated 10:1 VSWR survival-making it the preferred choice for thermally demanding, high-reliability macrocell final amplifiers.

Availability

A2T18S262W12NR3 is available at Aetrix Electronics and suitable for cellular infrastructure, macrocell base station amplifiers, and Doherty PA modules requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for A2T18S262W12NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with core expertise in RF power technologies.

The A2T18S262W12NR3 belongs to NXP's AIRFAST® RF Power LDMOS family, engineered specifically for high-efficiency, broadband, high-reliability cellular infrastructure amplifiers operating in licensed spectrum bands.

FAQ

What is the maximum continuous drain voltage rating for the A2T18S262W12NR3?

The A2T18S262W12NR3 has a maximum drain-source voltage rating (VDSS) of +65 Vdc and –0.5 Vdc. This rating defines the absolute limit for DC bias applied between drain and source terminals. Operation above +65 Vdc risks catastrophic failure, while negative excursions below –0.5 Vdc may cause gate oxide stress. The device is specified for 28 Vdc nominal operation in cellular base station applications.

Does the A2T18S262W12NR3 require external input/output matching networks?

No, the A2T18S262W12NR3 is internally matched for 50 Ω operation across its entire 1805–1880 MHz frequency band. This eliminates the need for external matching components in standard 50 Ω test fixtures and production amplifiers, simplifying layout and improving repeatability. Matching is verified per NXP's functional test conditions using a 50 Ω system.

What thermal derating applies to the A2T18S262W12NR3 at case temperatures above 72 °C?

The A2T18S262W12NR3's thermal resistance (RθJC) is specified at 0.23 °C/W under 56 W CW, 28 Vdc, and TC = 72 °C. At higher case temperatures, power must be reduced linearly per the junction temperature limit of +225 °C. For example, at TC = 100 °C, maximum allowable continuous power drops to approximately 43 W to maintain TJ ≤ 225 °C.

How is the exposed backside of the A2T18S262W12NR3 package electrically connected?

The exposed copper backside of the A2T18S262W12NR3's OM-880X-2L2L package is the source terminal of the LDMOS transistor. It must be soldered to a low-impedance, thermally conductive ground plane on the PCB to ensure both electrical performance and thermal dissipation. This connection serves as the primary current return path and thermal interface for the device.

What ESD protection level does the A2T18S262W12NR3 provide?

The A2T18S262W12NR3 is rated Class 2 per JESD22-A114 (Human Body Model) and Class C3 per JESD22-C101 (Charge Device Model). These ratings indicate moderate on-chip ESD protection-sufficient for standard handling in controlled environments but requiring proper grounding, ionization, and static-dissipative packaging during assembly and test.