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NXP Semiconductors A2T21H100-25SR3
- Part No.:
- A2T21H100-25SR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
A2T21H100-25SR3.pdf
- Description:
- RF MOSFET LDMOS
- Quantity:
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Inventory:9,922
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Product details
Overview
A2T21H100-25SR3 from NXP Semiconductors is an asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating at 2110–2170 MHz. It delivers 18 W average output power at 28 Vdc with 52.1% drain efficiency, 17.3 dB power gain, and –32.4 dBc ACPR under single-carrier W-CDMA conditions (PAR = 9.9 dB), targeting macro/micro-cell PA stages.
For engineers reviewing the A2T21H100-25SR3 datasheet, A2T21H100-25SR3 pinout, A2T21H100-25SR3 application, or A2T21H100-25SR3 equivalent, this page provides verified electrical specs, thermal resistance (0.76 °C/W), gate threshold voltage (0.8–1.6 V), load-pull contours, and Doherty-side-specific tuning data for digital predistortion systems.
Technical Context
This device integrates two independent LDMOS transistors-Carrier (Side A) and Peaking (Side B)-in a single NI-780S-4L4S package. Side A operates with IDQA = 250 mA quiescent current and VGSA(Q) = 1.5–2.3 Vdc; Side B is biased at VGSB = 0.2 Vdc for Class C operation, enabling high-efficiency asymmetrical Doherty behavior across 2110–2170 MHz.
It features internal input/output matching, supports digital predistortion via low AM/PM distortion (–21.9° max), and maintains stable performance over temperature (ΔG = 0.01 dB/°C). The VBWA/VBWB pins enable independent bias control, while N.C. terminals isolate unused paths per layout constraints.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2110–2170 MHz - Full-band operation for Band I LTE/FDD infrastructure. |
| Avg. Output Power | 18 W - Sustained linear output under W-CDMA signal with 9.9 dB PAR. |
| Drain Efficiency | 52.1% @ 2110 MHz - Enables reduced thermal load and cooling cost in densely packed PA modules. |
| Power Gain | 17.4 dB @ 2140 MHz - Delivers sufficient small-signal gain to minimize driver stage complexity. |
| ACPR | –35.0 dBc @ 2170 MHz - Meets 3GPP spectral mask requirements for adjacent channel leakage. |
| Thermal Resistance | 0.76 °C/W - Confirmed at TC = 72°C, 18 W avg., enabling accurate junction temperature estimation. |
| VGS(th) | 0.8–1.6 Vdc - Tight threshold spread ensures consistent turn-on behavior across production lots. |
Pinout & Package
Package: NI-780S-4L4S - Flanged ceramic/metal overmolded package with integrated thermal slug, optimized for RF grounding and heatsink attachment. Pin 6 and 7 feature manufacturing reference holes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (RFoutA/VDSA) | Carrier Drain Output | Main RF output node for carrier amplifier path; connects to output matching network. |
| 2 (RFinA/VGSA) | Carrier Gate Input | Bias and RF input for carrier transistor; requires DC blocking and impedance matching. |
| 3 (VBWA(1)) | Carrier Bias Control | Independent gate bias supply pin for carrier side; not for VDD current sourcing. |
| 4 (RFoutB/VDSB) | Peaking Drain Output | RF output node for peaking amplifier path; phase-aligned with carrier for Doherty combiner. |
| 5 (RFinB/VGSB) | Peaking Gate Input | RF and bias input for peaking transistor; biased at 0.2 Vdc for Class C operation. |
| 6 (VBWB(1)) | Peaking Bias Control | Independent gate bias supply for peaking side; enables precise threshold tuning. |
| 7, 8 (N.C.) | No Connect | Unused terminals; must remain unconnected per design rules to avoid parasitic coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty Architecture | Enables >50% drain efficiency at backed-off PAPR without sacrificing linearity-critical for energy-efficient 4G/5G base stations. |
| Negative VGS Range | –6.0 Vdc capability allows deep Class C peaking bias, improving efficiency foldback and peak power headroom. |
| Digital Predistortion Ready | Low AM/PM distortion (–21.9° max) and flat gain variation (0.01 dB/°C) simplify DPD algorithm convergence and stability. |
| Integrated Input/Output Matching | Reduces external component count and layout sensitivity-enables compact PA designs with repeatable broadband performance. |
| Robust ESD Protection | HBM Class 2 (2 kV), MM Class B, CDM Class III rating ensures handling safety and board-level reliability during assembly. |
Applications
| Macro-Cell Base Station PA | Micro-Cell Small Cell PA |
|---|---|
Use Scenario: High-power remote radio head (RRH) transmitting LTE Band I signals in urban macro-cell deployments. IC Role / Device Role / Timing Role: Asymmetrical Doherty final-stage power amplifier delivering 18 W avg. output into 50 Ω load with digital predistortion correction. Use Value: Achieves 52.1% drain efficiency at 2110 MHz, reducing system power consumption and thermal management burden in outdoor cabinets. | Use Scenario: Indoor distributed antenna system (DAS) node covering enterprise buildings with multi-user MIMO support. IC Role / Device Role / Timing Role: Compact, thermally efficient PA core enabling dual-stream W-CDMA transmission within tight form factor constraints. Use Value: 0.76 °C/W thermal resistance and 17.4 dB gain allow direct heatsink mounting without forced air, lowering bill-of-materials cost. |
| Active Antenna System (AAS) Module | 5G NR Sub-6 GHz PA Stage |
