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NXP Semiconductors A2T20H330W24NR6
- Part No.:
- A2T20H330W24NR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-1230-4L2L
- Datasheet:
-
A2T20H330W24NR6.pdf
- Description:
- RF MOSFET LDMOS 28V OM1230-42
- Quantity:
- Payment:
- Shipping:
Inventory:8,930
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Product details
Overview
A2T20H330W24NR6 from NXP Semiconductors is a 55 W average, asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 1880–2025 MHz band. It features dual-gate architecture (carrier and peaking sides), 28 Vdc operation, and delivers 16.3 dB typical power gain with 50.3% drain efficiency at 1960 MHz under W-CDMA conditions.
For engineers reviewing the A2T20H330W24NR6 datasheet, A2T20H330W24NR6 pinout, A2T20H330W24NR6 application, or A2T20H330W24NR6 equivalent, this device is selected for high-efficiency, wide-bandwidth macrocell and massive MIMO PA stages requiring digital predistortion compatibility, robust load mismatch tolerance (VSWR 5:1), and thermal stability up to +125°C case temperature.
Technical Context
The A2T20H330W24NR6 integrates two laterally diffused MOSFETs-Carrier (Side A) and Peaking (Side B)-in a single OM-1230-4L2L over-molded plastic package. Its asymmetrical Doherty topology enables wide instantaneous bandwidth (145 MHz) with <0.8 dB gain flatness at 55 W avg., while internal input/output matching simplifies PCB layout.
It operates with independent gate biasing: VGSA(Q) = 2.6 Vdc (typ.) for carrier side at IDQA = 700 mA, and VGSB = 0.1 Vdc (typ.) for peaking side under W-CDMA drive. The exposed backside source terminal provides low-inductance thermal path, supported by RθJC = 0.26 °C/W at 55 W avg. output.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1880–2025 MHz - Covers full LTE Band 1 (2100 MHz), Band 3 (1800 MHz), and TDD-LTE 2.3 GHz edge; supports multi-band macro base stations. |
| Average Output Power | 55 W - Sustained W-CDMA single-carrier output at PAR = 9.9 dB @ 0.01% CCDF probability; enables high spectral efficiency in dense urban deployments. |
| Power Gain (Gps) | 16.3 dB typ. @ 1960 MHz - Enables reduced driver stage complexity; measured with 50 Ω system, functional test fixture, 28 Vdc supply. |
| Drain Efficiency (ηD) | 50.3% typ. @ 1960 MHz - Reduces thermal load and DC power consumption in 24/7 base station operation; validated under real-world signal statistics. |
| ACPR | –32.1 dBc @ ±5 MHz offset - Meets 3GPP ACLR requirements for adjacent channel leakage suppression without excessive DPD overhead. |
| Thermal Resistance (RθJC) | 0.26 °C/W - Confirmed at 76°C case temp, 55 W avg., W-CDMA, enabling compact heatsink designs for outdoor remote radio units (RRUs). |
| VSWR Tolerance | 5:1 @ 28 Vdc, 191 W pulsed CW - Survives antenna mismatch events without degradation; critical for active antenna systems with integrated beamforming. |
Pinout & Package
Package: OM-1230-4L2L - Over-molded plastic, thermally enhanced, 6-pin surface-mount package with exposed copper backside (source terminal). Dimensions per NXP drawing OM-1230-4L2L; RoHS-compliant, MSL Level 3 (260°C peak reflow).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | RFinA / VGSA | Carrier-side RF input and gate bias node; DC-coupled, requires external bias network for VGSA(Q) ≈ 2.6 Vdc. |
| 2 | VBWA | Carrier-side bias voltage adjustment terminal; used for fine-tuning quiescent current in production calibration. |
| 3 | RFoutA / VDSA | Carrier-side RF output and drain supply node; must be tied to VDDA and shared with VDDB (pin 6) per datasheet requirement. |
| 4 | RFoutB / VDSB | Peaking-side RF output and drain supply node; DC-coupled and RF-independent from pin 3; shares VDD rail via external tie. |
| 5 | RFinB / VGSB | Peaking-side RF input and gate bias node; biased at 0.1 Vdc for Class C operation; enables precise Doherty timing alignment. |
| 6 | VBWB | Peaking-side bias voltage adjustment terminal; used to set VGSB during functional test and system tuning. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty Architecture | Enables >145 MHz instantaneous bandwidth at 55 W avg. with <0.8 dB gain flatness-critical for carrier aggregation and wideband TDD-LTE. |
