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NXP Semiconductors A2T20H160W04NR3
- Part No.:
- A2T20H160W04NR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM780-4
- Datasheet:
-
A2T20H160W04NR3.pdf
- Description:
- RF MOSFET LDMOS 28V OM780-4
- Quantity:
- Payment:
- Shipping:
Inventory:9,442
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Product details
Overview
A2T20H160W04NR3 from NXP Semiconductors is a 28 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 1880–2025 MHz band. It delivers 17.0 dB typical power gain, 47.7% drain efficiency, and –33.5 dBc adjacent channel power ratio at 28 Vdc, 400 mA quiescent current, and 28 W average output under single-carrier W-CDMA conditions.
For engineers reviewing the A2T20H160W04NR3 datasheet, A2T20H160W04NR3 pinout, A2T20H160W04NR3 application, or A2T20H160W04NR3 equivalent, key selection criteria include its 1880–2025 MHz instantaneous bandwidth, internal input/output matching, 0.45 °C/W junction-to-case thermal resistance, and proven 10:1 VSWR ruggedness under broadband load mismatch.
Technical Context
This dual-gate LDMOS device integrates carrier and peaking transistors in a single OM-780-4L plastic over-molded package with exposed source paddle. Its asymmetrical Doherty architecture enables high efficiency across 145 MHz bandwidth while maintaining linearization compatibility with digital predistortion (DPD) systems.
The transistor operates with separate gate biasing: VGSA(Q) = 2.6 Vdc (typical) for the carrier side and VGSB = 0.2 Vdc fixed for the peaking side. It supports 28 Vdc operation with maximum VDSS of +65 Vdc and withstands 158 W CW output at 10:1 VSWR without degradation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1880–2025 MHz - full-band instantaneous coverage for LTE Band 1/3/34/39 base stations |
| Output Power (Avg) | 28 W - rated average RF output under W-CDMA signal with 9.9 dB PAR at 0.01% CCDF probability |
| Power Gain | 17.0 dB - typical small-signal to large-signal conversion efficiency enabling compact driver stage design |
| Drain Efficiency | 47.7% - measured at 1960 MHz, 28 W avg, enabling reduced thermal management burden |
| ACPR | –33.5 dBc - adjacent channel power ratio at ±5 MHz offset, meeting 3GPP spectral mask requirements |
| Thermal Resistance | 0.45 °C/W - junction-to-case value at 75°C case temperature, critical for heatsink sizing in macro-cell PA modules |
| VSWR Tolerance | 10:1 - validated survival at 32 Vdc and 158 W CW output, supporting antenna mismatch robustness |
Pinout & Package
Package: OM-780-4L - over-molded plastic package with exposed copper backside serving as common source terminal. Dimensions per NXP drawing; RoHS-compliant, MSL Level 3 (260°C peak reflow).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | RFoutA / VDSA | Carrier amplifier drain output - RF port for main amplification path; DC-coupled, requires external DC blocking |
| 2 | RFoutB / VDSB | Peaking amplifier drain output - RF port for auxiliary amplification path; DC-coupled, shares VDD with Pin 1 |
| 3 | RFinA / VGSA | Carrier gate input - bias and RF input node for carrier transistor; internally matched to 50 Ω |
| 4 | RFinB / VGSB | Peaking gate input - bias and RF input node for peaking transistor; fixed 0.2 Vdc bias point for Class C operation |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty Architecture | Optimized carrier-to-peaking power ratio enables >45% efficiency at 6–8 dB back-off, critical for LTE PAPR signals |
| Internal Input/Output Matching | Eliminates need for external matching networks at both ports, reducing PCB area and insertion loss in front-end modules |
| Enhanced Gate Voltage Range | VGS rating of –6.0 to +10 Vdc allows stable Class C peaking operation and improved linearity headroom |
| Digital Predistortion Ready | Low AM/PM distortion (–9.1° max) and flat gain response (0.5 dB variation over 145 MHz) support high-fidelity DPD convergence |
| High Ruggedness | Validated 10:1 VSWR survivability at full-rated power ensures field reliability in real-world antenna deployments |
Applications
| Macro-Cell Base Station Transceivers | Active Antenna Systems (AAS) |
|---|---|
|
Use Scenario: High-power RF final stage in 4T4R LTE FDD base station radios covering Band 1 (1920–1980 MHz) and Band 3 (1710–1785 MHz). IC Role / Device Role / Timing Role: Dual-path Doherty power amplifier transistor delivering 28 W avg. output with DPD linearization. Use Value: Enables 47.7% drain efficiency at 28 W avg., reducing system power consumption and thermal load in outdoor cabinets. |
Use Scenario: Integrated PA module in 32T32R massive MIMO active antenna units requiring wide instantaneous bandwidth. IC Role / Device Role / Timing Role: Asymmetrical Doherty RF transistor supporting 1880–2025 MHz continuous coverage without band switching. Use Value: 145 MHz gain flatness (0.5 dB) and broadband VSWR tolerance simplify beamforming calibration across frequency bands. |
| Remote Radio Heads (RRH) | Small-Cell Outdoor Repeaters |
|
Use Scenario: Compact remote radio head deployed on cell towers with strict size and thermal constraints. IC Role / Device Role / Timing Role: High-efficiency RF power transistor operating at 28 Vdc with 0.45 °C/W thermal resistance. Use Value: Low thermal resistance enables direct-mount heatsinking onto aluminum chassis, eliminating need for thermal interface materials. |
Use Scenario: Outdoor repeater unit amplifying uplink signals in rural coverage extension deployments. IC Role / Device Role / Timing Role: Ruggedized Doherty transistor handling variable antenna VSWR in uncontrolled RF environments. Use Value: Proven 10:1 VSWR survivability at 158 W CW prevents failure during lightning-induced impedance transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6V2150N | Single-ended LDMOS (not Doherty); 150 W P3dB; narrower 1805–2200 MHz bandwidth; higher VDD = 32 V | Suitable for traditional Class AB macro-cell PAs where DPD complexity is avoided | Select when system-level efficiency targets allow <40% drain efficiency and board space permits larger matching networks |
| AFM905S | GaN HEMT technology; 500 W P3dB; 1805–2200 MHz; higher gain (18.5 dB); no internal matching | Targeted at next-gen mMIMO active arrays requiring higher power density and bandwidth scalability | Select when thermal budget allows higher junction temperatures and external matching is acceptable for performance tuning |
Compared with MRF6V2150N and AFM905S, the A2T20H160W04NR3 offers integrated Doherty architecture and internal matching-reducing component count and layout complexity-while delivering optimal trade-offs between efficiency, ruggedness, and ease of integration in LTE-Advanced macro-cell designs.