Use Scenario: Integrated active antenna unit with beamforming capability requiring high linearity and efficiency across 2110–2170 MHz. IC Role / Device Role / Timing Role: Final-stage Doherty PA supporting envelope tracking and DPD for dynamic signal envelope shaping. Use Value: –35.0 dBc ACPR at 2170 MHz meets stringent ACLR requirements for co-located 4G/5G bands without additional filtering. | Use Scenario: Early-deployment 5G NR base station operating in n1 band (2100 MHz) with backward-compatible LTE support. IC Role / Device Role / Timing Role: Dual-mode PA core delivering 18 W avg. output for both OFDMA and SC-FDMA waveforms. Use Value: Identical carrier/peaking load-pull contours across 2110–2170 MHz ensure consistent tuning across 5G NR channel bandwidths up to 100 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| A2T21H100-25SR2 | Same die, R2 suffix = 100-unit tape-and-reel; identical electrical specs and pinout. | No functional difference; used for lower-volume prototyping or qualification builds. | Select A2T21H100-25SR2 when smaller reel quantities align with pilot production needs. |
| MRF6VP2150HR6 | Higher P1dB (150 W), wider bandwidth (1805–2200 MHz), but no integrated Doherty architecture or VBW pins. | Requires external Doherty combiner and separate bias networks; higher thermal mass (RθJC = 0.95 °C/W). | Choose MRF6VP2150HR6 only if >100 W CW output is required and discrete Doherty implementation is acceptable. |
Compared with A2T21H100-25SR2, the R3 variant offers better logistics scalability; versus MRF6VP2150HR6, A2T21H100-25SR3 reduces PCB area by 35%, eliminates external combiner loss, and simplifies bias sequencing for DPD-ready systems.
Availability
A2T21H100-25SR3 is available at Aetrix Electronics and suitable for cellular infrastructure, active antenna systems, and 5G sub-6 GHz base station designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for A2T21H100-25SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with headquarters in Eindhoven, Netherlands.
The A2T21H100-25SR3 belongs to NXP's AIRFAST RF Power portfolio, engineered specifically for energy-efficient, digitally predistorted cellular base station power amplifiers operating in licensed spectrum bands.
FAQ
What is the maximum continuous drain voltage rating for the A2T21H100-25SR3?
The A2T21H100-25SR3 has a maximum drain-source voltage rating of +65 Vdc, with a minimum of –0.5 Vdc. This rating applies to both Carrier (Side A) and Peaking (Side B) transistors and is validated under pulsed CW test conditions per Table 1. Exceeding +65 Vdc risks permanent device degradation.
Does the A2T21H100-25SR3 require external input/output matching networks?
No-the A2T21H100-25SR3 is internally matched on both input and output for 50 Ω systems across 2110–2170 MHz, as confirmed in the datasheet's "Part internally matched both on input and output" note. External matching is only needed for fine-tuning specific load-pull contours or harmonic suppression.
Can the A2T21H100-25SR3 operate in symmetrical Doherty mode?
No-the A2T21H100-25SR3 is characterized and optimized exclusively for asymmetrical Doherty operation, with distinct bias points (IDQA = 250 mA, VGSB = 0.2 Vdc) and load-pull contours for Carrier and Peaking sides. Symmetrical operation is neither specified nor supported in the datasheet.
What is the thermal resistance junction-to-case for the A2T21H100-25SR3 under typical operating conditions?
The thermal resistance junction-to-case (RθJC) for the A2T21H100-25SR3 is 0.76 °C/W, measured at case temperature TC = 72°C, 18 W average output power, 28 Vdc supply, and 2140 MHz frequency per Table 2. This value is critical for calculating maximum allowable ambient temperature in sealed enclosures.
How does the A2T21H100-25SR3 support digital predistortion (DPD) systems?
The A2T21H100-25SR3 supports DPD through low AM/PM distortion (–21.9° max), stable gain flatness (0.17 dB over 60 MHz), and minimal temperature drift (ΔG = 0.01 dB/°C). Its integrated Doherty architecture also reduces memory effects, accelerating DPD model convergence in real-time adaptive systems using the A2T21H100-25SR3.
A2T21H100-25SR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
A2T21H100-25SR3 FAQ
1.How can I place an order for A2T21H100-25SR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2T21H100-25SR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2T21H100-25SR3 reliable?
The price and inventory of A2T21H100-25SR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2T21H100-25SR3 is usually 5 days.
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Once your A2T21H100-25SR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2T21H100-25SR3?
For technical support, including A2T21H100-25SR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2T21H100-25SR3 requirements.
6.How does Aetrix verify that A2T21H100-25SR3 is sourced from the original manufacturer or authorized distributors?
All A2T21H100-25SR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2T21H100-25SR3 meets industry standards.
7.What is the process for return or replacement of A2T21H100-25SR3?
All A2T21H100-25SR3 units undergo pre-shipment inspection (PSI). If there is an issue with A2T21H100-25SR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2T21H100-25SR3 part is unused and in its original packaging.
Return procedure for A2T21H100-25SR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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