| Digital Predistortion (DPD) Compatibility | Validated with IQ magnitude clipping and 9.9 dB PAR input; AM/PM distortion ≤ –13° across band ensures linearization convergence in real-time DPD loops. |
| Extended Negative VGS Range | –6.0 Vdc gate-source rating allows deep Class C peaking operation (VGSB = 0.1 Vdc), improving efficiency compression behavior under high-PAR signals. |
| Integrated Input/Output Matching | Eliminates external matching networks at both ports-reduces bill-of-materials, layout area, and assembly cost in multilayer RRU PCBs. |
| Robust Load Mismatch Handling | No degradation at 5:1 VSWR, 191 W pulsed CW-ensures field reliability in variable antenna impedance environments including MIMO and beamformed arrays. |
Applications
| Macrocell Base Station Transmitter | Massive MIMO Active Antenna Unit |
|---|---|
Use Scenario: High-power final-stage amplifier in 4T4R or 8T8R LTE eNodeB supporting 20 MHz channels across Band 1 and Band 3. IC Role / Device Role / Timing Role: Dual-path Doherty PA core delivering 55 W avg. output with synchronized carrier/peaking timing; handles dynamic PAPR up to 9.9 dB. Use Value: Achieves 50.3% drain efficiency at 1960 MHz, reducing cooling requirements and AC power draw by ~18% versus legacy Class AB solutions. |
Use Scenario: Per-element PA in 64T64R massive MIMO array operating in 1880–2025 MHz range with beamforming and spatial multiplexing. IC Role / Device Role / Timing Role: Compact, thermally efficient PA die enabling high-density integration; exposed source enables direct thermal interface to aluminum heatsink. Use Value: 0.26 °C/W RθJC allows sustained 55 W avg. operation at TC = +125°C-enabling fanless outdoor deployment in harsh climates. |
| 5G NR Sub-6 GHz Mid-Band PA | Wideband TDD-LTE Infrastructure |
Use Scenario: Final-stage PA in 5G NR base stations targeting n1/n3/n41 bands with 100 MHz channel bandwidth and 8-layer OFDMA. IC Role / Device Role / Timing Role: Asymmetrical Doherty transistor optimized for wide instantaneous bandwidth; supports 145 MHz flat gain response at 55 W avg. Use Value: 0.8 dB gain flatness and –32.1 dBc ACPR meet 3GPP TS 38.104 spectral mask requirements without additional filtering or DPD iteration overhead. |
Use Scenario: High-efficiency transmitter in TDD-LTE infrastructure covering 1880–1920 MHz and 2010–2025 MHz segments with time-division duplexing. IC Role / Device Role / Timing Role: Dual-gate LDMOS enabling fast turn-on/turn-off switching between uplink/downlink slots; VBWA/VBWB pins support dynamic bias control. Use Value: Greater negative VGS range (–6.0 Vdc) allows stable Class C peaking operation during short-duration downlink bursts, improving slot-to-slot efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6VP2600HR6 | 600 W P3dB, 2.6–2.7 GHz band, higher voltage (50 V), larger OM-1230-4L2L variant; no integrated Doherty architecture. | Targeted at high-power point-to-point microwave links-not optimized for wideband cellular PAR handling or DPD linearity. | Select only for narrowband, high-P3dB applications outside 1880–2025 MHz; requires full external matching and separate carrier/peaking bias design. |
| A2T20H330W24GNR6 | Same die, identical electrical specs, but in green (halogen-free) OM-1230-4L2L package; RoHS-compliant with alternate molding compound. | No functional difference; used where halogen-free compliance is mandated by OEM environmental policy or regional regulation (e.g., China RoHS II). | Drop-in replacement for A2T20H330W24NR6 when green material specification is required; same pinout, thermal, and RF performance. |
Compared with MRF6VP2600HR6, A2T20H330W24NR6 offers superior wideband Doherty efficiency and integrated matching for cellular infrastructure, while A2T20H330W24GNR6 provides identical RF performance with halogen-free packaging-making it the preferred choice for environmentally regulated deployments without design change.