Availability
A2T20H160W04NR3 is available at Aetrix Electronics and suitable for macro-cell base stations, active antenna systems, remote radio heads, and outdoor repeaters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for A2T20H160W04NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies.
The A2T20H160W04NR3 belongs to NXP's AIRFAST RF Power LDMOS family, engineered specifically for energy-efficient, digitally predistorted cellular infrastructure amplifiers operating in licensed sub-3 GHz spectrum.
FAQ
What is the recommended gate bias configuration for A2T20H160W04NR3 in Doherty operation?
The A2T20H160W04NR3 requires asymmetric gate biasing: VGSA(Q) = 2.6 Vdc (typical) for the carrier transistor (Pin 3), and VGSB = 0.2 Vdc (fixed) for the peaking transistor (Pin 4). This configuration enables optimal Doherty load modulation and efficiency enhancement across the 1880–2025 MHz band. The A2T20H160W04NR3 datasheet specifies these values under functional test conditions at 28 Vdc and 400 mA IDQA.
Does A2T20H160W04NR3 require external input/output matching networks?
No, the A2T20H160W04NR3 is internally matched on both input and output sides to 50 Ω, as confirmed in Table 6 footnote 2 of the official NXP datasheet. This eliminates discrete matching components for standard 50 Ω system interfaces, simplifying PCB layout and improving repeatability in high-volume manufacturing of the A2T20H160W04NR3-based amplifiers.
What is the maximum safe operating junction temperature for A2T20H160W04NR3?
The A2T20H160W04NR3 has an operating junction temperature range of –40 to +225 °C, per Table 1 of the NXP datasheet. For reliable long-term operation, NXP recommends maintaining TJ ≤ 200 °C under continuous W-CDMA signal conditions. Thermal design must account for the specified 0.45 °C/W junction-to-case resistance and ensure adequate heatsinking to keep the A2T20H160W04NR3 within this limit.
How does A2T20H160W04NR3 perform under broadband load mismatch conditions?
The A2T20H160W04NR3 is validated to survive 10:1 VSWR at 32 Vdc and 158 W CW output power without degradation, as stated in Table 5 functional test notes. This ruggedness applies across the 1880–2025 MHz band and makes the A2T20H160W04NR3 suitable for base station applications where antenna impedance varies dynamically due to environmental factors or mechanical tilt adjustments.
Is A2T20H160W04NR3 compatible with digital predistortion (DPD) linearization?
Yes, the A2T20H160W04NR3 is explicitly designed for DPD systems, with features including low AM/PM distortion (–9.1° max), flat gain response (0.5 dB variation over 145 MHz), and stable ACPR performance (–33.5 dBc typical). These characteristics enable fast DPD coefficient convergence and sustained linearity in deployed LTE-Advanced base stations using the A2T20H160W04NR3.
A2T20H160W04NR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM780-4
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 1.88GHz ~ 2.025GHz
- Gain:
- 17dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 400 mA
- Power - Output:
- 200W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- OM780-4
A2T20H160W04NR3 FAQ
1.How can I place an order for A2T20H160W04NR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2T20H160W04NR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2T20H160W04NR3 reliable?
The price and inventory of A2T20H160W04NR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2T20H160W04NR3 is usually 5 days.
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4.How is shipping managed for A2T20H160W04NR3?
A2T20H160W04NR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2T20H160W04NR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2T20H160W04NR3?
For technical support, including A2T20H160W04NR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2T20H160W04NR3 requirements.
6.How does Aetrix verify that A2T20H160W04NR3 is sourced from the original manufacturer or authorized distributors?
All A2T20H160W04NR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2T20H160W04NR3 meets industry standards.
7.What is the process for return or replacement of A2T20H160W04NR3?
All A2T20H160W04NR3 units undergo pre-shipment inspection (PSI). If there is an issue with A2T20H160W04NR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2T20H160W04NR3 part is unused and in its original packaging.
Return procedure for A2T20H160W04NR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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