Availability
A2T20H330W24NR6 is available at Aetrix Electronics and suitable for macrocell base stations, massive MIMO active antenna units, and 5G NR sub-6 GHz infrastructure requiring stable component supply, long-lifecycle assurance, and traceable sourcing for telecom equipment manufacturing.
Supply support for A2T20H330W24NR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with >50 years of RF power expertise and leadership in cellular infrastructure silicon.
The A2T20H330W24NR6 belongs to NXP's AIRFAST RF Power LDMOS family, engineered specifically for energy-efficient, wideband, digitally predistorted cellular base station power amplifiers operating from 700 MHz to 3.8 GHz.
FAQ
What is the maximum continuous drain voltage rating for A2T20H330W24NR6?
The A2T20H330W24NR6 has a maximum drain-source voltage (VDSS) rating of +65 Vdc and –0.5 Vdc. This rating applies to both carrier and peaking sides under static conditions. Operation above 32 Vdc on VDD is not permitted per Table 1 Maximum Ratings; the device is specified for 28 Vdc nominal operation in Doherty configurations.
Does A2T20H330W24NR6 require external input/output matching networks?
No. The A2T20H330W24NR6 is internally matched on both input and output ports for 50 Ω systems across 1880–2025 MHz, as confirmed in Table 6 notes and functional test data. External matching is unnecessary in standard Doherty reference designs, though harmonic filtering may still be required per system EMI requirements.
What is the thermal resistance junction-to-case (RθJC) value for A2T20H330W24NR6?
The A2T20H330W24NR6 has a measured RθJC of 0.26 °C/W under defined test conditions: case temperature 76°C, 55 W average output, W-CDMA signal, 28 Vdc supply, IDQA = 700 mA, VGSB = 0.1 Vdc, f = 1960 MHz. This value is validated per AN1955 methodology and enables accurate thermal modeling for heatsink selection.
Can A2T20H330W24NR6 operate with separate VDD supplies for carrier and peaking paths?
No. Per Table 6 Note 1 and Figure 2 schematic, VDDA (pin 3) and VDDB (pin 6) must be tied together and powered by a single DC supply. Supplying current separately through pins 3 and 6 is prohibited, as stated explicitly in Figure 1 note: "Device cannot operate with VDD current supplied through pin 3 and pin 6."
What ESD protection level does A2T20H330W24NR6 provide?
The A2T20H330W24NR6 meets HBM Class 2 (±2 kV), MM Class B (±200 V), and CDM Level IV per JESD22-A114/A115/C101. These ratings are verified during wafer sort and final test; no external ESD protection diodes are required on gate lines in properly designed PCB layouts with controlled impedance and grounding.
A2T20H330W24NR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-1230-4L2L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.88GHz ~ 2.025GHz
- Gain:
- 15.9dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 700 mA
- Power - Output:
- 229W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- OM-1230-4L2L
A2T20H330W24NR6 FAQ
1.How can I place an order for A2T20H330W24NR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2T20H330W24NR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2T20H330W24NR6 reliable?
The price and inventory of A2T20H330W24NR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2T20H330W24NR6 is usually 5 days.
3.What payment methods are accepted for A2T20H330W24NR6?
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A2T20H330W24NR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2T20H330W24NR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2T20H330W24NR6?
For technical support, including A2T20H330W24NR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2T20H330W24NR6 requirements.
6.How does Aetrix verify that A2T20H330W24NR6 is sourced from the original manufacturer or authorized distributors?
All A2T20H330W24NR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2T20H330W24NR6 meets industry standards.
7.What is the process for return or replacement of A2T20H330W24NR6?
All A2T20H330W24NR6 units undergo pre-shipment inspection (PSI). If there is an issue with A2T20H330W24NR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2T20H330W24NR6 part is unused and in its original packaging.
Return procedure for A2T20H330W24NR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
A2T20H330W24NR6 Tags
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